Fujitsu Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Kenji Nomura

Wensheng Wang

Junichi Watanabe

Ko Nakamura

Kazuaki Takai

Yoshimasa Horii

Masaki Kurasawa

Aki Dote

Tomohiro Takamatsu

Naoyuki Sato

John David Baniecki

Kazuaki Kurihara

Takeshi Shioga

Mineharu Tsukada

Hidetoshi Matsuoka

Jeffrey Scott Cross

Hideshi Yamaguchi

Igor Stolichnov

A method includes: for each of a delivery source and each of plural delivery destinations to which goods are delivered, receiving distance information indicating a distance between points, delivery amount information indicating a total delivery amount of the goods to each of the plural delivery destinations, and maximum delivery amount information indicating a maximum delivery amount per delivery; calculating a first cost to deliver the goods for the total delivery amount from the delivery source to each of the plural delivery destinations while setting the maximum delivery amount indicated by the maximum delivery amount information; calculating a second cost to deliver the goods for the total delivery amount from the delivery source to each of the delivery destinations; executing selection processing for selecting a delivery destination by using the first cost and the second cost; and creating a delivery plan by using a result of the selection processing.

Non-transitory computer-readable storage medium for storing delivery plan creation support program, delivery plan creation support method, and information processing apparatus

An analysis device includes an X-ray generation part configured to generate four monochromatic X-rays with different energies to irradiate a sample, an electrically conductive sample stage configured to place the sample thereon and formed of an electrically conductive material, an electrode configured to detect an electric current carried by irradiating the sample with the four monochromatic X-rays with different energies, and an electric power source configured to apply a voltage between the electrically conductive sample stage and the electrode, wherein the four monochromatic X-rays with different energies are X-rays included within a range from an absorption edge of a compound semiconductor included in the sample to a higher energy side of 300 eV.

Analysis device, analysis method, film formation device, and film formation method

An X-ray analysis apparatus includes: an X-ray source that emits an X-ray irradiating a specimen; a specimen holding unit that holds the specimen; and an X-ray detecting unit that detects the X-ray diffracted by the specimen; wherein the specimen holding unit includes a second &#x3c6;-axis rotating stage rotating the specimen about a &#x3c6;-axis, a first &#x3c6;-axis rotating stage rotating the entirety of the second &#x3c6;-axis rotating stage about the &#x3c6;-axis, the second &#x3c6;-axis rotating stage being disposed on the first &#x3c6;-axis rotating stage, a &#x3c6;-axis rotating stage that rotates the entirety of the first &#x3c6;-axis rotating stage about a &#x3c6;-axis, an &#x3c9;-axis rotating stage that rotates the entirety of the &#x3c7;-axis rotating stage about an &#x3c9;-axis, and a 2&#x3b8;-axis rotating stage rotating the X-ray detecting unit about the 2&#x3b8;-axis, wherein the second &#x3c6;-axis rotating stage unit rotates at a speed higher than that of the first &#x3c6;-axis rotating stage.

X-ray analysis apparatus and method of X-ray analysis

There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3&#xb0; or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5&#xb0; or less, and a capacitor upper electrode.

Manufacturing method of a semiconductor device

Semiconductor device and manufacturing method of a semiconductor device

After a step of fabricating a MOS transistor () on a semiconductor substrate () and further steps up to bury a W plug (), an Ir film (), an IrOfilm (), a PZT film (), and an IrOfilm () are formed sequentially over the entire surface. The composition of the PZT film () is such that the content of Pb exceeds that of Zr and that of Ti. After processing the Ir film (), the IrOfilm (), the PZT film () and the IrOfilm (), annealing is effected to remedy the damage to the PZT film () that is caused when the IrOfilm () is formed and to diffuse Ir in the IrOfilm () into the PZT film (). As a result, the Ir diffused into the PZT film () concentrates at an interface between the IrOfilm () and the PZT film () and at grain boundaries in the PZT film (), and the Ir concentrations at the interface and boundaries are higher than those in the grains.

Ferroelectric capacitor and method of manufacturing the same

A capacitive element which includes: a silicon substrate (base material); a base insulating filmformed on the silicon substrate; and a capacitor Q constituted by forming a bottom electrode, a capacitor dielectric filmand a top electrodeon the base insulating film. The capacitive element is characterized in that the capacitor dielectric filmis composed of a material with the formula (Ba,Sr)YTiO, where 0&#x3c;p/(p+m+Q)&#x2266;0.015, &#x2212;0.5&#x3c;&#x3b4;&#x3c;0.5.

Capacitive element and method of manufacturing the same

Additional elements of Ca, Sr, and Ir are added to a single layer lead lanthanum zirconate titanate (PLZT), thereby decreasing a c/a ratio to within a range from 1.00 to 1.008 smaller than a general c/a of a range from about 1.01 to 1.03 generally used in a lead lanthanum zirconate titanate (PLZT) crystal having a crystal structure of a tetragonal system. With this arrangement, a large switching charge Qsw can be obtained without thinning the PLZT layer even when the operation voltage is 3.0 V or less.

Ferroelectric element and method of manufacturing ferroelectric element

Growing community of inventors

Kawasaki, Japan

Kenji Nomura