University of California

Japan Pionics Co., Ltd.

Kenji Iso

Shuji Nakamura

Steven P DenBaars

Hisashi Yamada

Makoto Saito

James Stephen Speck

Asako Hirai

Zhongyuan Jia

Hitoshi Sato

Hirokuni Asamizu

Hisashi Masui

Yoshiyasu Ishihama

Ryohei Takaki

Yuzuru Takahashi

A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an a-axis direction comprising a 0.15&#xb0; or greater miscut angle towards the a-axis direction and a less than 30&#xb0; miscut angle towards the a-axis direction.

Planar nonpolar group-III nitride films grown on miscut substrates

A nonpolar III-nitride film grown on a miscut angle of a substrate, in order to suppress the surface undulations, is provided. The surface morphology of the film is improved with a miscut angle towards an &#x3b1;-axis direction comprising a 0.15&#xb0; or greater miscut angle towards the &#x3b1;-axis direction and a less than 30&#xb0; miscut angle towards the &#x3b1;-axis direction.

[Problem] Provided is a vapor phase epitaxy apparatus of a group III nitride semiconductor including: a susceptor for holding a substrate; the opposite face of the susceptor; a heater for heating the substrate; a reactor formed of a gap between the susceptor and the opposite face of the susceptor; a raw material gas-introducing portion for supplying a raw material gases from the central portion of the reactor toward the peripheral portion of the reactor; and a reacted gas-discharging portion. Even when crystal growth is conducted on the surfaces of a large number of large-aperture substrates, the vapor phase epitaxy apparatus can eject each raw material gas at an equal flow rate for any angle, and can suppress the decomposition and crystallization of the raw material gases on the opposite face of the susceptor. [Solving Means] The vapor phase epitaxy apparatus is such that: the opposite face of the susceptor has means for flowing a coolant therein; the raw material gas-introducing portion has a plurality of gas ejection orifices formed of such a constitution that the gas ejection orifices are partitioned in a vertical direction with a disk-like partition; and at least one of the gas ejection orifices has such a constitution that the gas ejection orifice is partitioned in a circumferential direction with a plurality of columnar partitions.

Vapor phase epitaxy apparatus of group III nitride semiconductor

A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.

Nonpolar III-nitride light emitting diodes with long wavelength emission

An (Al,Ga,In)N-based light emitting diode (LED), comprising a p-type surface of the LED bonded with a transparent submount material to increase light extraction at the p-type surface, wherein the LED is a substrateless membrane.

Light emitting diodes with a p-type surface bonded to a transparent submount to increase light extraction efficiency

An off-axis cut of a nonpolar III-nitride wafer towards a polar (&#x2212;c) orientation results in higher polarization ratios for light emission than wafers without such off-axis cuts. A 5&#xb0; angle for an off-axis cut has been confirmed to provide the highest polarization ratio (0.9) than any other examined angles for off-axis cuts between 0&#xb0; and 27&#xb0;.

Enhancement of optical polarization of nitride light-emitting diodes by wafer off-axis cut

Planar nonpolar m-plane group III nitride films grown on miscut substrates

Light emitting diodes with a P-type surface bonded to a transparent submount to increase light extraction efficiency

An increase in the Indium (In) content in light-emitting layers of light-emitting diode (LED) structures prepared on nonpolar III-nitride substrates result in higher polarization ratios for light emission than LED structures containing lesser In content. Polarization ratios should be higher than 0.7 at wavelengths longer than 470 nm.

Growing community of inventors

Kanagawa, Japan

Kenji Iso