Sumitomo Chemical Company, Limited

Hiroshima University

Kenji Kohiro

Masahiko Hata

Noboru Fukuhara

Tomoyuki Takada

Kazuo Takimiya

Akira Hasegawa

Kazumasa Ueda

Akiko Nakazono

Kenichiro Ohya

Kunihito Miyake

Shinichi Yamate

Itaru Osaka

Takayuki Okachi

To provide an organic semiconductor composition that can exhibit a high carrier transport property and give uniform characteristics. An organic semiconductor composition characterized by containing a high molecular weight compound having a carrier transport property and a low molecular weight compound, in which the low molecular weight compound has a structure represented by Formula (1) and a content ratio of the low molecular weight compound is from 5 to 95 parts by mass relative to a total of 100 parts by mass of the high molecular weight compound and the low molecular weight compound, [where, E represents a sulfur atom or a selenium atom, three E's may be the same or may be different from one another, and an aromatic ring in Formula may have substituents].

Organic semiconductor composition, organic thin film, and organic thin film transistor having same

An object of the present invention is to provide a polymer compound providing high charge mobility. The polymer compound of the present invention has a repeating unit represented by the formula (1): wherein Arand Arare each an aromatic hydrocarbon ring, a heterocycle, or a fused ring of an aromatic hydrocarbon ring and a heterocycle; and R, R, Rand Reach represent a hydrogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, a substituted silyl group, an unsubstituted or substituted carboxyl group, a monovalent heterocyclic group, a cyano group or a fluorine atom.

Polymer compound, and thin film and ink composition each containing same

Disclosed is a method for producing a compound semiconductor epitaxial substrate having a pn junction by selective growth which is characterized by using a base substrate having an average residual strain of not more than 1.0&#xd7;10.

Method for producing compound semiconductor epitaxial substrate having PN junction

An object of the present invention is to provide an organic semiconductor composition capable of forming an organic film having high carrier transportability. A preferable organic semiconductor composition contains a lower molecular weight compound and a higher molecular weight compound having carrier transportability, and the solubility parameter of the higher molecular weight compound and the solubility parameter of the lower molecular weight compound differ by 0.6 to 1.5.

Organic semiconductor composition, organic thin film and organic thin film element provided with organic thin film

A compound semiconductor epitaxial substrate and a process for producing the same are provided. The compound semiconductor epitaxial substrate comprises a single crystal substrate, a lattice mismatch compound semiconductor layer and a stress compensation layer, wherein the lattice mismatch compound semiconductor layer and the stress compensation layer are disposed on the identical surface side of the single crystal substrate, there is no occurrence of lattice relaxation in the lattice mismatch compound semiconductor layer, as well as the stress compensation layer, and Ls representing the lattice constant of the single crystal substrate, Lm representing the lattice constant of the lattice mismatch compound semiconductor layer, and Lc representing the lattice constant of the stress compensation layer satisfy the formula (1a) or (1b).Lm Lm&#x3e;Ls&#x3e;Lc&#x2003;&#x2003;(2a)

Compound semiconductor epitaxial substrate and process for producing the same

A compound semiconductor substrate manufacturing method suitable for manufacturing a compound semiconductor element having high electrical characteristics. The compound semiconductor substrate manufacturing method is a method for manufacturing a compound semiconductor substrate having pn junction, including an epitaxial growing process, a selective growing process and other discretionary processes after the epitaxial growing process. The highest temperatures in the selective growing process and other discretionary processes after the epitaxial growing process are lower than that in the epitaxial growing process prior to the selective growing process.

Method for manufacturing compound semiconductor substrate with pn junction

A method for manufacturing a compound semiconductor epitaxial substrate with few concave defects is provided. The method for manufacturing a compound semiconductor epitaxial substrate comprises a step of epitaxially growing an InGaAs layer on an InP single crystal substrate or on an epitaxial layer lattice-matched to the InP single crystal substrate under conditions of ratio of V/: 10-100, growth temperature: 630&#xb0; C.-700&#xb0; C., and growth rate: 0.6 &#x3bc;m/h-2 &#x3bc;m/h.

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Tsukuba, Japan

Kenji Kohiro