Oki Semiconductor Co., Ltd.

Kenji Komori

Toru Yoshie

The present invention provides a method for manufacturing a semiconductor substrate in which a semiconductor wafer, formed of a material less likely to increase the hole diameter, is processed to a semiconductor substrate actually applicable to an existing manufacture line. An SiC waferis temporarily fixed to a Si waferthrough a wax. The SiC wafertemporarily fixed to the Si waferis overlapped with a Si waferhaving the same hole diameter as the Si waferthrough an SOG filmP. Orientation flatsA andA are aligned, and while the Si wafersandare overlapped with each other, heating is performed under pressure to solidify the SOG filmP, whereby an SOG solidified filmS is formed. With the aid of the SOG solidified filmS, the SiC waferis adhered to the Si wafer. The SiC waferis adhered at a predetermined position of the Si waferfacing the SiC waferso as to be transferred from the Si waferto the Si wafer. The unneeded Si waferis detached, and the waxis then removed.

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Miyazaki, Japan

Kenji Komori