Komatsu Corporation

Nec Corporation

Asahi Glass Company, Limited

Komatsu Electronic Metals Co., Ltd.

Kenji Okamura

Hiroshi Yoshinada

Naritoshi Ohtsukasa

Kunikazu Yanagi

Koji Otsuka

Masashi Ichihara

Masanobu Zenke

Hiroshi Kojima

Toshiyuki Hirota

Masakazu Kobayashi

Junsuke Tomioka

Takeshi Oi

Kazuhiro Mimura

Hiroshi Monden

Masabumi Ito

Shoei Kurosaka

Shuji Fujiwara

Shuichi Inoue

Ryuta Okuwaki

Yasuhide Den

Fumihide Sato

Matsuo Nose

Manzoh Saitoh

Hiromi Arata

Takao Katuyama

Yoichiro Kimura

An automatic control determination unit determines whether to start automatic dumping control. A dumping control unit generates a first command to rotate a bucket in a dump direction until an inclination of the bucket reaches a predetermined dumping completion angle upon determining to start the automatic dumping control. The dumping control unit generates a second command to rotate a boom in a raising direction during a period until the inclination of the bucket reaches the dumping completion angle from an inclination at the time of start of the automatic dumping control.

Control system and control method

A controller constituting a construction machine includes: a target value computing unit that generates a speed target value of a boom based on a lever manipulating signal; a target value correcting unit that corrects the speed target value; and a command signal output unit that outputs a command signal to a boom driving device based on the corrected speed target value. The target value correcting unit includes: a motion information acquiring unit that acquires motion information on a motion of an arm; a maximum value determining unit that determines based on the motion information a maximum correction value for reducing suppression of a floating motion by a floating motion suppressing unit as the motion of the arm becomes faster; and a correction value regulating unit that corrects the speed target value based on the maximum correction value.

Construction machine, method for controlling construction machine, and program for causing computer to execute the method

A construction machine includes: a working equipment; a manipulating unit that manipulates the working equipment; and a controller that controls the working equipment. The controller includes: a rolling compaction determining unit that determines whether or not the working equipment is under a rolling compaction operation for hardening earth and sand through reciprocation; and a command output regulating unit that controls the working equipment so that a motion speed of the working equipment does not exceed a predetermined maximum value when the rolling compaction determining unit determines that the working equipment is under the rolling compaction operation.

Construction equipment, method for controlling construction equipment, and program for causing computer to execute the method

The present invention relates to a low expansion glass substrate which serves as a substrate of a reflective mask used in a lithography step of semiconductor production steps, wherein two side surfaces positioned to face each other among side surfaces formed along a periphery of the low expansion glass substrate, each have a flatness of 25 &#x3bc;m or less.

Low expansion glass substrate for reflection type mask and method for processing same

A glass substrate obtained by a method including measuring flatness of a glass substrate surface and measuring concentration distribution of dopant in the substrate. Processing conditions of the surface are set up for each site of the substrate based on results from the measuring the flatness and the measuring the distribution, and the finishing is carried out while keeping an angle formed by normal line of the substrate and incident beam onto the surface at from 30 to 89&#xb0;. The surface is subjected to second finishing for improving an RMS in a high spatial frequency region. The surface after the second finishing satisfies the requirements: an RMS slope in the region that 5 &#x3bc;m&#x3c;&#x3bb; (spatial wavelength)&#x3c;1 mm is not more than 0.5 mRad and an RMS slope in the region that 250 nm&#x3c;&#x3bb; (spatial wavelength)&#x3c;5 &#x3bc;m is not more than 0.6 mRad.

Method for finishing surface of preliminary polished glass substrate

A controller of a construction machine includes a target command value computing unit generating a speed target command value for normal motion of a working equipment based on a manipulating signal, a target command value correcting unit correcting the command value, and a command signal output unit outputting a command signal to a driving device based on the corrected speed target command value. The target command value correcting unit includes a vibration suppressing unit generating a speed target command value for vibration suppression to suppress generation of vibrations in the working equipment based on the command value, a peak value recognizing unit recognizing a peak value of the command value based on the command value sequentially generated by the target command value computing unit, and a target command value compositing unit compositing the command values according to the peak value to correct the command value.

Construction equipment, method of controlling construction equipment, and program for causing computer to execute the method

A glass substrate obtained by a method including measuring flatness of a glass substrate surface and measuring concentration distribution of dopant in the substrate. Processing conditions of the surface are set up for each site of the substrate based on results from the measuring the flatness and the measuring the distribution, and the finishing is carried out while keeping an angle formed by normal line of the substrate and incident beam onto the surface at from 30 to 89&#xb0;. The surface is subjected to second finishing for improving an RMS in a high spatial frequency region. The surface after the second finishing satisfies the requirements: an RMS slope in the region that 5 &#x3bc;m&#x3c;&#x3bb;(spatial wavelength)&#x3c;1 mm is not more than 0.5 mRad and an RMS slope in the region that 250 nm&#x3c;&#x3bb;(spatial wavelength)&#x3c;5 &#x3bc;m is not more than 0.6 mRad.

The invention provides a method in which waviness generated on a glass substrate surface during pre-polishing is removed, thereby finishing the glass substrate to have a surface excellent in flatness. The method for finishing a pre-polished glass substrate uses ion beam etching, gas cluster ion beam etching or plasma etching, the method including: a step of measuring flatness of the glass substrate surface using a shape measurement unit, and a step of measuring a concentration distribution of the dopant contained in the glass substrate. Processing conditions of the glass substrate surface are set up for each site of the glass substrate based on the results obtained from the step of measuring flatness and the step of measuring a concentration distribution of the dopant. Finishing includes keeping an angle formed by a normal line of the glass substrate and an incident beam onto the glass substrate at from 30&#xb0; to 89&#xb0;.

A controller for a work implement () of a construction machine () comprising: a manipulating signal input unit () including a target value computing section () for generating an operation target value (V) for the work implement () based on a manipulating signal (F, Fa) inputted from a manipulating unit () for manipulating the work implement (), a target value correcting unit () for correcting the generated operation target value (V), and an instruction signal output unit () for outputting an instruction signal to an actuator () for driving the work implement () according to the corrected target value (V); wherein the target value correcting unit () comprises a vibration suppressing unit () for correcting the operation target value (V) to another target value to suppress vibrations of the construction machine () according to the vibration characteristics, which vary according to a posture of and/or a load to the work implement ().

Controller for work implement of construction machinery, method for controlling construction machinery, and program allowing computer to execute this method

A tungsten silicide (WSi) film is formed of tungsten hexafluoride (WF ) and dichlorosilane (SiCl ) as main raw material on a polysilicon film by the CVD method. At the final stage of this film forming process, supply of tungsten hexafluoride is terminated to relax internal stresses. As a result, on the tungsten silicide film, an Si-rich tungsten silicide film containing chlorine ions in a high concentration is formed. Then, before coating a chemical amplification photoresist, these films along with a silicon substrate are soaked in an etching liquid containing hydrogen peroxide to remove the Si-rich tungsten silicide film so that generation of ammonia chloride, which suppresses an alkali developing action, can be controlled. Thus the tungsten silicide film can be patterned by photolithography without pattern defects.

Method of forming photoresist pattern

There is described an apparatus for producing a single crystal ingot capable of stably manufacturing a single crystal ingot by means of the Czochralski method, without being affected by influence of variation in extension of wires or an offset in points clamped by a clamping member. The clamping member is engaged with an engagement step formed in a single crystal which is being pulled by the CZ method, and the single crystal is pulled. The single crystal ingot manufacturing apparatus is provided with a flexible mechanism for absorbing variation in extension of the wires, in intermediate portions of the wires. Variation in extension of the wires is eliminated by means of the flexible mechanism, thereby retaining the single crystal in an upright position. Further, a sacrifice member which deforms so as to conform to the circumference of the engagement step is interposed between the clamping member and the engagement step, thereby preventing occurrence of cracking or deformation in the single crystal.

Apparatus for producing single crystal

In a method of manufacturing a semiconductor device in which a capacitor having a storage electrode is formed on a semiconductor substrate, silicon films are formed on the semiconductor substrate and at the same time first and second endpoint marker layers for dividing the silicon films into three parts in the direction of thickness are formed by using a material different from the material of the silicon films. The silicon films including the first and second endpoint marker layers are etched. The etching depth of the silicon films is controlled based on the type of etched material, thereby forming the storage electrode.

Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device contains a first treatment step of removing a silicon oxide film on a semiconductor substrate (15) in a rare hydrofluoric acid treatment device (12), a second treatment step of forming hemispherical grained silicon on the semiconductor substrate (15) in an HSG-Si forming device (13), and a step of moving the semiconductor substrate (15) treated in the first treatment step to the HSG-Si forming device (13) by means of a semiconductor substrate moving device (14), wherein filtering an air in the semiconductor substrate moving device (14) is conducted so that an amount of organic materials which adhere onto a surface of the semiconductor substrate (15) during a process to the second treatment step is set to 1 ng/cm.sup.2 or less.

Method for manufacturing semiconductor device and semiconductor device

Detecting section detects joint angles and the relative angle of rotation from a plurality of rotatable operating tools mounted on a single mobile platform of a construction machine. Interference distance calculator, having recorded predetermined point positions for each operating tool, derives the distances between the plurality of operating tools on the basis of the detection results and the point positions, and calculates the shortest approach distance from these distances. If this shortest approach distance is less than a prescribed set distance, anti-interference controller issues a warning to alarm via the output controller, and it outputs anti-interference control to hydraulic control section CC such that the approaching tool is halted or slowed down, or the velocity of the operating tool being approached is matched to that of the approaching tool depending on the set mode.

Anti-interference device for construction machine

To prevent toppling of a construction machine where a plurality of operating tools are provided on a single mobile platform, a control section detects the cylinder axial forces, joint angles and relative angle of rotation for a plurality of operating tools provided rotatably on a single mobile platform, and a moment calculator calculates a composite moment for the plurality of operating tools on the basis of these detection results and further calculates a stability value relating to toppling, from this composite moment and a reference moment. If the calculated stability value is less than a reference value, an anti-toppling controller issues an alarm from the alarm via an output controller and halts the operation of the plurality of operating tools, or alternatively, if the operation of the operating lever input via the lever gain calculator will cause the stability to fall below a set value, it controls a hydraulic control section such that the action of the operating tool corresponding to this operation is prohibited. By allowing the operating tool located on the base where the control section and hydraulic control section are installed to be detected by electrical signals, but using pressure signals only for the other operating tools, the need for electrical swivels between the plurality of devices is removed.

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Tokyo, Japan

Kenji Okamura