Sony Corporation

Renesas Technology Corp.

Kenji Ohsawa

Makoto Ito

Hidetoshi Kusano

Kazuhiro Sato

Takao Ito

Hideyuki Takahashi

Mutsumi Nagano

Akira Kojima

Haruhiko Makino

Tomoshi Ohde

Keiji Kurata

Masayuki Ohsawa

Yasushi Otsuka

Satoshi Takahashi

Hirotaka Nishizawa

Takashi Totsuka

Keiichi Tsutsui

Yoshitaka Aoki

Nobuyuki Yasuda

Yuji Ikegami

Akira Tsutsumi

Hideaki Bando

Hiroyuki Shigeta

Masayuki Ohta

Shimetomo Fueki

Koichiro Tanno

Masayuki Osawa

Hiroshi Kumakura

Junji Suzuki

Muneyuki Haruki

In a memory card with a newly-added module for performing data communication, data communication is stably performed without receiving a noise effect. As an embodiment of the present invention, a memory cardhas a thin-plate-shaped holding member, a memory sectionprovided as buried in the holding member, plural first connection pieces-connected to the memory section, a data communication sectionprovided as buried in the holding member, and two connection piecesconnected to the data communication section. The two second connection piecesare disposed at the end of a row part Ron which only the plural first connection pieces-are aligned. One first connection piecepositioned at the end of the row part Ris a ground terminal. That is to say, in the plural first connection pieces-, the first connection pieceadjacent to the second connection pieceis a ground terminal.

Memory card

In a semiconductor device, a plurality of wiring films are formed on a front surface of a base comprising an insulating resin and having electrode-forming holes, the surfaces of the wiring films and the surface of the base being positioned on the same plane and at least parts of the wiring films overlapping with the electrode-forming holes; a conductive material is embedded into the electrode-forming holes to form external electrodes on the back surface, away from the wiring films, of the base; a semiconductor element is positioned on the front surface of the base with an insulating film therebetween, the back surface of the semiconductor element being bonded to said front surface of the base; wires bond the electrodes of the semiconductor element to the corresponding wiring films; and a resin seals the wiring films and the wires.

Method for making semiconductor device using a nickel film for stopping etching

Metal films (for instance, gold films or palladium films) to constitute bumps are formed on a metal base by electrolytic plating. Then, a circuit wiring including inner leads is formed by electrolytic plating with a metal so that the inner leads are connected to the respective metal films.

Lead frame, manufacturing method of a lead frame, semiconductor device, assembling method of a semiconductor device, and electronic apparatus

Method for making a semiconductor device

A lead frame comprises: outer leads formed by a metal base member; first interconnection film portions formed by a metal plating layer, each of which is disposed inside the outer leads in such a manner as to be connected to an inner end of one principal plane of the corresponding one of the outer leads, and at least one second interconnection film portion formed by the metal plating layer, which is disposed inside the outer leads in such a manner as not to be connected to the outer leads; and an insulating film formed to cover planes, opposed to the outer leads, of the first and second interconnection film portions, thereby holding the first and second interconnection film portions; wherein planes, opposed to the insulating film, of the first and second interconnection film portions are taken as semiconductor element mounting planes. With this configuration, the lead frame allows a plurality of semiconductor elements to be mounted on one semiconductor device without increasing the number of assembling steps, while making the thickness of the semiconductor device thin, and reducing the reliability and the production yield.

Lead frame and production method thereof, and semiconductor device and fabrication method thereof

To enable readily forming the etching stop layer of a lead frame with multilayer structure by plating without using a large-scale device, enhance adhesive strength between the etching stop layer and an adjacent metal layer and prevent peeling caused by deterioration caused by the invasion of a chemical between the etching stop layer and each adjacent metal layer from occurring, an etching stop layer is formed by nickel or a nickel alloy in a method of manufacturing a lead frame at least provided with an etching process for selectively etching metal layers using an etching stop layer as an etching stopper in a state in which a thick metal layer is formed on one side of the etching stop layer as an intermediate layer and a thin metal layer is formed on the other side and a process for etching the etching stop layer using the metal layers on both sides as a mask.

Semiconductor chip having an underplate metal layer

In a lead frame, leads are formed on a surface of protective insulation film having a device hole. Protruding electrodes (solder balls) are farmed on the surface of the leads opposite the surface closer to the protective insulation film. A reinforcement plate is also formed on the rear surface of the protective insulation film.

Lead frame and manufacturing method thereof

Method of producing a semiconductor chip having an underplate metal layer

A semiconductor package provided with a reinforcing plate on the side of the lead joined face of which a chip housing concave portion is formed, a semiconductor chip housed and fixed in the chip housing concave portion of this reinforcing plate, a plurality of leads joined and held on the lead joined face of the reinforcing plate, the inner lead section of which is joined to the semiconductor chip via a bump and in the outer lead section of which a protruded electrode is formed, a solder resist film formed on the lead except the bump formed area and the electrode formed area of this lead and a polyimide film formed on the side of the inner lead section of the lead on the solder resist film and the manufacturing method are disclosed and hereby, the quality of the semiconductor package with ultra-multipin structure is stabilized.

Semiconductor package and the manufacturing method

According a method of manufacturing a lead frame of the present invention, a plurality of leads each having an inner lead portion and an outer lead portion are formed on a metal base having on its surface a nickel layer by copper plating. An insulative holding film for holding each of the leads is formed. A projecting electrode is formed on the outer lead portion. Respective leads are separated by selectively removing the metal base by etching.

Method of manufacturing lead frame and integrated circuit package

In a semiconductor chip, electrode pads are formed in a peripheral portion of the chip front surface and the inside of the pad forming region is made an effective device region. An insulating, thick-film protective layer is laminated on the effective device region of the semiconductor chip. Leads are constituted of outer leads that are protected by an insulating film and inner leads that are integral with and extend from the outer leads. External connection terminals are formed on the outer leads, and the tips of the inner leads are connected to the electrode pads of the semiconductor chip. A reinforcement plate is provided so as to surround the semiconductor chip. A peripheral space of the semiconductor chip is charged with a sealing resin. According to a second aspect of the invention, a semiconductor chip has electrode pads on the chip front surface and disposed inside a conductive outer ring. A film circuit is disposed on the chip front surface side. External connection terminals are formed on the film circuit so as to project therefrom. First leads electrically connect part of the electrode pads to part of the external connection terminals. A second lead electrically connects a grounding or power supply electrode pad to the outer ring, and a third lead electrically connects a grounding or power supply external connection terminal to the outer ring. A conductive stage is bonded to the chip back surface and the outer ring through respective conductive bonding layers.

Semiconductor package with improved cross talk and grounding, and method of manufacturing same

Lead frame, the manufacturing method, semiconductor device and the

Semiconductor package including chip housing, encapsulation and the

Growing community of inventors

Kanagawa, Japan

Kenji Ohsawa