Tokyo Shibaura Denki Kabushiki Kaisha

Nhk Spring Co., Ltd.

Kenji Murakami

Takahiro Fujii

Ryohei Shigematsu

Shinji Iino

Hiroshi Yagame

Kousuke Matsubara

Kiyoshi Nakajima

Seiji Hayashi

Output gears are disposed so as to be movable toward and counter to plural second input gears to which rotation of the motor is transmitted, and so as to be biased toward the plural second input gears. A cam, which has plural recesses provided at the periphery thereof, is disposed at the inside of the output gear. The cam is rotated, and a pin of the output gear enters the recess, so that the output gear is moved toward the second input gear, and the output gear is engaged with the second input gear.

Multi-shaft drive device

An impact absorbing device includes an attachment component having one-or-more holes, an impact absorption pipe which absorbs external impacts and arranged so that it can slide axially and coaxially within the attachment component, one-or-more movable resistance bodies arranged so that they can move freely within the one-or-more holes, an impact absorption pipe movement component support component, an impact absorption pipe movement component, a support part having a first section and a second section formed in this order so that a distance between each of the sections and an interior side wall of the attachment component becomes smaller respectively, a support part movement component which provides an energization power to the support part, wherein the first section is in a position which faces the one-or-more holes of the attachment component when the support part comes into contact with a bottom part of the attachment component.

Impact absorbing device

A semiconductor integrated circuit includes pouch-shaped (in sectional view) isolation regions made of dielectric material consisting of boron and phosphor doped silicate glass. A circuit component is formed in an active region surrounded by adjacent isolation regions. Each pouch-shaped (in sectional view) isolation region is made using an anisotropic etchant and an isotropic etchant successively. There is a method for manufacturing the above device with high integration density and high operating speed.

Semiconductor integrated circuit with isolation region made of

A resistive element which is formed in a semiconductor substrate comprises a first semiconductor region which is formed in the semiconductor substrate and in which an impurity is diffused at a first concentration; a second semiconductor region which is connected to the first semiconductor region at one end and in which an impurity is diffused at a second concentration higher than the first impurity concentration; a third semiconductor region which is connected to the first semiconductor region at the other end and in which an impurity is diffused at a third concentration higher than the first impurity concentration; and the second and third semiconductor regions respectively including a portion whose cross section has a smaller area than the area of a boundary defined by the second and third semiconductor region with the first semiconductor region.

Growing community of inventors

Yokohama, Japan

Kenji Murakami