Semiconductor Energy Laboratory Co., Ltd.

Kenji Itou

Shunpei Yamazaki

Toshiji Hamatani

Takashi Inushima

Shinji Imatou

Mitsunori Tsuchiya

Kazuhisa Nakashita

Atsushi Kawano

Shigenori Hayashi

Masaya Kadono

Noriya Ishida

Junichi Takeyama

Mari Sasaki

Masahiro Kojima

A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

Plasma processing method and apparatus

Carbonaceous films are coated on a surface by chemical vapor reation. In advance of the deposition of carbonaceous film, a silicon nitride film as coated on the surface to prevent interdiffusion between the carbonaceous film and the underlying surface.

Plasma processing method and products thereof

A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

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Zama, Japan

Kenji Itou