Kabushiki Kaisha Toshiba

Kenji Matsuzaki

Satoshi Okada

Hiromichi Suzuki

Hiroaki Tsunoda

Masahisa Sonoda

Eiji Sakagami

Isao Ohba

Takanori Matsumoto

Mitsuaki Shimamura

Masaki Yoda

Yutaka Togasawa

Wataru Kono

Hisashi Hozumi

Hidemi Kanetaka

Takayuki Shibuya

Yusuke Okada

According to one embodiment, a laser welding apparatus has a laser irradiation head that is arranged in an outer frame and is divided inside into a light source side and an irradiation side by a partitioning member. The apparatus also has a gas jet nozzle that is formed so as to irradiate a portion to be welded with the laser light and jet the inert gas to the portion to be welded; and a welding wire feed pipe that sequentially feeds a welding wire. The apparatus also has a welding wire contact mechanism that includes a measuring means for measuring a distance between the extremity of the irradiation side and the extremity of the welding wire, and is formed so that the extremity of the welding wire is brought into contact with and pressed against the portion to be welded by an elastic member.

Laser welding apparatus

A method of fabricating a semiconductor device includes forming a first film on a processed film, patterning the first film into a pattern with smaller width and a space with larger width, forming a second film along upper and side surfaces of first film and an upper surface of second film, etching the second film thereby to expose upper surfaces of first film and processed film while part of second film remains along the side surface of first film, etching the first film under the condition that the first film has higher etch selectivity than the second film, etching an upper part of second film under the condition that the second film has a higher etch selectivity than the processed film, after the first film has been etched, and etching the processed film with the second film serving as mask after the upper part of second film has been etched.

Method of fabricating semiconductor device

The present invention relates to a semiconductor device, comprising a semiconductor substrate; a gate insulating film formed on the semiconductor substrate; a plurality of first polycrystalline silicon layers formed on the gate insulating film and including recesses formed therebetween; an inter-gate insulating film formed along the recesses on the first polycrystalline silicon layers; a second polycrystalline silicon layer having an upper flat surface and formed directly on the inter-gate insulating film; an etch-stopping insulating film made from a material different from a material of the inter-gate insulating films and formed on the second polycrystalline silicon layers into a flat plate shape, the etch-stopping insulating film being located immediately above the recesses between the first polycrystalline silicon layers so as to cover the first polycrystalline silicon layers and the recesses between the first polycrystalline silicon layers; and a third polycrystalline silicon layer formed on the etch-stopping insulating film.

Semiconductor device and method of fabricating the same

A method of manufacturing a semiconductor device includes removing a low-resistivity metal film, conductive layer, third insulating film and an upper part of the electrode layer in a gate electrode isolation region with a gate forming pattern serving as a mask, forming a protecting film so that the protecting film covers the low-resistivity metal film, conductive layer, third insulating film and upper surface of the electrode layer, removing the protecting film formed on the upper surface of the electrode layer located in the upper surface of the electrode layer in the gate electrode isolation region, removing the electrode layer in the gate electrode isolation region, and removing residue of the protecting film.

Semiconductor device and method of manufacturing the same

A method for manufacturing a semiconductor device includes forming a gate-insulating film on a semiconductor substrate; forming a gate electrode on the gate-insulating film to be electrically insulated from the semiconductor substrate; etching the gate electrode, the gate insulating film and the semiconductor substrate to form a trench which is used to electrically isolate a device region for forming a device from the remainder region on the substrate top surface; and etching the inside of the trench using a gas containing Cland HBr with a different condition from the etching condition of the semiconductor substrate.

An antenna device which is connected to a radio module performing radio communications with a system using a first band and a system using a second band, has an antenna element which transmits/receives radio signals in the first and second bands. The antenna device has first and second matching circuits corresponding to the first and second bands, and also disposes a switching circuit between the first and second bands and the radio module. A first filter circuit is connected between the first matching circuit and the antenna element. The first filter circuit passes the radio signal in the first band and also attenuates the radio signal in the second band. Meanwhile, a second filter circuit is connected between the second matching circuit and the antenna element. The second filter circuit passes the radio signal in the second band and also attenuates the radio signal in the first band.

Growing community of inventors

Mie, Japan

Kenji Matsuzaki