Hitachi-high-technologies Corporation

Hitachi, Ltd.

Kenji Nakata

Shoji Okiguchi

Tooru Ueno

Yoshitaka Kai

Takeshi Oono

Hidehiro Oomae

Shigeharu Minami

Atsushi Itou

Naoyuki Tamura

Tsunehiko Tsubone

Kouji Nishihata

Masaru Izawa

Keizo Suzuki

Shigekazu Kato

Seiichi Watanabe

Tetsunori Kaji

Sadayuki Okudaira

Yoshifumi Ogawa

Hiroyuki Shichida

Katsuya Watanabe

Kouichi Yamamoto

In a plasma processing apparatus in which a wafer is processed while supplying radio frequency power to electrodes disposed in a sample stage in a processing chamber within a reactor via a matching box, by matching a specific value of power at transition points of data values of at least two kinds among characteristic data including light emission intensity of the plasma, magnitude of its time variation, a matching position of the matching box, and a change of a value of a voltage of the radio frequency power supplied to the electrodes detected by varying the power to a plurality of values during the processing with a value detected by using characteristic data which is detected during the processing executed on a wafer of the same kind in a different reactor, the differences of the states inside the processing chamber or plasma among a plurality of semiconductor processing apparatuses or reactors are reduced.

Plasma processing apparatus and plasma processing method

A vacuum processing apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.

Vacuum processing apparatus

A vacuum processing apparatus and method in which the apparatus includes vacuum processing chambers for subjecting a sample to vacuum processing, a vacuum carriage, a switchable chamber, a cassette support for supporting a plurality of cassettes capable of housing samples, and a waiting cassette support for supporting a waiting cassette that differs from the cassettes supported on the cassette support and capable of having a number of samples. An atmospheric carriage enables carrying a sample among a given cassette of the plurality of cassettes or the waiting cassette. A controller effects control for carrying unprocessed and processed samples among the given cassette, the waiting cassette and the vacuum processing chamber, so that a mixture of both processed and unprocessed samples does not exist in the given cassette or the waiting cassette.

Vacuum processing apparatus and vacuum processing method

A vacuum processing apparatus and method includes at least one vacuum processing chamber, at least one carriage for carrying the sample from a given cassette into and out of the vacuum processing chamber. A controller performs carriage control for carrying the sample taken out of the given cassette into the vacuum processing chamber, and for carrying the processed sample out of the vacuum processing chamber. A waiting cassette support supports a waiting cassette in which an unprocessed sample from the given cassette or a processed sample from the given cassette after vacuum processing is placed so as to prevent the processed and unprocessed sample from being mixed with each other.

Vacuum processing method

A vacuum treating apparatus having a vacuum treating chamber for treating a to-be-treated substrate in vacuum, includes a plurality of substrate cassettes which are installed in the open air and hold substrates that are to be conveyed into the vacuum treating chamber, a device for conveying the substrates between the substrate cassettes and the vacuum treating chamber, and a device which selects either that the to-be-treated substrate after treated in the vacuum treating chamber be held in the substrate cassette from which the to-be-treated substrate was taken out or that the to-be-treated substrate after treated in the vacuum treating chamber be held in another substrate cassette which is different from the substrate cassette.

Vacuum processing system

A microwave penetrating window and a cavity which are substantially equal in diameter to a plasma generating chamber are successively connected to the plasma generating chamber and microwaves are introduced via the cavity into the plasma generating chamber. A processing gas in the plasma generating chamber is converted into a plasma by means of the microwaves introduced into the plasma generating chamber and the microwaves in specific modes are resonated in between a microwave reflective interface with the plasma generated in the plasma generating chamber and the reflective edge face of the cavity. The microwaves in the specific modes are thus formed in the cavity and the energy of the microwaves in the specific modes is increased by resonance. The boosted energy is added to the plasma and the plasma is densified accordingly. Moreover, a plasma excellent in uniformity and stability can be generated by resonating the microwaves in the specific modes in the presence of a uniform electromagnetic field.

Plasma generating method and apparatus and plasma processing method and

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Hikari, Japan

Kenji Nakata