Kabushiki Kaisha Toshiba

Toshiba Electronic Devices & Storage Corporation

Kenji Maeyama

Yusuke Kawaguchi

Kenya Kobayashi

Keiko Kawamura

Kouta Tomita

Kikuo Aida

Koji Matsuo

A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The control electrode is provided in a trench between the semiconductor part and the second electrode. The semiconductor part includes first and second layers. Between the first layer of a first conductivity type and the second electrode, the second layer of a second conductivity type is provided. The second electrode includes first and second contact portions. The first contact portion extends into the second layer. The second contact portion contacts a surface of the semiconductor part. In the second layer, the first contact portion has a first width at a first position and a second width at a second position. The first position is positioned between the first electrode and the second position. The first width is larger than the second width.

Semiconductor device

A semiconductor device includes a first semiconductor region, a second semiconductor region between a first gate electrode and a second gate electrode that is disposed apart from the first gate electrode in a first direction, third and fourth semiconductor regions provided on respective portions of the second semiconductor region, an insulating region provided between the third semiconductor region and the fourth semiconductor region, and an electrode provided on the third semiconductor region and the fourth semiconductor region and electrically connected to the third semiconductor region and the fourth semiconductor region. The fourth semiconductor region is parallel to the third semiconductor region in a direction intersecting the first direction. The fourth semiconductor region has an impurity concentration higher than that of the second semiconductor region. A lower end of the insulating region is positioned lower than a boundary surface of the second semiconductor region and the third semiconductor region.

A semiconductor device includes a first-conductive-type first semiconductor layer having a first surface and an opposing second surface. A first-conductive-type second semiconductor layer is on the first surface, and a second-conductive-type third semiconductor layer is on the second semiconductor layer. A first-conductive-type fourth semiconductor layer is on the third semiconductor layer. A first electrode is provided on the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer via an insulating film. A second electrode is on the fourth semiconductor layer. A third electrode is separated from the second electrode in a second direction. The third electrode has a width in the second direction, and the width of the third electrode narrows from a first depth to a second depth. An angle of the side surface of the second semiconductor layer is greater than or equal to 90 degrees.

Semiconductor device, and method of manufacturing the same

A semiconductor device includes: a semiconductor layer, a first semiconductor region provided on a major surface of the semiconductor layer, a second semiconductor region provided in a surface portion of the first semiconductor region, a trench extending through the second semiconductor region and the first semiconductor region to the semiconductor layer, a first insulating film provided on an inner wall of the trench, a third semiconductor region filling the trench below an interface between the semiconductor layer and the first semiconductor region, a second insulating film provided on the third semiconductor region, a gate electrode filling the trench above the second insulating film. A portion of the first insulating film in contact with the semiconductor layer is opened. The semiconductor layer is in contact with the third semiconductor region through the opened portion.

Growing community of inventors

Kanagawa Ishikawa, Japan

Kenji Maeyama