Mitsui Toatsu Chemicals, Incorporated

Kenji Miyachi

Nobuhiro Fukuda

Yoshinori Ashida

Masato Koyama

Sadao Kobayashi

Hidemi Takenouchi

Takayuki Teramoto

Yoji Kawahara

A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode.

Amorphous silicon solar cell and method for manufacturing the same

A method for forming an amorphous semiconductor film, which comprises (a) a film-forming step of forming a semiconductor film having not more than 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 .ANG., and (b) a modifying step of modifying the formed film, the steps being repeated multiple times.

Semiconductor film and process for its production

A method for forming a dihydride rich amorphous silicon semiconductor film suitable for use as a window material of solar cells only from a silicon material, which comprises decomposing a gaseous mixture composed of disilane, a dopant capable of imparting p-type electrical conductivity and a diluent gas by applying a glow discharge energy, and thereby forming a semiconductor film having an optical band gap of at least 1.8 eV, preferably more than 1.9 eV, on a substrate.

Method for forming window material for solar cells and method for

Growing community of inventors

Yokohama, Japan

Kenji Miyachi