Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Matsushita Electronics Corporation

Kenji Orita

Masaaki Yuri

Shinji Nakamura

Masahiro Ishida

Osamu Imafuji

Tetsuzo Ueda

Nobuaki Nagao

Nobuyasu Suzuki

Takahiro Hamada

Atsunori Mochida

Yoshiaki Hasegawa

Shinji Yoshida

Toru Takayama

Kazuhiko Yamanaka

Hiroshi Ohno

Masahiro Ogawa

Shinichi Takigawa

Hideki Kasugai

Nobuyuki Uemura

Manabu Usuda

Tadao Hashimoto

Masahiro Isida

A nitride semiconductor light-emitting device having an optical waveguide includes, in the following order, at least: a first cladding layer; an active layer; and a second cladding layer, wherein the second cladding layer includes (i) a transparent conductive layer comprising a transparent conductor and (ii) a nitride semiconductor layer comprising a nitride semiconductor, the nitride semiconductor layer being formed closer to the active layer than the transparent conductive layer.

Nitride semiconductor light-emitting device

A wavelength conversion element disclosed in the present application includes a phosphor layer including a plurality of phosphor particles and a matrix that is located among the plurality of phosphor particles and is formed of zinc oxide. The zinc oxide is columnar crystals or a single crystal in a c-axis orientation.

Wavelength conversion element, method of manufacturing the same, and LED element and semiconductor laser light emitting device using wavelength conversion element

A wavelength conversion element includes: a plurality of phosphor particles; a first matrix located among a part of the plurality of phosphor particles and formed of zinc oxide in a c-axis orientation; and a second matrix located among a remaining part of the plurality of phosphor particles and formed of a material having a refractive index that is lower than a refractive index of the zinc oxide.

Wavelength conversion element including phosphor particles, and LED element and semiconductor laser light emitting device using wavelength conversion element

A semiconductor light-emitting element includes: a substrate; and a nitride semiconductor multilayer film provided on an upper surface of the substrate and including an active layer. A recess, a stepped portion, or a protruding portion is formed in an active layer or a layer that contacts a lower surface of the active layer. A ridge stripe, which has a front end facet and a rear end facet and serves as an optical waveguide, is formed in an upper part of the nitride semiconductor multilayer film. The distance from a lateral center of the ridge stripe to a lateral center of the recess, the stepped portion, or the protruding portion changes continuously or in stages from the front end facet toward the rear end facet. Bandgap energy of the active layer changes continuously or in stages from the front end facet toward the rear end facet.

Semiconductor light-emitting element and manufacturing method thereof

A nitride semiconductor device includes a multilayer semiconductor structure made of a group III nitride semiconductor and having a light-emitting facet, and a first coating film formed to cover the light-emitting facet of the multilayer semiconductor structure. The first coating film is a crystalline film made of a nitride containing aluminum. The crystalline film is composed of a group of single domains, and the single domain is comprised of a group of grains whose crystal orientation planes have a same inclination angle and a same rotation angle. A length of a boundary between the domains per unit area is 7 &#x3bc;mor less.

A semiconductor light-emitting device includes: a substrate; a plurality of semiconductor layers grown on the substrate and including an active layer; and an electrode formed on the semiconductor layers. An opening in which at least a portion of the semiconductor layers is exposed is formed in the substrate. The electrode faces the opening in the substrate and a portion of the substrate surrounding the opening.

Semiconductor light-emitting device comprising a plurality of semiconductor layers

Projections/depressions forming a two-dimensional periodic structure are formed in a surface of a semiconductor multilayer film opposing the principal surface thereof, while a metal electrode with a high reflectivity is formed on the other surface. By using the diffracting effect of the two-dimensional periodic structure, the efficiency of light extraction from the surface formed with the projections/depressions can be improved. By reflecting light emitted toward the metal electrode to the surface formed with the projections/depressions by using the metal electrode with the high reflectivity, the foregoing effect achieved by the two-dimensional periodic structure can be multiplied.

Semiconductor light emitting element and method for fabricating the same

A nitride semiconductor light emitting device includes a substrate formed of silicon, an insulating film formed on the substrate and a single crystal thin film formed on the insulating film. On the single crystal film, a semiconductor laminated body including a light emitting layer of nitride semiconductor is formed.

Nitride semiconductor light emitting device

A solid state-imaging element including photoelectric conversion element and an optical element such as a photonic crystal is disclosed. The optical element is formed on the photoelectric conversion element, and has a refractive index periodic structure made up of stacked layers of materials with different refractive indices. The refractive index periodic structure is defined by multiple layers along a stacking direction and by a group of concentric similar shapes along an in-plane direction. The optical element may be fabricated via lithography and etching, or an autocloning technique. A solid state-imaging device including an arrangement of several solid-state imaging elements is also disclosed.

Solid-state imaging element, solid-state imaging device, and method for fabricating the same

Semiconductor light emitting element, semiconductor light emitting device, and method for fabricating semiconductor light emitting element

Projections/depressions of a two-dimensional periodic structure are formed in a p-GaN layer () such that the period of the projections/depressions is 1 to 20 times the wavelength of light radiated from an active layer () in a semiconductor. As a result, a diffractive effect achieved by the projections/depressions of the two-dimensional periodic structure change the direction in which the light radiated from the active layer () travels. If the projections/depressions are not provided, light at a radiation angle which satisfies conditions for total reflection at the interface between a semiconductor device and an air cannot be extracted to the outside of the semiconductor device so that the light emission efficiency of the device is low. By contrast, the projections/depressions as formed with a period according to the present invention diffract the light at an angle which does not cause total reflection so that the efficiency with which the light is extracted to the outside of the semiconductor device is improved exponentially. This improves the light emission efficiency of the device.

Semiconductor light-emitting device and method for fabricating the same

The invention provides a semiconductor laser device including an active layer, a semiconductor layer provided with a diffraction grating, an etch-stop layer, a cladding layer provided with a stripe structure, and a current blocking layer arranged at least on a side of said stripe structure, formed in that order on a substrate. In this semiconductor laser device, the etching-stop layer is formed on the semiconductor layer with the diffraction grating, so that damage of the diffraction grating due to etching can be prevented. The invention also provides a distributed Bragg reflection semiconductor laser device, including an active layer, and a current blocking layer having a stripe-shaped window and a diffraction grating formed at least near an end face thereof. This semiconductor laser device can be manufactured with fewer crystal growth processes than conventional semiconductor laser devices.

Semiconductor laser device and method for manufacturing the same

Disclosed is a semiconductor device which comprises a substrate in which surface is formed a depression having a closed figure when viewed from the substrate normal and a semiconductor layer which is formed on the surface of the substrate by crystal growth from at least an inside face of the depression.

Semiconductor device, semiconductor substrate, and manufacture method

A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.

Semiconductor device and semiconductor substrate, and method of fabricating the same

A semiconductor light emitting device of the present invention includes: a substrate; a light emitting layer; a semiconductor layer of a hexagonal first III-group nitride crystal; and a cladding layer of a second III-group nitride crystal. A stripe groove is provided in the semiconductor layer along a <1, 1, &minus;2, 0> direction.

Growing community of inventors

Osaka, Japan

Kenji Orita