Olympus Optical Company, Ltd.

Mitsubishi Denki Kabushiki Kaisha

Murata Manufacturing Co., Ltd.

Sony Corporation

Kabushiki Kaisha Toshiba

Renesas Electronics Corporation

Sony Mobile Communications Inc.

Nec Electronics Corporation

Kenji Kimura

Kiyoshi Tsuji

Ken Satoh

Toshikazu Kato

Sinichi Saitou

Seizo Watanabe

Hiroki Hibino

Toyoo Nishiyama

Tutomu Shibata

Yasuhiko Ueda

Yasutake Fukuda

Misao Shimoda

Hisao Yabe

Takeaki Nakamura

Kenji Tokutake

Masahide Kanno

Akinobu Uchikubo

Masatoshi Ida

Yutaka Yunoki

Toshikazu Sei

Ken Ohshima

Muneaki Maeno

Jun Yoshinaga

Yuka Jingushi

Tsutomu Shibata

Norihisa Aoki

Yuichiro Kojima

Yoshitsugu Kitada

Hiroshi Kunimatsu

Koji Takamura

Masanori Kojima

Atsushi Kidawara

Masahito Goto

Tsutomu Hirai

Kenji Maeno

Shinichi Kato

Mitsuhiro Ono

Jun Hasegawa

Akira Kato

Takeshi Yokoi

Shinji Yamashita

Masahiko Sasaki

Yoshinori Ishii

Toshio Ito

Masao Uehara

Hiromasa Suzuki

Takehisa Sasabayashi

Hiroshi Kawamura

Shinichi Nishigaki

Masaaki Tanaka

Kazuhiko Kurafuchi

Katsunori Ochi

Kenichi Oinoue

Teruo Miyamoto

Toshimasa Tomoda

Kenji Fukuoka

Toshiyuki Yoneda

Haruhiko Nagai

Toshimasa Akagi

Atsuo Goto

Toshiaki Nishikori

Teruo Eino

Hisao Ogiu

Kenji Samejima

Kazunori Ikegami

Yasuhito Myoi

Yoshihiro Okada

Junichi Nose

Fumio Suzuki

Kazuaki Matoba

Yasuo Komatsu

Kenichi Kikuchi

Yoshikazu Tojo

Soichiro Okuda

Hideki Kaneko

Hitoshi Kurosawa

Masaharu Imai

Naoki Kawamoto

Tatsuo Imamura

Hiroyuki Kuroda

Shunpei Tanaka

Hisao Nakanishi

Yoshiyuki Ishimaru

Takio Okuda

Yoshisuke Ohtsuru

Yasumasa Watanabe

Hisakazu Yamane

Takamasa Hosoya

Masayuki Toshiyasu

Toyomi Ohshige

Toshiro Fujisaki

Kyotaro Mano

Masanori Sato

Miki Fukada

Hisao Koizumi

Naoto Kontani

Kazuhiko Ozeki

Wataru Oshima

Hideo Arahama

Kou Nishino

A power storage device having a positive electrode including a positive electrode current collector and a positive electrode active material layer, a negative electrode including a negative electrode current collector and a negative electrode active material layer, and a separator layer between the positive electrode and the negative electrode and including a gel electrolyte. At least one of the positive electrode active material layer and the negative electrode active material layer includes an electrode active material, an electrolytic solution, a first polymer compound that is not crosslinked, and a binder having a second polymer compound different from the first polymer compound.

Power storage device and method of manufacturing the same

A multilayer electronic component having a plurality of laminated dielectric layers and inner electrode layers. The dielectric layers have a plurality of crystal grains including first regions where Re is dissolved in a solid state; and second regions where Re is not dissolved in the solid state. A median size of the crystal grains to an average thickness of the dielectric layers is 0.5&#x2264;t&#x2264;0.7. A ratio of a sum of cross sectional areas of the first regions to those of the plurality of crystal grains is 0.7&#x2264;s&#x2264;0.9. When a total amount of Ti, Zr, and Hf is 100 molar parts in the dielectric layers, a sum of the Zr and the Hf is 0&#x2264;a&#x2264;1.0; an amount b of Si is 0.1&#x2264;b&#x2264;1.0; an amount c of Re is 0.5&#x2264;c&#x2264;10.0; and a ratio m of a total of Ba and Re to a total of Ti, Zr, and Hf is 0.990&#x2264;m&#x2264;1.050.

Multilayer type electronic component

Power consumption of a semiconductor device is reduced. A semiconductor device according to an embodiment includes a plurality of circuits, a bus circuit including a plurality of buffers that temporarily store communication data between the circuits and a plurality of arbitration circuits that arbitrate an access between the circuits and the buffers, a storage unit that stores information based on a use state of the buffers during communication between the circuits and configuration information including designation of unused circuits that are not used for the communication from among the circuits, and a control circuit that controls the bus circuit so as to stop use of unused buffers that are not used for the communication from among the buffers and at least a partial configuration in arbitration circuits corresponding to the unused circuits from among the arbitration circuits based on the configuration information.

Semiconductor device and reconfiguration control method of the same

A terminal device that includes an operation surface; an input detection unit that detects an indicator and determines at least one of a position of the indicator contacting the operation surface and a distance of the indicator from the operation surface in a vertical direction; an operation determination unit that determines information about an operation input by movement information of the indicator detected by the input detection unit; and a control unit that performs predetermined control when a first operation which is an operation performed to move the indicator in a vertical direction away from the operation surface is detected by the operation determination unit.

Terminal device, information processing method, program, and storage medium

A laminated power storage device that includes a first end portion of a first current collector extends to an inside of an insulating adhesive portion relative to a first polarizable electrode layer, and a second end portion of a second current collector extends to an inside of the insulating adhesive portion relative to a second polarizable electrode layer.

Laminated power storage device

An electrical double layer capacitor having electrolyte-containing layer between a first polarizable electrode layer and a second polarizable electrode layer. An insulating adhesive portion adheres to a first current collector and a second current collector which at least partially face each other with the electrolyte-containing layer interposed therebetween. The insulating adhesive portionextends around the first and second polarizable electrode layers and the electrolyte-containing layer. A thickness of the electrolyte-containing layer is larger than a difference between a thickness of the insulating adhesive portion and thicknesses of the first and second polarizable electrode layers.

Power storage device

An electrical double layer capacitor having an electrolyte-containing layer between a first polarizable electrode layer and a second polarizable electrode layer. An insulating adhesive portion adheres to a first current collector and a second current collector and extends around the first and second polarizable electrode layers and the electrolyte-containing layer. A thickness of the insulating adhesive portion is larger than a sum of thicknesses of the first and second polarizable electrode layers and the electrolyte-containing layer.

The present invention realizes a functional safety of a multiprocessor system without tightly coupling processor elements. When causing a plurality of processor elements to execute the same data processing and realizing a functional safety of the processor element, there is adopted a bus interface unit that performs control of performing safety measure processing when the non-coincidence of access requests issued from the processor elements has been fixed, and of starting access processing responding the access request when these access requests coincide with one another.

Multiprocessor system

Disclosed is a signal output circuit comprising: a first transistor of an emitter follower configuration, which receives an input signal; a second transistor of an emitter follower configuration, which receives the input signal, and has an output connected to an external load (); a comparator circuit which has an input pair connected via resistors to emitters of the first and the second transistors; a first current mirror circuit which has an input connected to an output of a first current source transistor and an output connected to an emitter of the first transistor; and a second current mirror circuit which has an input connected to a connection node of an output of a second current source transistor and an output of the comparator circuit, and has an output connected to an emitter of the second transistor.

Signal output circuit

A semiconductor device has a via-contact, a main wire having an end connected to the via-contact, and an extension extended in line with the main wire from the end of the main wire beyond the via-contact, the width of the extension being equal to or narrower than the width of the main wire. The extension prevents the end of the main wire from being rounded by an optical proximity effect, eliminates a contact defect or an open defect between the via-contact and the end of the main wire, and involves no widening of the main wire around the via-contact, so that other via-contacts may be arranged in the vicinity of the via-contact in question without violating design rules.

Computer-readable recording medium storing semiconductor designing program for improving both integration and connection of via-contact and metal

Semiconductor device, designing method thereof, and recording medium storing semiconductor designing program

Growing community of inventors

Tachikawa, Japan

Kenji Kimura