Hitachi-high-technologies Corporation

Hitachi, Ltd.

Tokyo Gas Company Limited

Hitachi High-tech Corporation

Kenji Maeda

Masaru Izawa

Kenetsu Yokogawa

Hiroyuki Kobayashi

Ken Yoshioka

Tsutomu Tetsuka

Hideyuki Kazumi

Tsunehiko Tsubone

Manabu Edamura

Masatsugu Arai

Tadamitsu Kanekiyo

Akira Doi

Ryoji Nishio

Tadashi Kohno

Isaburo Hosoi

Junko Hirayama

Satoshi Sakai

Saburo Kanai

Asuka Ito

Kazunori Shinoda

Nobuya Miyoshi

Tatehito Usui

Yutaka Kouzuma

Tomoyuki Tamura

Kunihiko Shibata

Satomi Inoue

Hironobu Kawahara

Takeshi Ohmori

Saburou Kanai

Takahiro Shimomura

Ichiro Sasaki

Hiromichi Kawasaki

Daisuke Satou

Kazuo Yamaguchi

Satoshi Yamashita

Koichi Sugimoto

Makoto Satake

Makoto Miura

Masatoshi Miyake

Tokudai Neda

Yutaka Omoto

Kenji Horiuchi

Masayuki Ichinohe

Makoto Nawata

Yohei Ishii

Ito Asuka

Yasuharu Yokoi

Genji Itoh

Kouichiro Ohara

In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough.

Vacuum processing apparatus

A manufacturing process of a semiconductor device including a SiGe channel can form a Si segregation layer for protecting the SiGe channel without damaging the SiGe channel. A manufacturing method of a semiconductor device includes: a first step for performing plasma processing on a semiconductor substrate having a silicon layer and a silicon germanium layer formed on the silicon layer under a first condition to expose the silicon germanium layer; and a second step for performing plasma processing on the semiconductor substrate under a second condition to segregate silicon on the surface of the exposed silicon germanium layer. The silicon germanium layer or layers lying adjacent to the silicon germanium layer can be etched under the first condition, hydrogen plasma processing is performed under the second condition, and the first step and the second step are executed in series in the same processing chamber of a plasma processing apparatus.

Manufacturing method of a semiconductor device and a plasma processing apparatus

A plasma apparatus of processing a wafer disposed in a processing chamber using plasma includes one window, another window, a light receiving unit, a light source, and an optical branching unit which is disposed between the light source and the other window, branches light emitted by the light source to an optical path toward the processing chamber and an optical path in other direction, and reflects light in the processing chamber from the other window, and a detection unit which detects the light having been emitted from the plasma and received by the light receiving unit using one branched light and other branched and reflected light. The apparatus processes the wafer according to a condition for the processing which is adjusted based on a result of the detection.

Plasma processing apparatus and operation method thereof

A plasma processing apparatus includes a processing chamber to be depressurized in a vacuum vessel with a sidewall made of a transparent or translucent dielectric material, a stage in the processing chamber to mount a wafer thereon, a coil disposed around an outer side of the sidewall and supplied with radio-frequency power for forming plasma above the stage in the processing chamber, a lamp disposed above the coil outside the vacuum vessel which radiates light onto the wafer, and a reflector disposed the coil and reflecting light to irradiate an inside of the processing chamber.

Plasma processing apparatus

A plasma processing apparatus is offered which has evacuable vacuum vessel, processing chamber disposed inside the vacuum vessel and having inside space in which plasma for processing sample to be processed is generated and in which the sample is placed, unit for supplying gas for plasma generation into processing chamber, vacuum evacuation unit for evacuating inside of processing chamber, helical resonator configured of helical resonance coil disposed outside the vacuum vessel and electrically grounded shield disposed outside the coil, RF power supply of variable frequency for supplying RF electric power in given range to the resonance coil, and frequency matching device capable of adjusting frequency of the RF power supply so as to minimize reflected RF power. The resonance coil has electrical length that is set to integral multiple of one wavelength at given frequency. The helical resonance coil has feeding point connected to ground potential using variable capacitive device.

Plasma processing apparatus and plasma processing method

There is a vacuum processing apparatus which can reduce the amount of foreign particle occurrence by enhancing the ease of maintenance of a gas diffuser installing portion in the vacuum processing apparatus. A gas diffuser chamber for accommodating a gas diffuser is installed in the vacuum processing apparatus.

The object of the invention is to provide a plasma processing apparatus having enhanced plasma processing uniformity. The plasma processing apparatus comprises a processing chamber, meansandfor supplying processing gas into the processing chamber, evacuation meansandfor decompressing the processing chamber, an electrodeon which an objectto be processed such as a wafer is placed, and an electromagnetic radiation power supplyA, wherein at least two kinds of processing gases having different composition ratios of Oor Nare introduced into the processing chamber through different gas inlets so as to control the in-plane uniformity of the critical dimension while maintaining the in-plane uniformity of the process depth.

The invention provides a plasma processing apparatus which is based upon a dry etching apparatus and which can inhibit the contamination of a work piece caused by sputtering onto a wall of a vacuum chamber, the occurrence of a foreign matter, the increase of a running cost for replacing the walls of the vacuum chamber and the deterioration of a rate of operation. The plasma processing apparatus according to the invention is based upon the dry etching apparatus having parallel plate structure and is characterized in that a low-pass filter having high impedance to a frequency of a high frequency power source for generating discharge, having small resistance to direct current and grounded is connected to an electrode for generating discharge which is arranged in a position opposite to the work piece and to which the high frequency power source for generating discharge is connected or a low-pass filter having small resistance to direct current and grounded and a direct-current power source connected in series with it are connected to the electrode for generating discharge.

In processing a magnetic film composed for example of Fe, Co or Ni formed on a substrate and a nonvolatile metal containing the same in a vacuum reactor using a plasma generating gas for generating plasma and a gas containing C and O, a power applied to an antenna for generating plasma is time-modulated, wherein the feeding of gas containing C and O to the vacuum reactor is synchronized with the time-modulated antenna power so that the supply of gas containing C and O to the vacuum reactor is suppressed when the antenna power is high and the gas containing C and O is fed to the vacuum reactor when the antenna power is low.

Plasma etching method and plasma etching apparatus

Growing community of inventors

Kudamatsu, Japan

Kenji Maeda