Kyocera Corporation

Honda Giken Kogyo Kabushiki Kaisha

Hitachi Metals, Ltd.

Neomax Materials Co., Ltd.

Kenji Ikeuchi

Yasuhiro Nakamura

Takashi Inoue

Hiroshi Yoshida

Noriyasu Kawakita

Tomoya Shimomura

Kazuhide Toda

Yusuke Kishina

Masaaki Ishio

Yoshimitsu Oda

Akio Hashimoto

Masayuki Narita

Masashi Fujita

Yasuyuki Hama

Makoto Takahashi

A power management system including a management apparatus configured to assign divided computation processing constituting at least a part of predetermined computation processing to a distributed computing device placed in a facility, wherein the management apparatus includes a receiver configured to receive a message including an information element indicating a type of a power source configured to identify electrical power allowed as electrical power to be used by the distributed computing device, and a controller configured to perform assignment processing to assign the divided computation processing to the distributed computing device based on the type of the power source.

Power management system and power management method

A power management system including a management apparatus configured to assign divided computation processing constituting at least a part of predetermined computation processing to a distributed computing device placed in a facility, wherein the management apparatus includes a receiver configured to receive a message including an information element indicating executability of computation processing by the distributed computing device, and a controller configured to perform assignment processing configured to assign the divided computation processing to the distributed computing device based on the executability of the computation processing.

A power management system including a management apparatus configured to assign divided computation processing constituting at least a part of predetermined computation processing to a distributed computing device placed in a facility, wherein the management apparatus includes a receiver configured to receive a message including an information element indicating a type of corresponding computation processing that the distributed computing device is capable of handling, and a controller configured to perform assignment processing to assign the divided computation processing to the distributed computing device based on the type of the corresponding computation processing.

A power management system including a management apparatus configured to assign divided computation processing constituting at least a part of predetermined computation processing to a distributed computing device placed in a facility, wherein the management apparatus includes a controller configured to perform assignment processing configured to assign the divided computation processing to the distributed computing device based on at least one of a prediction value of an output power of a distributed power supply placed in the facility, a prediction value of power consumption of the facility, and a prediction value of a surplus power of the facility.

An aluminum copper clad material has excellent bonding strength and includes an aluminum layer and a copper layer that are bonded without a nickel layer interposed therebetween. The aluminum layer and the copper layer are diffusion-bonded via an Al&#x2014;Cu intermetallic compound layer. The copper layer satisfies Dcs&#x2266;0.5&#xd7;Dcc, where Dcc represents the average crystal grain size of crystal grains in a central portion in the thickness direction of the copper layer, and Dcs represents the average crystal grain size of an interface adjacent portion Cin the copper layer that is about 0.5 &#x3bc;m apart from the interface between the copper layer and the intermetallic compound layer. The intermetallic compound layer has an average thickness of about 0.5 &#x3bc;m to about 10 &#x3bc;m.

Aluminum copper clad material

A joined structure has high strength, which is used for manufacturing a joint made from different metal materials. In the joined structure in which the different metal materials are joined, a reaction product layer to be generated on the joined interface is set to have a thickness of 0.5 &mgr;m or less. Moreover, the reaction product layer is allowed to intermittently exist on the joined interface. Furthermore, the reaction product layer contains a base material crystal consisting of base material atoms of 90 atom % or more on the joined interface.

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Kyoto, Japan

Kenji Ikeuchi