Tokyo Electron Limited

Kenji Ouchi

Masato Morishima

Yumiko Kawano

Maju Tomura

Hiroki Murakami

Takashi Matsumoto

Masahito Sugiura

Shuji Azumo

Ryutaro Suda

Munehito Kagaya

Shinichi Ike

Kae Kumagai

Kazuki Yamada

Taiki Katou

Shuichiro Sakai

The present disclosure provides a technique capable of controlling a shape of an SAM. Provided is a method of forming a target film on a substrate, wherein the method includes preparing a substrate including a layer of a first conductive material formed on a surface of a first region, and a layer of an insulating material formed on a surface of a second region; forming carbon nanotubes on a surface of the layer of the first conductive material; and supplying a raw material gas for a self-assembled film to form the self-assembled film in a region of the surface of the layer of the first conductive material in which the carbon nanotubes have not been formed.

Film-forming method

A substrate processing method includes: (a) carrying a substrate having a first film with a recess, and a mask into a first chamber; (b) adjusting the substrate temperature to 200° C. or higher; (c-1) supplying silicon-containing reactive species into the first chamber, thereby adsorbing the species onto the side wall of the recess; and (c-2) supplying nitrogen-containing reactive species into the first chamber, thereby forming a second film on the side wall of the recess; (d) carrying the substrate into a second chamber; and (e) adjusting the substrate temperature to 100° C. or lower; and (f) etching the bottom of the recess. Further, (a) to (f) are repeated in this order until an aspect ratio of a depth dimension from the opening of the mask to the bottom of the recess becomes 50 or more.

Substrate processing method and substrate processing system

In one embodiment that provides a technology in which process complication is suppressed and selective pattern film formation is performed, a method MT for processing a wafer W is provided, the wafer W includes a metal portion, an insulating portion, and a main surface, and a surfaceof the metal portionand a surfaceof the insulating portionare exposed on the main surfaceside, the method MT includes: a step Sof accommodating the wafer W in a processing chamberof a plasma processing apparatus; a step Sof starting supplying Ogas into the processing chamber; and a step Sof generating a plasma in the processing chamberby the gas in the processing chambercontaining a SiFgas by supplying the SiFgas and plasma generation high-frequency power into the processing chamber, the plasma generated in the step Scontains deposition species and etching species, and, in the plasma generated in the step S, a proportion occupied by the etching species is greater than a proportion occupied by the deposition species.

Method for processing workpiece

In one embodiment in which a technology which is capable of reducing voids that can occur when burying an insulating film into a trench while suppressing process complication, a method MT for processing a wafer W is provided. The wafer W has a grooveformed on the main surfaceof the wafer W. The method MT includes: step Sof accommodating the wafer W in a processing chamberof a plasma processing apparatus; step Sof starting supplying a first gas into the processing chamber; step Sof starting supplying plasma generation high-frequency power into the processing chamber; and step Sof starting intermittent supplying a second gas into the processing chamberand starting supplying a third gas into the processing chambertogether, the first gas is a nitrogen-containing gas, the second gas is a gas that does not contain halogen, and the third gas is a gas that contains halogen.

An etching method for a target object. The target object includes a main surface, grooves formed in the main surface, and an etching target film covering the main surface and surfaces of the grooves. The method includes supplying a first gas into a processing chamber, and supplying a second gas and a high frequency power to generate a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. The etching target film is made of a material that is dry etched by using fluorine, and portions of the etching target film covering the surfaces of the grooves are selectively removed.

Etching method

A film forming method for a target object including a main surface and grooves formed in the main surface, includes a step of supplying of a first gas into the processing chamber, and a step of supplying a second gas and a high frequency power for plasma generation into the processing chamber to generate in the processing chamber a plasma of a gas including the second gas in the processing chamber. The first gas contains an oxidizing agent that does not include a hydrogen atom. The second gas contains a compound that includes one or more silicon atoms and one or more fluorine atoms and does not include a hydrogen atom. A film containing silicon and oxygen is selectively formed on the main surface of the target object except the grooves.

Film forming method

There is provided a method of forming a sealing film to seal a device formed on a substrate, including: supplying a mixture gas including a silicon-containing gas and a halogen element-containing gas or a mixture gas including a silicon-containing gas and a gas containing a functional group having an electronegative property stronger than that of nitrogen, as a first mixture gas, into a processing container; generating plasma of the first mixture gas within the processing container; and forming a first sealing film to cover the device using the first mixture gas activated by the plasma.

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Nirasaki, Japan

Kenji Ouchi