Ocg Microelectronic Materials, Inc.

Arch Specialty Chemicals, Inc.

Olin Microelectronic Chemicals, Inc.

Other

Fuji Photo Film Company, Limited

Fujifilm Electronic Materials U.s.a., Inc.

Olin Microelectronics Chemicals, Inc.

Kenji Honda

Taishih Maw

Andrew J Blakeney

Alfred T Jeffries, Iii

Sobhy Tadros

Vincent G Leon

Eugene F Rothgery

Michelle Elderkin

Donald F Perry

Gale Lynne Hansen

Richard Mark Molin

Yasumasa Kawabe

Shiro Tan

Lawrence Ferreira

Rodney J Hurditch

M Lee Love, Jr

Edward A Fitzgerald

A non-corrosive cleaning composition for removing residues from a substrate. The composition comprises: (a) water; (b) at least one hydroxylammonium compound; (c) at least one basic compound, preferably selected from the group consisting of amines and quaternary ammonium hydroxides; (d) at least one organic carboxylic acid; and (e) optionally, a polyhydric compound. The pH of the composition is preferably between about 2 to about 6.

Non-corrosive cleaning composition for removing plasma etching residues

A composition for selective etching of oxides over a metal. The composition contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally, a base. The pH of the composition is about 2 to 6.

Composition for selective etching of oxides over metals

Non-corrosive stripping and cleaning composition

A method for the removing of plasma etch residues on a substrate comprising the steps of: (i) contacting the substrate with a cleaning composition, and (ii) contacting the substrate with ozonated water. The preferred cleaning composition has a pH from 2 to 6 and comprises: (A) water; (B) at least one selected hydroxylammonium compound; and (C) at least one basic compound; and optionally (D) a chelating stabilizer; and optionally (E) a surfactant.

Method for removing photoresist and plasma etch residues

Non-corrosive cleaning compositions that are aqueous based and useful for removing photoresist, plasma etch and CMP residues from a substrate. One preferred cleaning composition comprises: (i) a hydroxylamine or a hydroxylamine salt compound; (ii) at least one fluorine-containing compound; and (iii) water. Another cleaning composition comprises: (i) a compound selected from the group consisting of: an amine, a quatenary ammonium hydroxide, and ammonium hydroxide; (ii) at least one fluorine-containing compound; and (iii) water.

Cleaning composition and method for removing residues

Non-corrosive cleaning compositions that are useful for removing photoresist and/or plasma etch residues from a substrate. The cleaning composition comprises: (i) a hydroxy-(lower alkyl)-hydrazine, (ii) water, and (iii) at least one compound selected from the group consisting of a carboxylic acid, a water-miscible organic solvent and mixtures thereof.

Non-corrosive cleaning composition and method for removing photoresist

A process of treating a substrate having photoresist applied thereto, comprising the steps of:

Process for removing residues from a semiconductor substrate

Non-corrosive cleaning compositions that are aqueous based and useful for removing photoresist, plasma etch and CMP residues from a substrate. One preferred cleaning composition comprises: (i) a hydroxylamine or a hydroxylamine salt compound;(ii) at least one fluorine-containing compound; and (iii) water. Another cleaning composition comprises: (i) a compound selected from the group consisting of: an amine, a quatenary ammonium hydroxide, and ammonium hydroxide; (ii) at least one fluorine-containing compound; and (iii) water.

A non-corrosive cleaning composition for removing plasma etching residues comprising water, at least one quaternary ammonium hydroxide, and at least one corrosion inhibitor selected from (i) quaternary ammonium silicates and (ii) catechol nucleus-containing oligomers having a molecular weight in the range of about 220 to about 5,000.

The present invention is directed to an aqueous post-strip rinsing composition, comprising (1) water; (2) at least one water-soluble organic acid; and (3) at least one water-soluble surface-active agent, the rinse solution having a pH in the range from about 2.0 to about 5.0. The present invention is also directed to a method of using the above composition to remove residues from a semiconductor substrate.

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Barrington, RI, United States of America

Kenji Honda