Sanyo Electric Co., Ltd.

Taiyo Yuden Co., Ltd.

Kenji Ikeda

Masayuki Fujimoto

Kazuyoshi Kobayashi

Tadao Mandai

Takaaki Saito

Madoka Nishikawa

Atsuya Ushida

Kazuhiko Takeno

Yasuhiro Asano

Mitsuho Tsuchida

One inventive aspect relates to a high-frequency magnetic thin film capable of working in a GHz-level band, and an electronic device comprising the film. The film comprises a magnetic layer and an insulating layer that are laminated alternately. The magnetic layer includes a first magnetic layer and a second magnetic layer. The first magnetic layer has a higher anisotropic magnetic field than the second magnetic layer, and the second magnetic layer has a higher saturation magnetization than the first magnetic layer.

High-frequency magnetic thin film and high-frequency electronic device

There are provided a magnetic thin film utilizing a granular film and having excellent high frequency characteristics and a method of manufacturing the same, and a multilayered magnetic film and magnetic components and electronic equipment utilizing the same. A nonreactive sputtering is performed so that there is no oxidation of a magnetic metal, and a saturation magnetization is increased to increase a resonant frequency of permeability. Also, a multi-target simultaneous sputtering is combined with the nonreactive sputtering so that in a granular structure including magnetic grains and an insulating layer a size of the magnetic grains and a thickness of the insulating layer are optimized thereby ensuring a proper magnitude for a crystalline magnetic anisotropy within the grains and excellent soft magnetic properties. Further, the optimization of the thickness of the insulating layer has the effect of improving a resistivity, decreasing an eddy current and improving an exchange interaction between the magnetic grains.

Granular magnetic thin film and method for making the same, multilayered magnetic film, magnetic components and electronic equipment

A package structure of a solid-state image sensor having a solid-state image sensor chip and a color filter stuck on a light receiving surface of the chip. The package structure includes a vessel for packaging the solid-state image sensor chip. An optically transparent protection plate is attached to the vessel to cover the light receiving surface of the chip. A resin layer is arranged between the chip and the protection plate to absorb light having a predetermined wavelength.

Package structure of solid-state image sensor

This invention includes a square wave signal generating circuitfor generating a square wave signal whose frequency changes; a MOS transistorwhich is turned on/off on the basis of the square wave signal to supply a driving current to a vibrator; and a frequency shift detecting circuitfor detecting a frequency shift between the square wave signal from the square wave generating circuit and a resonance frequency of the vibrator. The shift in the frequency generated by the square wave generating circuit is trimmed by a signal detected by the frequency shift detecting circuit.

Vibrator controlling circuit

In a conventional power circuit device, such as a power MOSFET monolithic integrated circuit device and a compound device, since five lead pins are lead out from the packaging with even intervals, sufficient separation distances between the third pin of a high voltage and other adjacent pins cannot be secured. According to this invention, the distances between the third pin and other adjacent pins are expanded so as to become wider than the distances between other pins. Furthermore, the third pin is formed into an upper position, its adjacent pins are formed into a lower position, and other pins are formed into a middle position. Thereby, sufficient separation distances between the third pin of the high voltage and other adjacent pins can be secured. Therefore, a structure favorable in terms of safety can be provided. Furthermore, by providing a full-mold packaging, the header portion is not exposed to assure an easy handling.

Power source circuit device

In a drive circuit of a half-bridge inverter circuit, a stable operation cannot be performed at a start-up time and a problem exists such that if a high side output signal is first outputted, main switching elements and are simultaneously turned on. In the present invention, a start-up circuit comprising a latch circuit and a gate circuit are provided, the latch circuit is set while prioritizing a low-side signal, and a low-side output signal is always first made high level, thereby realizing a half-bridge inverter circuit which can start up wit a stability.

Growing community of inventors

Gunma, Japan

Kenji Ikeda