Kokusai Electric Corporation

Hitachi-kokusai Electric Inc.

Kenji Ono

Hidenari Yoshida

Tsuyoshi Takeda

Kazuyuki Toyoda

Tadashi Takasaki

Takafumi Sasaki

Takatomo Yamaguchi

Takashi Yahata

Daisuke Hara

Tetsuo Yamamoto

Kazuhiro Morimitsu

Kazuhiko Yamazaki

Ikuo Hirose

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a substrate retainer in a reaction chamber, wherein the substrate retainer is provided with a plurality of slots capable of accommodating a plurality of substrates in a multistage manner; (b) repeatedly performing a set including: (b-1) moving the substrate retainer so as to locate one or more of the slots outside the reaction chamber; and (b-2) charging one or more of the substrates into the one or more of the slots; and (c) moving the substrate retainer such that the plurality of substrates charged in the plurality of slots are accommodated in the reaction chamber.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.

Substrate processing apparatus, substrate retainer and method of manufacturing semiconductor device

Generation of byproducts is inhibited in a buffer space even in a single-wafer-type apparatus using the buffer space. A method of manufacturing a semiconductor device includes (a) loading a substrate into a process chamber; (b) supplying a first-element-containing gas via a buffer chamber of a shower head to the substrate placed in the process chamber; (c) supplying a second-element-containing gas to the substrate via the buffer chamber; and (d) performing an exhaust process between (b) and (c), wherein (d) includes: exhausting an atmosphere of the buffer chamber; and exhausting an atmosphere of the process chamber after exhausting the atmosphere of the buffer chamber.

Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory computer-readable recording medium

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Toyama, Japan

Kenji Ono