Denso Corporation

Kenji Itoh

Shinichi Hoshi

Yoshinori Tsuchiya

Masaki Matsui

Shigenobu Nakamura

Tsutomu Uesugi

Tetsu Kachi

Kazuyoshi Tomita

Tetsuo Narita

Hiroyuki Tarumi

Masahito Kodama

Toshiki Hitomi

A semiconductor device includes a switching device having: a substrate configured by a semi-insulating material or a semiconductor; a channel forming layer on the substrate that is configured by a compound semiconductor mainly having a group III nitride; a gate structure configured by a gate electrode on the channel forming layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode on the channel forming layer at both sides of the gate structure respectively, a collapse inhibiting layer on the channel forming layer in an element region of the channel forming layer where the switching device is arranged that is configured by an insulating material; and a leakage inhibiting layer on the channel forming layer in an element isolation region of the channel forming layer surrounding the element region that is configured by an insulating material different from that of the collapse inhibiting layer.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a GaN device provided with: a substrate made of a semi-insulating material or a semiconductor; a channel-forming layer including a GaN layer arranged on the substrate; a gate structure in which a gate-insulating film in contact with the GaN layer is arranged on the channel-forming layer, the gate structure having a gate electrode arranged across the gate-insulating film; and a source electrode and a drain electrode that are arranged on the channel-forming layer and on opposite sides interposing the gate structure. The donor element concentration at the interface between the gate-insulating film and the GaN layer and at the lattice position on the GaN layer side with respect to the interface is set to be less than or equal to 5.0&#xd7;10cm.

Semiconductor device and method for producing same

In a semiconductor device, a gate insulating film is provided with a multi-layer structure including a first insulating film and a second insulating film. The first insulating film is formed of an insulating film containing an element having an oxygen binding force larger than that of an element contained in the second insulating film, and the total charge amount is increased. Specifically, by performing oxygen anneal, it is possible to perform the step of supplying oxygen into an aluminum oxide film and increase the total charge amount. This allows a negative fixed charge density in the gate insulating film in the vicinity of an interface with a GaN layer to be set to a value of not less than 2.5&#xd7;10cmand allows a normally-off element to be reliably provided.

Semiconductor device and method for manufacturing the same

A rotor for an automotive alternator includes a rotary shaft, first and second magnetic pole cores each having a plurality of magnetic pole claws, a bobbin, a field coil, a plurality of permanent magnets, and a positioning mechanism. The magnetic pole claws of the first magnetic pole core are interleaved with those of the second magnetic pole core. The field coil is wound around the first and second magnetic pole cores via the bobbin. The permanent magnets are interposed between the first and second magnetic pole cores. The positioning mechanism, which is made up of at least one of the rotary shaft, the first and second magnetic pole cores, and the bobbin, functions to position the first and second magnetic pole cores in the circumferential direction of the rotary shaft with intervals between adjacent pairs of the magnetic pole claws of the first and second magnetic pole cores being even.

Rotor for automotive alternator having mechanism for positioning magnetic pole cores

Growing community of inventors

Nagakute, Japan

Kenji Itoh