Denso Corporation

Kenji Nakashima

Masahiko Ishii

Noriyuki Iwamori

Atsushi Komura

Hirofumi Funahashi

Takeshi Kuzuhara

Manabu Koike

Jiro Sakata

In a method of manufacturing a semiconductor device, after performing ion-implantation and before forming an oxide film, a silicon substrate is disposed within a furnace to undergo a heat treatment at a temperature equal to or higher than 950&deg; C. for a specific time period (equal to or longer than 15 minutes). When performing the heat treatment and when raising a temperature up to the heat treatment temperature, oxygen is supplied together with nitrogen gas (inert gas). A supply amount of oxygen is controlled to be equal to or less than 5% when raising the temperature up to the heat treatment temperature, and to be equal to or less than 2% when performing the heat treatment. After the heat treatment, the oxidation film is formed. As a result, crystal defects (OSFs) are prevented from being produced on the silicon substrate surface.

Method of manufacturing semiconductor device

Growing community of inventors

Aichi-gun, Japan

Kenji Nakashima