Stanley Electric Co., Ltd

Kenji Moriyama

Takuya Kazama

Wataru Tamura

Yasuyuki Miyake

Atsushi Muramatsu

Kiyoshi Kanie

Single-phase manganese oxide particles having a wurtzite crystal structure. The particles can be obtained by thermally decomposing a compound containing manganese. In this procedure, a reducing agent consisting of at least one of a polyol-based material and an ethylene glycol stearate-based material is added as an additive to the reaction system. It is heated at a first temperature (200° C. or lower) under a reduced pressure atmosphere, then the temperature is raised, and the product is heated at a temperature higher than the first temperature under an inert gas atmosphere.

Wurtzite-type manganese oxide particles and method for producing same

A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

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Tokyo, Japan

Kenji Moriyama