Disco Corporation

Kenji Okazaki

Hiroyuki Takahashi

Yoshiteru Nishida

Yoshio Watanabe

Tomotaka Tabuchi

Susumu Yokoo

Junichi Arami

Satoshi Kumazawa

Kentaro Wada

Siry Milan

Susumu Yakoo

A wafer processing method includes: a resin film coating step of coating an upper surface of a wafer with a water-soluble resin and coating a dicing tape exposed between the wafer and a frame with a water-soluble resin, and solidifying the water-soluble resin to form a resin film, a partial resin film removing step of removing the resin film from regions to be divided of the wafer to partially expose the upper surface of the wafer, an etching step of subjecting the regions to be divided of the wafer to plasma etching to divide the wafer into individual device chips, and a whole resin film removing step of cleaning a frame unit to remove wholly the resin film.

Wafer processing method

A method of processing a wafer includes a plasma etching step of supplying an etching gas in a plasma state to the wafer to remove processing strains, debris, or modified layers. The plasma etching step includes turning an etching gas into a plasma state outside of a vacuum chamber which houses the wafer therein and delivering the etching gas in the plasma state into the vacuum chamber through a supply nozzle connected to the vacuum chamber.

Method of processing wafer

A workpiece has a plurality of low-dielectric-constant insulation films and a metallic pattern stacked on a surface of a semiconductor substrate. Devices are formed in a plurality of regions partitioned by streets formed in a grid pattern. Surfaces of the devices formed on the workpiece are covered with a surface protective member, leaving the streets exposed. A dispersion of abrasive grains in an etching liquid capable of dissolving the metallic pattern is blasted against the workpiece together with compressed gas so as to remove the low-dielectric-constant insulation films and the metallic pattern on the streets, thereby exposing the semiconductor substrate. The workpiece is divided with the semiconductor substrate exposed by the wet blasting step subjected to dry etching so as to divide the workpiece along the streets.

Processing method for workpiece

A plasma etching apparatus includes: a housing defining a plasma processing chamber; a workpiece retaining unit disposed within the plasma processing chamber of the housing and retaining a workpiece on an upper surface of the workpiece retaining unit; a processing gas injecting unit injecting a processing gas for plasma generation onto the workpiece retained by the workpiece retaining unit, the processing gas injecting unit including a processing gas jetting portion; a processing gas supply unit supplying the processing gas to the processing gas injecting unit; and a pressure reducing unit reducing a pressure within the plasma processing chamber. The processing gas jetting portion of the processing gas injecting unit includes a central injecting portion and a peripheral injecting portion surrounding the central injecting portion.

Plasma etching apparatus

A wafer processing method includes forming a resist film on the front side of a wafer in an area except division lines, plasma etching the wafer to form a groove on the front side of the wafer along each division line, the groove having a depth greater than a finished thickness, removing the resist film from the front side of the wafer by cleaning, and grinding the back side of the wafer to reduce the thickness of the wafer to the finished thickness, so that the groove is exposed to the back side of the wafer to thereby divide the wafer into individual device chips. In the resist film removing step, a chemical fluid is sprayed to the resist film formed on the front side of the wafer, thereby removing the resist film.

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Tokyo, Japan

Kenji Okazaki