Canon Kabushiki Kaisha

Tokyo Institute of Technology

Toyoda Koki Kabushiki Kaisha

Japan Science and Technology Agency

Denki Kagaku Kogyo Kabushiki Kaisha

Tokyo Institute of Tech

Kenji Nomura

Hideo Hosono

Toshio Kamiya

Masafumi Sano

Katsumi Nakagawa

Keishi Saito

Masahiro Hirano

Kunimichi Nakashima

Hiromichi Ota

Tatsuya Iwasaki

Akira Tsuboi

Tohru Den

Takashi Kawasaki

Katsumi Abe

Toru Den

Hideya Kumomi

Masaharu Suzuki

Tetsuro Yamakage

Hiroaki Tanji

Shojiro Watanabe

Hisato Yabuta

Hideyuki Emoto

Hideki Hirotsuru

Kunihiko Eto

Akira Miyai

Hideo Nishimura

Masahiro Ibukiyama

Toshiharu Takashima

Toshifumi Hasegawa

Yoji Kamiya

Ryuichi Terasaki

Fumihiko Ohkoshi

Kengo Yoshioka

Mitsuaki Saito

Toshihiro Goto

Kazuyuki Hiruta

Shigeru Doi

Kazuo Eguchi

Toru Nakaso

Yoshiki Ochiai

Katsuyoshi Noro

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

Amorphous oxide and field effect transistor

The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10/cm, and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode, a drain electrode, a gate electrode, a gate insulating film, and a channel layer, an amorphous oxide having an electron carrier concentration less than 10/cmis used in the channel layer

Amorphous oxide and thin film transistor

A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO(ZnO)(wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm/(V&#xb7;sec) and an electron carrier concentration is less than 10/cm, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

Switching element

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.

Display

An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Light-emitting device

Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 10/cmis used for the N-type region.

Integrated circuits utilizing amorphous oxides

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1&#xd7;10/cm, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

Field effect transistor

Provided is a phosphor material for a white LED with a blue LED or ultraviolet LED as a light source. A phosphor comprises an &#x3b1;-sialon represented by the formula: (M1)(M2)(Si)(Al)(O)(N)where M1 is at least one element selected from the group consisting of Li, Mg, Ca, Y and lanthanide metals (except for La and Ce), M2 is at least one element selected from Ce, Pr, Eu, Tb, Yb and Er, 0.3&#x2266;X+Y&#x2266;1.5, 0&#x3c;Y&#x2266;0.7, 0.6&#x2266;m&#x2266;3.0, 0&#x2266;n&#x2266;1.5 and X+Y=m/2; and the oxygen content in a powder of the &#x3b1;-sialon is at most 0.4 mass % larger than a value calculated based on the formula.

Fluorescent substance and process for producing the same, and luminescent element using the same

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Sensor and image pickup device

Growing community of inventors

Yokohama, Japan

Kenji Nomura