Matsushita Electric Industrial Co., Ltd.

Takeda Chemical Industries, Inc.

Kenji Kawakita

Akira Morimoto

Michihiko Ochiai

Yoshihiro Matsushita

Taiiti Okada

Osami Aki

Noboru Nomura

Kazuhiko Hashimoto

Taichi Koizumi

Toyoki Takemoto

Hiroyuki Sakai

Akio Misaka

Tsutomu Fujita

Kenji Harafuji

Osamu Aki

Hiromitsu Hamaguchi

Atsuko Akiyama

Provided is a process for preparing a cephem compound of the formula: ##STR1## wherein R.sup.3 is hydrogen or methoxy, R.sup.4 is hydrogen or a residue of a nucleophilic compound, R.sup.5 is hydroxyl or a protected hydroxyl, and R.sup.8 is hydrogen or halogen, or a pharmaceutically acceptable salt or ester thereof, which comprises introducing an acyl group of the formula: ##STR2## wherein R.sup.5 and R.sup.8 are as defined above into the amino group of the molecule of the formula: ##STR3## wherein R.sup.3 and R.sup.4 are as defined above or a salt or ester thereof.

Methods for the manufacture of cephems

Herein is provided a fine pattern forming method which is prevented from the charging-up phenomenon at the time of electric charged beam writing owing to the use of a polyalkylthiophene type conductive polymeric substance or a quaternary ammonium ion type polymeric substance in a monolayer or multilayer resist.

Fine pattern forming material and pattern forming method

A method of correcting design patterns in cells, having hierarchial structure and corresponding to exposure patterns, for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light. A first frame zone is provided having a predetermined width inside the boundary of each cell, and a second frame zone is provided having a predetermined width inside the first frame zone. Proximity effect correction operations are performed such that a pattern in the second frame zone and a pattern inside the second frame zone are used as a pattern to be corrected and a pattern in the first frame zone is used as a reference pattern when correcting pattern data in each cell for proximity effects and a pattern in the first frame zone in each cell is added to the pattern to be corrected and a pattern in the second frame zone in each cell is used as a reference pattern when correcting pattern data in a cell directly overlying each cell for proximity effect.

Method and apparatus for writing a pattern on a semiconductor sample

The present invention provides a method of forming a fine pattern comprising the steps of forming on a semiconductor substrate an organic polymer film and heat treating it, forming on the organic polymer film an inorganic film and heat treating it, forming on the inorganic film an electron beam resist film and heat treating it, drawing a pattern on the resist film, developing it to form a resist pattern, and etching the inorganic film and the organic polymer film using the resist pattern as a mask, wherein the improvement comprises using one substance selected from the group consisting of a polyphenylene sulfide, a derivative thereof, and a polymer represented by the formula (I): ##STR1## where n is a positive integer, for forming at least one of the organic polymer film and the electron beam resist film. According to the present invention, it is possible to prevent charging by incident electrons, thereby keeping free of field butting and reduction of overlay accuracy, and to form an accurate and vertical fine resist pattern.

Fine pattern forming method

A process for forming a fine pattern comprising the steps of forming an organic polymer film on a semiconductor substrate followed by heat treatment, applying a resist film consisting of a cyclocarbosilane represented by the general formula (I): ##STR1## where R.sub.1, R.sub.2, R.sub.3 and R.sub.4 are each hydrogen or an alkyl group, a polymer resin, and a photo acid generator, on the organic polymer film followed by heat treatment, exposing to an electric charged beam, forming a resist pattern by developing, and etching the organic polymer film while using the resist pattern as a mask. According to the present invention, a dry etching resistant precise fine resist pattern can be formed with high sensitivity.

Process for producing fine patterns using cyclocarbosilane

Provided is a method for forming fine pattern free from shear of pattern caused by charging and high in dry etch resistance by using a high molecular organic film containing an organometallic complex or a metallic salt in single-layer or multi-layer resist process and treating the surface of this film with a reducing agent to form a metallic layer on the surface.

In formation of a fine pattern with direct electron beam delineation, disclosed is a method of obtaining parameters on an electron scattering intensity distribution expressed with a double Gaussian distribution obtained when exposing a resist with an electron beam. A resist on a substrate is exposed with an electron beam in accordance with an evaluation pattern which comprises a plurality of basic checked patterns each comprising longitudinal and lateral exposed stripes. The basic checked patterns are successively arranged longitudinally and laterally at predetermined intervals on a plane so as to form a plurality of longitudinal pattern rows and lateral pattern rows, widths of the stripes of the basic checked patterns in each of the lateral pattern rows being successively changed so as to be different from each other. The exposure doses for the basic checked patterns in each of the longitudinal pattern rows are successively changed so as to be different at every basic checked pattern, thereby obtaining, as a critical exposure dose, the minimum exposure dose in each of the longitudinal pattern rows on the basis of removed or remaining states of the non-exposed portions of the basic checked patterns to obtain the respective parameters.

Electron beam exposure evaluation method

A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure, by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.

Broad spectrum antibiotics are provided which are compounds of the formula: ##STR1## wherein R.sup.4 is a residue of a nucleophilic compound and R.sup.5 is hydroxyl or protected hydroxyl; or a pharmaceutically acceptable salt or ester thereof.

Cephem compounds

A fine pattern forming method capable of forming an accurate fine pattern without charge-up at the time of electron beam or focus ion beam exposure is provided by treating the bottom layer or intermediate layer or silicon containing resist of a multi-layer resist with ion shower irradiation or reducing solvent.

Method of reducing proximity effect in electron beam resists

Broad spectrum antibiotics are provided which are compounds of the formula: ##STR1## wherein -W-R is a residue of a nucleophilic compound and R.sup.5 is hydroxyl or protected hydroxyl, or a pharmaceutically acceptable salt or 4-carboxy ester which is the alkoxymethyl, .alpha.-alkoxyethyl, .alpha.-alkoxy-.alpha.-substituted methyl, alkylthiomethyl, acyloxymethyl or .alpha.-acyloxy-.alpha.-substituted methyl ester thereof.

A method of manufacturing a semiconductor integrated circuit device of the bipolar type of the MOS type or an integration of the two types having high integration and high performance, in which the circuit includes a first device region of which the side surface and entire region of the lower portion of the active region are made of silicon oxide and a second device region of which the side surface and a part of the lower portion of the active region are made of silicon oxide. According to the present invention, a transistor whose bottom portion is opened and a transistor whose bottom portion is not opened can be freely provided on a substrate, thereby dividing the transistors into a transistor to which a voltage can be supplied from the substrate and a transistor to which the voltage can not be supplied from the substrate, so that the wiring which has been conventionally needed can be reduced. In addition, in such transistors which are completely separated, the parasitic effect with the circumference is completely prevented so that excellent characteristics can be provided.

Method of manufacturing a semiconductor integrated circuit device

Disclosed is a method of isolating a transistor perfectly by employing a selective oxidation technology (LOCOS technology). More particularly, vertical openings are formed in the surface of {100} silicon substrate, and oxidation resistant films are formed of this surface and in part of the side walls of these openings. In succession, by etching with an etchant having an orientation anisotropy, dents are formed at high precision in the side walls of the openings. By oxidizing using the oxidation resistant film as the mask, an oxide film growing out from a dent in the opening side wall is connected with another oxide film growing out from an adjacent dent. The transistor thus formed in the active region of the silicon electrically isolated from the substrate is small in parasitic capacitance and may be formed into a small size, so that it possesses the features suited to VLSI, that is, high speed, low power consumption, and processability to high density integration.

Method of manufacturing isolated semiconductor devices

Novel cephem compounds of the formula: ##STR1## wherein R.sup.4 is a residue of a nucleophilic compound selected from hydroxyl, mercapto, cyano, azido, amino, carbamoyloxy, carbamoylthio and thiocarbamoyloxy, said group being unsubstituted or substituted by alkyl of up to three carbons, and R.sup.5 is hydroxyl or lower alkoxy, or a pharmaceutically acceptable ester thereof, have strong antibiotic properties against a wide variety of microorganisms.

Thiazolylacetamido cephalosporin compounds

Semiconductor device, such as bipolar transistor, is made by molecular beam epitaxy, wherein a emitter layer (27) and overriding contact regions (28) of polycrystalline silicon are grown continuously on a silicon substrate (23+26) without breaking high vacuum, thus eliminating the adverse interface of natural oxide film under the polycrystalline silicon layer (28) and the adverse donor-acceptor compensation while attaining a well controlled h.sub.FE and enabling a shallow emitter junction.

Growing community of inventors

Osaka, Japan

Kenji Kawakita