Fujitsu Corporation

Mitsubishi Heavy Industries Limited

Kenji Nishida

Kenji Kawasaki

Yoshiyuki Kondo

Noriaki Sato

Jiro Kasahara

Nobutaka Nakajima

Kengo Shimamura

Masato Yamasaki

Kosuke Kitamura

In a multi-stage steam-water separation device and a steam-water separator, a first swirl vane () which causes a gas-liquid two-phase flow to rise while swirling is provided in a first riser () of a first steam-water separator (), and a second swirl vane () which causes the gas-liquid two-phase flow which has passed through the first swirl vane () to rise while swirling at a speed higher than that provided by the first swirl vane (), is provided in a second riser ().

Multi-stage steam-water separation device and steam-water separator

In a two-phase flow exciting force evaluation method of the present invention, the surface of one of a plurality of tube bodies () is at least partially formed from a conductive material, displacement or stress of the tube body () is measured in a state of being vibrated by a shaking device (), and a void fraction of a two-phase flow (F) flowing in the vicinity of the tube body () is measured based on the potential difference between an electric potential at a predetermined position on the surface of the tube body (), and a reference electric potential.

Two-phase flow exciting force evaluation method and device acting on a plurality of tube bodies arranged to intersect with the flow

A contact structure for connecting a semiconductor device to a wiring electrode includes a semiconductor layer forming a part of the semiconductor device. A first contact layer of reduced resistivity covers a surface of the semiconductor layer. An insulating structure is provided on the first contact layer so as to bury the first contact layer underneath. A penetrating hole is opened through the insulating structure so as to expose a part of the first contact layer. A second contact layer of reduced resistivity is provided on the part of the first contact layer exposed by the penetrating hole. The second contact layer extends from a bottom of the penetrating hole along its side wall. A conductor layer forms the wiring electrode on the second contact layer.

Contact structure for connecting an electrode to a semiconductor device

A contact structure for connecting a semiconductor device to a wiring electrode includes a semiconductor layer forming a part of the semiconductor device. A first contact layer of reduced resistivity covers a surface of the semiconductor layer. An insulating structure is provided on the first contact layer so as to bury the first contact layer underneath. A penetrating hole is opened through the insulating structure so as to expose a part of the first contact layer. A second contact layer of reduced resistivity is provided on the part of the first contact layer exposed by the penetrating hole. The second contact layer extends from a bottom of the penetrating hole along its side wall. A conductor layer forms the wiring electrode provided on the second contact layer.

Contact structure for connecting an electrode to a semiconductor

A diffusion barrier structure includes a first barrier layer provided on a substrate of a semiconductor device for preventing transport of component elements of the substrate and the electrode from passing therethrough by diffusion. An interface layer is formed in the first barrier layer adjacent to a top surface of the first barrier layer for eliminating the effect of microstructure in the first barrier layer on crystal growth to be made on the first barrier layer. A second barrier layer of a same material as the material of the first barrier layer is provided on the first barrier layer so as to be sandwiched between the first barrier layer and the metal electrode for preventing the component elements from being transported therethrough by diffusion.

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Tokyo, Japan

Kenji Nishida