Seiko Epson Corporation

Konica Minolta Business Technologies, Inc.

Konica Corporation

Hitachi Metals, Ltd.

Jfe Steel Corporation

Hitachi, Ltd.

Konica Minolta, Inc.

Nissan Motor Company Limited

Olympus Optical Company, Ltd.

Murata Manufacturing Co., Ltd.

Seiko Instruments Inc

Mitsubishi Jidosha Kogyo Kabushiki Kaisha

Toppan Printing Co., Ltd.

Ushio Denki Kabushiki Kaisha

Konica-minolta Holdings, Inc.

Kenji Hayashi

Mikio Kouyama

Mikio Koyama

Hiroaki Obata

Hiroyuki Yasukawa

Ryoichi Nozawa

Ken Ohmura

Yusuke Terazawa

Natsuko Kusaka

Mikio Kohyama

Tomoe Kikuchi

Hiroshi Yamazaki

Hiroshi Nagasawa

Kazukuni Hase

Yasuhiko Muramatsu

Naohiro Hirose

Naoki Yoshie

Masafumi Uchida

Yoshiki Nishimori

Mitsuru Kuribayashi

Naoki Takayama

Masahiro Anno

Kenji Yamane

Tatsuya Nagase

Masao Yuga

Koji Yamada

Tomomi Oshiba

Koji Shibata

Tomoko Mine

Tomoko Sakimura

Kazuya Isobe

Katsuyuki Ichimiya

Saburou Hiraoka

Hajime Tadokoro

Tsuyoshi Uchida

Shigeki Kitsuya

Mikihiko Sukeno

Satoshi Matsumoto

Tatsuya Masuta

Yasuharu Saita

Hidekazu Kobayashi

Meizo Shirose

Kouji Sugama

Naoya Ikeda

Manabu Kondo

Akihiro Fukuzawa

Yukio Hosoya

Tomoe Kitani

Chiaki Yamada

Keiko Momotani

Yoshifumi Atarashi

Ryuji Kitani

Akihide Nagao

Kenji Oi

Makoto Nomiya

Kozo Shitagami

Yukiko Uno

Kazutoshi Konno

Masayuki Uchida

Takato Chiba

Yoshiaki Koizumi

Hiroyuki Yamada

Shinichi Suzuki

Hiroyuki Itoh

Katsunori Yamazaki

Hiroshi Hozoji

Shiro Hirano

Tokuro Ozawa

Shigemitsu Higuchi

Jiro Takahashi

Tadashi Yamada

Shigeru Endo

Hidetaka Ninomiya

Hiroshi Shimomura

Keisuke Fukamachi

Makoto Katagishi

Kensaku Isohata

Takemi Yonezawa

Tadashi Saito

Takashi Shiba

Hiroyuki Kozuru

Naoki Matsunaga

Manabu Wakabayashi

Kazuhiko Shimodaira

Kiyoyuki Kabuki

Tohru Sampei

Tatsuya Fujisaki

Takahiko Nojima

Kiyoshi Fukusaka

Kyoichi Yamamoto

Yusuke Obu

Daisuke Abe

Hisayuki Imamura

Norio Hosaka

Issei Nakahara

Nobuo Shikanai

Yoshiro Toda

Toshiyuki Yuzuki

Yoshihiko Noro

Provided is a near-infrared absorbing composition comprising a near-infrared absorber and a solvent, wherein the near-infrared absorber contains at least one of the following component (A) or component (B), Component (A): a component composed of a phosphonic acid compound represented by the following Formula (I), two or more kinds of phosphoric acid ester compounds or sulfonic acid ester compounds having different structures, and copper ions; and Component (B): a component composed of a copper complex obtained by a reaction of a phosphonic acid compound represented by the following Formula (I), two or more kinds of phosphoric acid ester compounds or sulfonic acid ester compounds having different structures, and a copper compound, in Formula (I), Rrepresents a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, or a fluorinated alkyl group having 1 to 20 carbon atoms.

Near-infrared-absorbing composition, near-infrared-absorbing film, and image sensor for solid-state imaging element

A buffer circuit includes a first MOSFET including a first source electrode, a first gate electrode, and a first drain electrode, and a second MOSFET, which includes a second source electrode, a second gate electrode, and a second drain electrode, and is same in polarity as the first MOSFET, and the first gate electrode and the second gate electrode are electrically connected to each other.

Buffer circuit, semiconductor integrated circuit device, oscillator, electronic apparatus, and base station

Disclosed is a near-infrared absorbing composition, including: a near-infrared absorbing agent; and a solvent, wherein the near-infrared absorbing agent includes at least one of the following Component (A) and Component (B):

Near-infrared absorbing composition, near-infrared absorbing film, and image sensor for solid-state imaging element

A planar antenna includes a planar radiation conductor, a common ground conductor, a first strip conductorlocated between the planar radiation conductorand the common ground conductorand extending in a direction in parallel to a first axis in a first right rectangular coordinate system including first, second, and third axes, a second strip conductorlocated between the planar radiation conductor and the common ground conductor and extending in a direction orthogonal to a direction of extension of the first strip conductor, and at least one pair of passive conductorstoeach including a side at an angle of 45±3° or −45±3° with respect to the first axis and opposed to the planar radiation conductor.

Planar antenna, planar array antenna, multi-axis array antenna, and wireless communication module

Provided is a near-infrared ray absorbing composition containing at least a near-infrared absorber, a metal compound, and a solvent, wherein the near-infrared absorber contains a metal ion, and the metal compound is a compound having a structure represented by the following Formula (I), Formula (II), or Formula (III),M(OR)&#x2003;&#x2003;Formula (I):M(O&#x2550;R&#x2014;O)&#x2003;&#x2003;Formula (II):(OR)M(OCOR),&#x2003;&#x2003;Formula (III):

A barrier film for electronic devices exhibiting and maintaining excellent water barrier property. The barrier film for electronic devices features a water permeability (23&#xb0; C., RH50%) that is set to be not more than 10g/m/day and a water content that is maintained to be not more than 2000 ppm.

Barrier film for electronic devices

An abrasion-resistant steel plate comprises: a chemical composition containing, in mass %, C: 0.20% to 0.45%, Si: 0.01% to 1.0%, Mn: 0.3% to 2.5%, P: 0.020% or less, S: 0.01% or less, Cr: 0.01% to 2.0%, Ti: 0.10% to 1.00%, B: 0.0001% to 0.0100%, Al: 0.1% or less, N: 0.01% or less, and a balance consisting of Fe and inevitable impurities; and a microstructure in which a volume fraction of martensite is 90% or more, and a prior austenite grain size is 80 &#x3bc;m or less, wherein a number density of TiC precipitate having a size of 0.5 &#x3bc;m or more is 400 particles/mmor more, and a Mn content [Mn] and a P content [P] in a plate thickness central segregation area satisfy 0.04[Mn]+[P]&#x3c;0.50.

Abrasion-resistant steel plate and method of producing abrasion-resistant steel plate

An abrasion-resistant steel plate comprises: a specific chemical composition; and a microstructure in which a volume fraction of martensite at a depth of 1 mm from a surface of the abrasion-resistant steel plate is 90% or more, and a prior austenite grain size in a plate thickness central part at the mid-thickness of the abrasion-resistant steel plate is 80 &#x3bc;m or less, wherein hardness at a depth of 1 mm from the surface of the abrasion-resistant steel plate is 460 to 590 HBW 10/3000 in Brinell hardness, and a concentration [Mn] of Mn in mass % and a concentration [P] of P in mass % in a plate thickness central segregation area satisfy 0.04[Mn]+[P]&#x3c;0.50.

An abrasion-resistant steel plate that can achieve both gas cutting cracking resistance and abrasion resistance at low cost is provided. An abrasion-resistant steel plate comprises: a chemical composition containing, in mass %, C: more than 0.34% and 0.50% or less, Si: 0.01% to 1.0%, Mn: 0.30% to 2.00%, P: 0.015% or less, S: 0.005% or less, Cr: 0.01% to 2.00%, Al: 0.001% to 0.100%, N: 0.01% or less, and a balance consisting of Fe and inevitable impurities; and a microstructure in which a volume fraction of martensite at a depth of 1 mm from a surface of the abrasion-resistant steel plate is 90% or more, and a prior austenite grain size at the mid-thickness of the abrasion-resistant steel plate is 80 &#x3bc;m or less, wherein hardness at a depth of 1 mm from the surface of the abrasion-resistant steel plate is 560 HBW 10/3000 or more in Brinell hardness, and a concentration [Mn] of Mn in mass % and a concentration [P] of P in mass % in a plate thickness central segregation area satisfy 0.04[Mn]+[P]&#x3c;0.45.

An abrasion-resistant steel plate comprises: a specific chemical composition; and a microstructure in which a volume fraction of martensite at a depth of 1 mm from a surface of the abrasion-resistant steel plate is 90% or more, and a prior austenite grain size at the mid-thickness of the abrasion-resistant steel plate is 80 &#x3bc;m or less, wherein hardness at a depth of 1 mm from the surface of the abrasion-resistant steel plate is 360 to 490 HBW 10/3000 in Brinell hardness, and a concentration [Mn] of Mn in mass % and a concentration [P] of P in mass % in a plate thickness central segregation area satisfy 0.04[Mn]+[P]&#x3c;0.55.

The fluorescent light source device according to this invention includes: a light-emitting device emitting blue excitation light; a wavelength conversion device excited by the excitation light and producing yellow fluorescence; and a first dichroic mirror including a region that reflects or transmits the excitation light and a region that transmits or reflects the fluorescence and partial excitation light that was not converted by the wavelength conversion device. The fluorescent light source device mixes fluorescence and partial excitation light from the wavelength conversion device together and emits white light, and further includes an auxiliary light source emitting light in a blue region identical to that of the excitation light. Radiation light from the auxiliary light source is mixed with white light that is a mixture of the fluorescence and the partial excitation light from the first dichroic mirror.

Fluorescent light source device

An oscillator includes a board having a first surface, and provided with a housing section opening on the first surface, a resonator including a resonator element and a resonator package configured to house the resonator element, a heat generator attached to the resonator, electrically connected to the resonator package, and disposed inside the housing section, and a plurality of lead terminals connected to the board, and configured to support the resonator.

Oscillator, electronic apparatus and vehicle

A multilayer ceramic substrate includes: a plurality of ceramic layersstacked together; a via holeprovided in each of the plurality of ceramic layers, the via holes of the plurality of ceramic layers being connected together in a layer stacking direction of the plurality of ceramic layers; a via wireincluding an electrical conductor filled into each of the via holes; a first conductorprovided on an upper surface of at least one of the plurality of ceramic layers, the first conductor having an annular or partially annular shape surrounding the via wire; and a second conductorincluding a first portion and a second portion, the first portion being located outside the first conductor on the upper surface of the at least one ceramic layer, the second portion overlying the first conductor, and an inner rim of the second portion being located outside an inner rim of the first conductor, wherein a thickness of the first conductoris greater than a thickness of the second conductor

Multilayer ceramic substrate and method for manufacturing same

An oscillator includes a case that has a base and a cap connected to the base; a first substrate accommodated in the case; a lead terminal electrically connected to the first substrate; and a resonator module electrically connected to the lead terminal and supported by the lead terminal with a gap with respect to the first substrate between the first substrate and the base.

Oscillator and electronic device

An object is to provide a vehicle rear seat frame wherein impact caused by a housed seat toward the vehicle front is mitigated in a case of rear-end collision. Seat cushion side frames are disposed on both ends, with respect to the vehicle lateral direction, of a seat cushion frame, and include first weak portions having less strength than other portions in the vehicle longitudinal direction in a folded state. Seat back side frames disposed on both ends, with respect to the vehicle lateral direction, of a seat back frame include second weak portions having less strength than other portions in the vehicle longitudinal direction in a folded state.

Vehicle rear seat frame and vehicle

Growing community of inventors

Tokyo, Japan

Kenji Hayashi