National Institute of Advanced Industrial Science and Technology

Kenji Hirata

Morito Akiyama

Masato Uehara

Sri Ayu Anggraini

Provide are a nitride piezoelectric body having a value indicating a performance index (at least any one of d, g, and K) higher than that of aluminum nitride not doped with any element, and a MEMS device using the same. The nitride piezoelectric body is a piezoelectric body represented by chemical formula AlMgTaN, wherein X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1, and Ta includes tetravalent tantalum.

Nitride piezoelectric body and MEMS device using same

An object is to provide a piezoelectric body having a value indicating a higher performance index (d, e, C, g, and/or k) than aluminum nitride not doped with any element. The piezoelectric body is represented by a chemical formula AlMgMN where X+Y is less than 1, X is in a range of more than 0 and less than 1, and Y is in a range of more than 0 and less than 1.

There are provided a piezoelectric body of ytterbium-doped aluminum nitride, having a greater piezoelectric coefficient dor gthan those not doped with ytterbium, and a MEMS device using the piezoelectric body. The piezoelectric body is represented by a chemical formula AlYbN where a value of x is more than 0 and less than 0.37 and having a lattice constant ratio c/a in a range of 1.53 or more and less than 1.6. The piezoelectric body with such a configuration has a greater piezoelectric coefficient dor gthan those not doped with ytterbium.

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Tosu, Japan

Kenji Hirata