Sharp Kabushiki Kaisha Corporation

Kenji Kimoto

Naoki Koide

Junichi Nakamura

Yuta Matsumoto

Masamichi Kobayashi

Takeshi Hieda

Hiroshi Iwata

Yoshitaka Yamamoto

Noboru Iwata

Yoshiji Ohta

Masaru Nomura

Yoshifumi Yaoi

Toshihiko Sakai

Tatsuya Ryohwa

Kenji Komiya

Yusuke Sakakibara

Liumin Zou

Chikao Okamoto

Hiroshi Igarashi

A light-emitting element includes a first electrode, a second electrode, a light-emitting layer between the first electrode and the second electrode, and an intervening layer between the first electrode and the light-emitting layer, the intervening layer containing an oxide. The first electrode includes: a first layer adjacent to the intervening layer, the first layer containing atoms of a first metal element; and a second layer containing atoms of a second metal element, the first layer and the second layer are stacked in a stated order when viewed from the light-emitting layer, and the second metal element is more susceptible to oxidation than the first metal element.

Light-emitting element, light-emitting device, and display device

A light-emitting element includes a first electrode, a second electrode, a light-emitting layer, a hole injection layer provided between the first electrode and the light-emitting layer, and a hole transport layer provided between the hole injection layer and the light-emitting layer, wherein an insulator layer is provided between the hole injection layer and the hole transport layer. The hole injection layer, the insulator layer, and the hole transport layer each include a compound including one or more types of a cation and one or more types of an anion, the anion includes a group 15 or group 16 element of the periodic table, and an average oxidation number of cations in the insulator layer is greater than an average oxidation number of cations in the hole transport layer and less than an average oxidation number of cations in the hole injection layer.

Light emitting element, light emitting device, and display device

A light-emitting element includes: a first electrode which is an anode, a hole transport layer, a light-emitting layer, an electron transport layer, and a second electrode which is a cathode in this order; and an oxide layer which is a first oxide layer and an oxide layer which is a second oxide layer disposed in this order from the first electrode side between the hole transport layer and the light-emitting layer or between the light-emitting layer and the electron transport layer, wherein a density of oxygen atoms in the second oxide layer is different from a density of oxygen atoms in the first oxide layer.

Light-emitting element

In an element provided with a QD layer including QD phosphor particles, a first hole transport layer located between a first electrode and the QD layer is formed of a continuous film of a first carrier transport material. A second hole transport layer located between the first hole transport layer and the QD layer includes nanoparticles formed of a second carrier transport material.

Element and electronic device having a mixed layer of quantum dots and nanoparticles

A light-emitting element includes: a first electrode serving as an anode; a second electrode serving as a cathode; a light-emitting layer, of a first wavelength range, provided between the first electrode and the second electrode; an oxide layer provided between the light-emitting layer of the first wavelength range and the first electrode of the first electrode and the second electrode; and an oxide layer provided between the oxide layer and the second electrode, and having contact with the oxide layer. Either the oxide layer or the oxide layer whichever farther away from the light-emitting layer of the first wavelength range is made of a semiconductor. A density of oxygen atoms in the oxide layer is lower than a density of oxygen atoms in the oxide layer.

Light-emitting element and light-emitting device

A light-emitting element () includes: an anode (); a hole transport layer (); a light-emitting layer () containing quantum dots (); an electron transport layer (); and a cathode (), arranged in this order, the light-emitting element further including a charge blocking layer () either between the light-emitting layer and the hole transport layer or between the light-emitting layer and the electron transport layer or both, wherein the charge blocking layer contains, as an element: a transition metal element that is a component of an oxide semiconductor; at least one selected from Al, Mg, and Si; and O.

An element includes an electron transportation layer containing nanoparticles, a QD layer containing QD phosphor particles, and a mixed layer sandwiched between the electron transportation layer and the QD layer to be adjacent to these layers. The mixed layer contains QD phosphor particles and nanoparticles.

Element, electronic device, and method for producing element

For a purpose of simplifying a structure of a light-emitting element while maintaining luminous efficiency of the light-emitting element, the present invention provides a light-emitting element including: a cathode electrode; an anode electrode; a light-emitting layer between the cathode electrode and the anode electrode; an electron transport layer between the light-emitting layer and the cathode electrode; and a hole transport layer between the light-emitting layer and the anode electrode. The light-emitting element further includes a plurality of subpixels for each light emission wavelength of the light-emitting layer, the light-emitting layer and the electron transport layer for each of the plurality of subpixels, and the hole transport layer common to at least the plurality of subpixels.

Light-emitting element having commonly formed hole transport layer and anode electrode and light-emitting device

There is provided a photoelectric conversion device which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline silicon layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a silicon substrate (), a first non-crystalline semiconductor layer (), a second non-crystalline semiconductor layer (), a first electrode (), and a second electrode (). One electrode () includes first conductive layers (), and second conductive layers (). The first conductive layers () have a first metal as a main component. The second conductive layers () contain a second metal which is more likely to be oxidized than the first metal, are formed to be in contact with the first conductive layers (), and are disposed to be closer to the silicon substrate () than the first conductive layers ().

Photoelectric conversion device

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a semiconductor substrate (), a first semiconductor layer (), a second semiconductor layer (), a first electrode (), and a second electrode (). The first semiconductor layer () has a first conductive type. The second semiconductor layer () has a second conductive type opposite to the first conductive type. The first electrode () is formed on the first semiconductor layer (). The second electrode () is formed on the second semiconductor layer (). At least one electrode of the first electrode () and the second electrode () includes a plurality of metal crystal grains. The average crystal grain size of the metal crystal grains in the in-surface direction of electrode is greater than the thickness of the electrode.

Photoelectric conversion element, photoelectric conversion module, and solar photovoltaic power generation system

There is provided a photoelectric conversion element which can prevent the contact resistance between a non-crystalline semiconductor layer containing impurities and an electrode formed on the non-crystalline semiconductor layer from increasing, and can improve the element characteristics. A photoelectric conversion element () includes a semiconductor substrate (), a first semiconductor layer (), a second semiconductor layer (), a first electrode (), and a second electrode (). The first semiconductor layer has a first conductive type. The second semiconductor layer has a second conductive type. The first electrode is formed on the first semiconductor layer. The second electrode is formed on the second semiconductor layer. The first electrode includes a first transparent conductive layer () formed on the first semiconductor layer, and a first metal layer () formed on the first transparent conductive layer. The first metal layer includes a plurality of metal crystal grains in which the average crystal grain size in the in-surface direction of the first metal layer is greater than the thickness of the first metal layer.

A photovoltaic element includes: a semiconductor substrate; a first i-type semiconductor film provided on a part of one of surfaces of the semiconductor substrate; a first semiconductor region including a first-conductivity-type semiconductor film provided on the first i-type semiconductor film; a first electrode layer provided on the first semiconductor region; a first conductive film interposed at least at a site between the first semiconductor region and the first electrode layer.

Photovoltaic element

A photoelectric conversion element includes a semiconductor, an intrinsic layer disposed on the semiconductor and containing hydrogenated amorphous silicon, a first-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a first conductivity type, a second-conductivity-type layer that covers a part of the intrinsic layer and contains hydrogenated amorphous silicon of a second conductivity type, an insulating film covering an end region of the first-conductivity-type layer, a first electrode disposed on the first-conductivity-type layer, and a second electrode disposed on the second-conductivity-type layer. An end portion of the second-conductivity-type layer is located on the insulating film or above the insulating film.

Photoelectric conversion element

A photoelectric conversion element includes an intrinsic layer that is disposed on a semiconductor of a first conductivity type and contains hydrogenated amorphous silicon; and a first-conductivity-type layer containing hydrogenated amorphous silicon of the first conductivity type, a second-conductivity-type layer containing hydrogenated amorphous silicon of a second conductivity type, and an insulating layer, each of which covers a part of the intrinsic layer. A first electrode is disposed on the first-conductivity-type layer with the second-conductivity-type layer therebetween. At least a part of the first electrode is located above a region where the first-conductivity-type layer contacts the intrinsic layer, and at least a part of the second electrode is located above a region where the second-conductivity-type layer contacts the intrinsic layer.

The photoelectric conversion element includes a semiconductor substrate, a first amorphous film of a first conductivity type disposed on an entire surface of one surface of the semiconductor substrate, a first conductive oxide layer disposed on the first amorphous film, a second amorphous film of the first conductivity type disposed on a part of the other surface of the semiconductor substrate, a second conductive oxide layer disposed on the second amorphous film, a third amorphous film of a second conductivity type disposed on the other part of the other surface of the semiconductor substrate, and a third conductive oxide layer disposed on the third amorphous film. Electric conductivity of the first conductive oxide layer is lower than electric conductivities of the second and the third conductive oxide layer. Transmittance of the first conductive oxide layer is higher than transmittances of the second and the third conductive oxide layer.

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Osaka, Japan

Kenji Kimoto