Japan Pionics Co., Ltd.

Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Sumitomo Electric Industries, Limited

Japan Pionics., Ltd.

Kenji Otsuka

Satoshi Arakawa

Hongyong Zhang

Youji Nawa

Shunpei Yamazaki

Yoshiharu Hirakata

Hideaki Kuwabara

Satoshi Teramoto

Takashi Shimada

Hideki Fukuda

Tomohisa Ikeda

Toshiya Hatakeyama

Yasusada Miyano

Naoki Muranaga

Ryuji Hasemi

Yutaka Amijima

Minoru Osugi

Kei Kawaguchi

Mitsuo Okumura

Tetsuro Miyazaki

Jo Wada

Tetsuro Nakata

Yukichi Takamatsu

Koichi Kitahara

Noboru Akita

Kikurou Takemoto

Naomi Egashira

Noboru Takemasa

Kazuaki Tonari

Koshi Ochi

Hiroshi Waki

Yoshio Yamashita

Satoshi Arawaka

Takashi Kasaya

Suehachi Teru

Norihiro Suzuki

There is provided an image processing device including a first housing, a second housing, a first display device, a second display device, a video input terminal, a video output terminal, a storage unit, a video combining unit, a configuration control unit, a first GUI control unit, a second GUI control unit.

Image processing device and GUI configuration command method for image processing device

In a liquid crystal display device, gate lines and common lines are first concurrently formed, and after an interlayer film is formed, a pixel electrode, common electrodes, and source lines are formed at the same time. By this, a electrode pattern can be made simple and manufacturing steps are simplified. Further, wiring lines and electrode disposed in the layer closest to a liquid crystal layer are made the pixel electrode, common electrodes and source lines, and the shapes thereof are made simple.

Electro-optical device and method of manufacturing the same

The invention provides a method of recovering a copper component or a manganese component from a cleaning agent containing copper oxide, a cleaning agent containing basic copper carbonate, a cleaning agent containing copper hydroxide, or a cleaning agent containing copper oxide and manganese oxide, the cleaning agents having been used for removing, through contact with a harmful gas, a phosphine contained as a harmful component in the harmful gas. Also, the invention provides a method of recovering a copper component or a manganese component from a cleaning agent containing basic copper carbonate, a cleaning agent containing copper hydroxide, or a cleaning agent containing copper oxide and manganese oxide, the cleaning agents having been used for removing, through contact with a harmful gas, a phosphine contained as a harmful component in the harmful gas. According to the present invention, the copper component and/or the manganese component can be effectively recovered from the cleaning agents in a recyclable form.

Method of recovering a cleaning agent

There are disclosed a production apparatus for producing a gallium nitride semiconductor film by HVPE process, a cleaning apparatus for cleaning exhaust gas coming from the above apparatus and an overall production plant for producing a gallium nitride semiconductor by HVPE process. Therein exhaust piping for exhaust gas in the production apparatus, introduction piping for the cleaning apparatus and exhaust gas piping which connects the production apparatus and the cleaning apparatus are each composed of an electroconductive corrosion-resistant material and are each electrically grounded, thereby surely preventing electrostatic charging due to friction between ammonium chloride powders in the exhaust gas and inside walls of exhaust gas piping, and markedly enhancing operational safety.

Production apparatus for producing gallium nitride semiconductor film and cleaning apparatus for exhaust gas

There are disclosed a decompositionally treating agent for fluorocarbons which comprises an aluminum compound and a lanthanoid compound as effective ingredients; a decompositionally treating agent for fluorocarbons which comprises an aluminum compound, a lanthanoid compound and an alkaline earth metal compound as effective ingredients; and a decompositionally treating method for fluorocarbons which comprises decomposing a fluorocarbon by bringing a fluorocarbon-containing gas into contact under heating with a decompositionally treating agent mentioned above or by bringing the above gas into contact under heating with a decompositionally treating agent comprising aluminum oxide as an effective ingredient and thereafter with a decompositionally treating agent comprising a lanthanoid oxide and an alkaline earth metal oxide. It is made possible by the above agent and method to decompose the fluorocarbons contained in an exhaust gas exhausted from a semiconductor manufacturing industry and the like at a decomposition rate of at least 99.9% at a relatively low decomposition temperature of 1000&#xb0; C. or lower without deactivating the agent in a short time, or exhausting a corrosive gas such as hydrogen fluoride in the atmosphere.

Decompositionally treating agent and decompositionally treating method for fluorocarbons

There are disclosed a process for purifying ammonia which comprises bringing crude ammonia into contact with a catalyst comprising manganese oxide as an effective ingredient to remove oxygen and/or carbon dioxide that are contained as impurities in the ammonia, and a process for purifying ammonia which comprises bringing crude ammonia into contact with a catalyst comprising manganese oxide as an effective ingredient, and thereafter with a synthetic zeolite having a pore diameter in the range of 4 to 10 &angst; to remove at least one impurity selected from the group consisting of oxygen, carbon dioxide and moisture that are contained in the crude ammonia. It is made possible by the above process to remove impurities to an extremely low concentration from crude ammonia available on the market for industrial use and crude ammonia from a gallium nitride compound semi-conductor without decomposition of ammonia to generate hydrogen.

Process for purifying ammonia

There are disclosed a process for cleaning a harmful gas which comprises bringing the harmful gas containing as a harmful component, an organosilicon compound represented by the general formula: CH CH&mdash;SiR , CH CH&mdash;Si(OR) , CH CHCH &mdash;SiR or CH CHCH &mdash;Si(OR) , wherein R indicates a saturated hydrocarbon group or an aromatic compound group, into contact with a cleaning agent comprising activated carbon adhesively incorporated with at least one species selected from the group consisting of bromine, iodine, a metal bromide and a metal iodide in which the metal is exemplified by copper, lithium, sodium, potassium, magnesium, calcium, strontium, manganese, iron, cobalt, nickel, zinc, aluminum and tin; and a cleaning agent comprising the same. The cleaning process and the cleaning agent enable to practically clean a harmful gas which is exhausted from a semiconductor manufacturing process and the like by the use of a dry cleaning process.

Cleaning process and cleaning agent for harmful gas

Disclosed is a method for cleaning of the harmful gas, the method comprising mixing harmful gas, discharged from reaction processes using organic metal compounds as the reaction raw materials, with oxygen or air and thereafter bringing the mixture into contact with a catalyst obtained by carrying a noble metal on an inorganic support, a catalyst comprising at least one metal oxide selected from vanadium oxide, chromium oxide, manganese oxide, iron oxide, copper oxide, silver oxide, cobalt oxide and nickel oxide or a catalyst obtained by carrying the metal oxide on an inorganic support, at temperatures between 100&deg; C. and 800&deg; C. to clean the harmful gas. Disclosed also is an apparatus used in the method. The invention ensures that harmful components can be purified in an efficient manner without discharging organic compounds and a large amount of carbon dioxide after the harmful gas is purified, requiring no aftertreatment.

Method of cleaning of harmful gas and cleaning apparatus

Cleaning agent and cleaning process of harmful gas

There is disclosed an active matrix liquid crystal display that suppresses formation of a stripe pattern on the displayed image. An active matrix circuit, a peripheral drive circuit, and A image data signal lines for supplying image data signals are all integrated on a common substrate. The liquid crystal display includes a sampling circuit to which sampling circuit input lines are connected. These sampling circuit input lines are in contact with the image data signal lines and include dummy conducting lines extending to a buffer circuit. These dummy lines average out impedances of the individual image data signal lines, thus making uniform the amounts of image data signals lost from the image data signal lines. Thus, the formation of the stripe pattern is suppressed.

Electro-optical device

There are disclosed a process for cleaning ammonia-containing exhaust gas which comprises bringing the exhaust gas into contact with an ammonia decomposition catalyst (e.g. nickel, ruthenium) under heating to decompose most of the ammonia into nitrogen and hydrogen, subsequently bringing the resultant mixed gas into contact with an ammonia adsorbent (e.g. synthetic zeolite) for adsorbing undecomposed ammonia, and then heating regenerating the adsorbent, while bringing reproduced exhaust gas containing the ammonia desorbed from the adsorbent into contact under heating, with the ammonia decomposition catalyst or another ammonia decomposition catalyst; and an apparatus for carrying out the process. It is made possible by the process and apparatus to efficiently and completely clean ammonia-containing exhaust gas exhausted from a semiconductor manufacturing process and the like without generating useless byproduct and dispensing with secondary treatment.

Process and apparatus for cleaning exhaust gas

A cleaning agent and a cleaning process for efficiently removing noxious halogen-based gases such as fluorine, chlorine, boron trifluoride, boron trichloride and tungsten hexafluoride from exhaust gases from semiconductor fabrication processes. The cleaning agent is produced by adherently adding alkali metal formate and/or alkaline earth metal formate to activated carbon, or adherently adding alkali metal hydroxide and/or alkaline earth metal hydroxide together with alkali metal formate and/or alkaline earth metal formate to activated carbon. By exposing exhaust gases to the cleaning agent, noxious halogen-based gases in the exhaust gases are efficiently removed with little desorption of halogen-based gases adsorbed on the cleaning agent. Also, the cleaning treatment is further improved in safety and efficiency by a pre-treatment cleaning agent comprising a metal oxide or a metal hydroxide and a post-treatment cleaning agent prepared by adherently adding sodium formate to a metal oxide.

Purifying agent and purification method for halogen-containing exhaust gas

Growing community of inventors

Kanagawa, Japan

Kenji Otsuka