Nissin Electric Co., Ltd.

Emd Corporation

Kenji Kato

Eiji Takahashi

Yuichi Setsuhara

Takashi Mikami

Tsukasa Hayashi

Atsushi Tomyo

Kiyoshi Ogata

Akinori Ebe

Hiroshige Deguchi

Shigeaki Kishida

Kiyoshi Kubota

Hitoshi Yoneda

There are provided a method and an apparatus which form silicon dots having substantially uniform particle diameters and exhibiting a substantially uniform density distribution directly on a substrate at a low temperature. A hydrogen gas (or a hydrogen gas and a silane-containing gas) is supplied into a vacuum chamber () provided with a silicon sputter target (e.g., target), or the hydrogen gas and the silane-containing gas are supplied into the chamber () without arranging the silicon sputter target therein, a high-frequency power is applied to the gas(es) so that plasma is generated such that a ratio (Si(288 nm)/H&#x3b2;) between an emission intensity Si(288 nm) of silicon atoms at a wavelength of 288 nm and an emission intensity H&#x3b2; of hydrogen atoms at a wavelength of 484 nm in plasma emission is 10.0 or lower, and preferably 3.0 or lower, or 0.5 or lower, and silicon dots (SiD) having particle diameters of 20 nm or lower, or 10 nm or lower are formed directly on the substrate (S) at a low temperature of 500 deg. C. or lower in the plasma (and with chemical sputtering if a silicon sputter target is present).

Silicon dot forming method and silicon dot forming apparatus

A silicon object formation target substrate is arranged in a first chamber, a silicon sputter target is arranged in a second chamber communicated with the first chamber, plasma for chemical sputtering is formed from a hydrogen gas in the second chamber, chemical sputtering is effected on the silicon sputter target with the plasma thus formed, producing particles contributing to formation of silicon object, whereby a silicon object is formed, on the substrate, from the particles moved from the second chamber to the first chamber.

Silicon object forming method and apparatus

Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.

Plasma producing method and apparatus as well as plasma processing apparatus

Growing community of inventors

Kyoto, Japan

Kenji Kato