Kabushiki Kaisha Toshiba

Canon Kabushiki Kaisha

Alps Electric Co., Ltd.

Alps Alpine Co., Ltd.

Mitsubishi Denki Kabushiki Kaisha

Hitachi Building Systems Engineering and Service Co., Ltd.

Ohtsuka Patent Office

Kenji Kawano

Shinichi Ito

Kei Hayasaki

Yoshifumi Hattori

Hideo Saikawa

Koichi Tanno

Masashi Kitani

Kenji Aono

Masami Kojima

Etsurou Suzuki

Soichi Inoue

Satoshi Tanaka

Eishi Shiobara

Seiji Iida

Takayuki Iwamatsu

Tsukasa Uehara

Koji Hashimoto

Masamitsu Itoh

Hiroyuki Sato

Daisuke Kawamura

Katsuya Okumura

Hiromitsu Hirabayashi

Kazuya Fukuhara

Tsuyoshi Shibata

Makoto Sekita

Hiroaki Hazama

Yoshio Uchikata

Tadashi Hanabusa

Tetsuyo Ohashi

Toshihiko Bekki

Toshihide Wada

Iwao Higashikawa

Tomoyuki Takeishi

Yoji Ara

Masaharu Ikado

Takashi Kamo

Hideya Miyazaki

Hiroshi Ikegami

Riichiro Takahashi

Hajime Osako

Hiroshi Yamazaki

Keiji Horioka

Ikuo Yoneda

Tadahito Fujisawa

Tatsuhiko Higashiki

Kenji Chiba

Ichiro Mori

Hideki Kanai

Kazuyuki Masukawa

Tatsuhiko Ema

Satoshi Nagai

Kazuto Ariga

Hajime Okamoto

Etsuro Suzuki

Masaaki Tanaka

Hironori Takeda

Fumihito Nikami

Satoru Inomata

Kazunobu Onodera

Kazuma Takeo

Shinichiro Kawano

Hisanori Fukai

Katsuhiko Heida

A capacitive sensor device for use with a steering wheel is provided. The steering wheel includes a rim and a spoke that is connected to the inner side of the rim, and the sensor device is provided on the spoke. The sensor device includes an electrode configured to be capacitively coupleable to an object to be detected, and includes a controller configured to detect a change in capacitance of the electrode, and determine whether the object is in proximity to the rim or the spoke based on the change in the capacitance of the electrode. The change in the capacitance occurs in response to the object being in proximity to the rim or the spoke.

Sensor device and steering wheel

A switch device includes a substrate having one surface and another surface; a switch disposed on the one surface of the substrate and configured to be pressed; a first housing; a second housing; and a pin member. An internal space is formed by the first housing and the second housing, and the substrate is disposed in the internal space. The first housing has an opening through which at least a part of the pin member is inserted into the internal space. The second housing includes a support portion that supports the another surface of the substrate. When the pin member is inserted into the internal space through the opening, the pin member presses the support portion against the another surface of the substrate so as to cause the support portion to support the another surface of the substrate.

Switch device

A switching device has a substrate having a fixed contact portion, a slider, a first moving member having an inclined portion and a first engagement portion and being reciprocable on a first imaginary axis line, a first biasing member, a second moving member having a contact portion and a second engagement portion and being reciprocable on a second imaginary axis line, and a second biasing member biasing the second moving member, in which the first and second moving members are supported to be reciprocable in a state of bringing the inclined portion and the contact portion into sliding contact with each other, the slider comes into contact with and is separated from the fixed contact portion according to the reciprocation of the first moving member, and the first and second moving members are connected by the first engagement portion and the second engagement portion so as to be reciprocable.

Switching device

An operation device includes three contact circuits each including fixed terminals and a slider as a movable contact for selectively changing a state between the fixed terminals to an ON/OFF state, a determination unit to which the contact circuits are connected, and an operation signal generation unit that outputs a signal indicating that an operation unit is in a state of ON operation. In response to an ON operation, the slider moves from an initial position where all contact circuits are in an OFF state to an end position where all contact circuits are turned on. Assuming that one of the contact circuits is a reference contact circuit and the others are output contact circuits, the reference contact circuit is provided such that a distance from the initial position to a position where the reference contact circuit is turned on is smaller than that for the output contact circuits.

Operation device

A pattern forming method is disclosed, which comprises forming a photo resist film on a substrate, irradiating the photo resist film with an energy ray to form a desired latent image pattern, placing the substrate on a spacer provided on a hot plate, heating the photo resist film by using the hot plate, and developing the photo resist film to form a photo resist pattern, wherein an amount of irradiation of the energy ray is set such that the amount of irradiation of the energy ray in an exposure region in which a distance between a back surface of the substrate and an upper surface of the hot plate is long is larger than the amount of irradiation of the energy ray in an exposure region in which a distance between the back surface of the substrate and the upper surface of the hot plate is short.

Pattern forming method and a semiconductor device manufacturing method

A photomask unit includes a mask substrate having patterns arranged at a pitch P; and a pellicle which protects the mask substrate, wherein the pellicle is configured so that transmittance of incident light of an incident angle &#x3b8; (0&#xb0;&#x3c;&#x3b8;&#x3c;90&#xb0;) is higher than transmittance of incident light of an incident angle 0&#xb0;.

Photomask unit, exposing method and method for manufacturing semiconductor device

A processing method for selectively reducing or removing the region to be exposed with energy ray in a film formed on a substrate, comprising relatively scanning a first exposure light whose shape on the substrate is smaller than the whole first region to be exposed against the whole first region to be exposed to selectively remove or reduce the first region to be exposed, and exposing a whole second region to be exposed inside the whole first region to be exposed with a second exposure light to selectively expose the whole second region to be exposed.

Processing method, manufacturing method of semiconductor device, and processing apparatus

A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

Apparatus for processing substrate and method of processing the same

An exposure method includes preparing a photomask having first and second main openings by which corresponding patterns are to be formed in a photo resist and first and second assist openings by which no corresponding patterns are to be formed in the photo resist, preparing an illumination having first and second light emitting areas, and irradiating the photo resist with illumination light from the illumination via the photomask, the first light emitting area and the second light emitting area being symmetric with respect to a center of the illumination, the first light emitting area and the second light emitting area containing a first point and a second point, respectively, the first point and the second point being symmetric with respect to the center of the illumination, the first point and the second point being symmetric with respect to a straight line extending through the center of the illumination.

Exposure method and method for manufacturing semiconductor device

A pattern forming method comprises forming a photosensitive resin film on a substrate, exposing the photosensitive resin film, forming a pattern of the photosensitive resin film by supplying a developing solution to the photosensitive resin film, and slimming to remove a surface layer of the pattern by causing the pattern to contact with an activated water.

Method for forming a pattern and substrate-processing apparatus

A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.

Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product

A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

Method of processing a substrate, heating apparatus, and method of forming a pattern

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Tokyo, Japan

Kenji Kawano