Panasonic Corporation

Mitsubishi Electric Corporation

Japan Display Inc.

Joled Inc.

Sumitomo Osaka Cement Co., Ltd.

Nec Corporation

Matsushita Electric Industrial Co., Ltd.

Toshiba Matsushita Display Technology Co., Ltd.

Japan Display Central Inc.

Kabushiki Kaisha Toshiba

Fuji Electric Co., Ltd.

Lintec Corporation

Magnolia White Corporation

Verisure Innovation Ab

Kenji Harada

Takayuki Takeuchi

Takahiro Komatsu

Seiji Nishiyama

Takeshi Otsuka

Satoru Ohuchi

Shinya Soneda

Shinya Fujimura

Tetsuo Morita

Hirofumi Fujita

Yoshiaki Tsukamoto

Akifumi Okigawa

Yasuyuki Kurino

Tomoaki Nakao

Takeru Yamaguchi

Yukie Hasegawa

Kenichi Urasawa

Hideyuki Takahashi

Hiroshi Tabatake

Yoichi Sato

Kei Sakanoue

Sho Yanagisawa

Kakeru Otsuka

Keiji Horikawa

Tetsuo Takahashi

Jun Yamaguchi

Takahiro Kawashima

Tohru Saitoh

Tetsuya Nitta

Masayoshi Tarutani

Yosuke Nakata

Norishige Nanai

Kazuhiko Sakutani

Munenori Ikeda

Masao Takata

Kouichi In

Hiroyuki Kimura

Hirotaka Hayashi

Shuhei Yada

Satoshi Maruyama

Masaki Nishimura

Hiroshi Kagata

Osamu Inoue

Kojiro Okuyama

Jun Hashimoto

Takanori Tsunashima

Hidenori Katsumura

Kaname Mizokami

Yumiko Amino

Masaya Terai

Masahiro Tanaka

Kazunori Komori

Yasuharu Shinokawa

Yoshitomo Ono

Takuya Sato

Kazuo Uetani

Tomomi Ito

Masanori Kurita

Nobuaki Kambe

Jun Terao

Takamitsu Fujimoto

Akira Takiguchi

Tomohiro Okuzawa

Hirofumi Oki

Akinori Sasaki

Tokio Ohto

Shinya Akao

Ken Ito

Seitaro Yamaguchi

Johan Zander

Dabide Yamaguchi

Takahiro Oonuma

Kazuhisa Yoshiki

Gon Mozumi

Akihiko Nishio

Keitaro Hoshiba

Minoru Fukushima

Dan Hovang

A dispersion liquid according to the present invention is a dispersion liquid containing metal oxide particles which have been surface-modified with a silane compound and a silicone compound, in which, when the dispersion liquid is dried by vacuum drying to separate the metal oxide particles, and a transmission spectrum of the separated metal oxide particles is measured in a wavenumber range from 800 cmto 3800 cmwith a Fourier transform infrared spectrophotometer, Formula (1) below: IA/IB≤3.5 is satisfied (in the formula, 'IA' represents a spectrum value at 3500 cmand “IB” represents a spectrum value at 1100 cm).

Dispersion liquid, composition, sealing member, light-emitting device, illumination tool, display device, and method for producing dispersion liquid

According to one embodiment, a display device including a first lower electrode, a second lower electrode, a first wiring that is disposed between the first lower electrode and the second lower electrode, a second insulation layer that is disposed on the first wiring, a first organic layer that is disposed on the first lower electrode, a second organic layer that is disposed on the second lower electrode, a first upper electrode that is disposed on the first organic layer, a second upper electrode that is disposed on the second organic layer, and a second wiring that is disposed on the second insulation layer, opposed to the first wiring, and forms a capacitance between the first wiring and the second wiring.

OLED with capacitor electrode on bank

According to one embodiment, a display device comprising a base, a first insulating layer, a first lower electrode, a second lower electrode, a first wiring, a second insulating layer disposed on the first wiring, a first organic layer disposed on the first lower electrode, a second organic layer disposed on the second lower electrode, a first separation wall disposed on the second insulating layer, and an upper wiring disposed continuously on the first organic layer, the second organic layer, and the first separation wall, wherein the upper wiring is electrically connected to the first wiring via a contact hole that penetrates the first separation wall and the second insulating layer.

Display device

Entrance and exit of a person is efficiently managed by simple authentication and registration of entrance and exit using a communication terminal carried by the person. An information processing apparatus includes a face information register that registers face information of registered users who are to enter into and exit from a place in association with the place, an information acquirer that acquires, from a communication terminal, position information of the communication terminal, face information of an applying user who applies to enter into or exit from the place, and application information for entering or exiting, a user authenticator that performs user authentication by comparing the face information of the applying user acquired from the communication terminal by the information acquirer with the face information of the registered users registered in the face information register, and an entrance and exit recorder that records, if the user authentication succeeds, that the applying user has entered into or exited from the place corresponding to the position information.

Information processing apparatus, control program of communication terminal, and entrance and exit management method

According to one embodiment, a display device includes a base, a first insulating layer, first and second lower electrodes, a second insulating layer including a first opening, a second opening, and a first trench, an organic layer including a light-emitting layer and an upper electrode, and the first trench includes a bottom surface and first and second side surfaces, an interval between the first side surface and the second side surface in an upper portion of the first trench is smaller than that in the bottom surface, and the organic layer includes a first portion covering the first lower electrode, a second portion covering the second lower electrode and a third portion disposed on the bottom surface.

According to one embodiment, a display device includes a base, a first insulating layer, a first pixel electrode on the first insulating layer in a pixel, a second pixel electrode on the first insulating layer in a dummy pixel, a second insulating layer on the first insulating layer, a first organic layer in the pixel and in contact with the first pixel electrode, a second organic layer in the dummy pixel, a partition wall on the second insulating layer and between the organic layers and a common electrode covering the organic layers and the partition wall. An end portion of the first organic layer is in contact with a side surface of the partition wall.

Display device with dummy pixel located in peripheral area

According to one embodiment, a display device includes a substrate, first and second insulating layers, first and second pixel electrodes, first and second organic layers, first and second feed lines, first and second partitions, and a common electrode including first and second parts covering the first and second organic layers. The first organic layer is between the partitions. The second feed line and the second partition are located between the organic layers. The partitions are shaped such that a width of an upper part is greater than a width of a lower part. The first part is in contact with the first feed line between the first partition and the first organic layer.

According to one embodiment, a display device includes a pixel circuit provided in each of a plurality of pixels, a plurality of flip-flop circuits provided in a shift register and a reset element provided in each of the flip-flop circuits, and the reset element is an n-channel type transistor, the pixel circuit includes a light emitting element, a light emitting power supply and a switch element, and the light emitting element is disconnected from the light emitting power supply while the light emitting power supply is rising.

A semiconductor device includes a transistor and a diode formed at a common semiconductor substrate. The diode region includes: a fifth semiconductor layer of a second conductivity type; a second semiconductor layer of the second conductivity type provided on the fifth semiconductor layer; a third semiconductor layer of a first conductivity type provided closer to a first main surface of the semiconductor substrate; a sixth semiconductor layer of the first conductivity type provided on the third semiconductor layer; and a lifetime control layer formed of a crystal defect layer reaching a deeper position than an intermediate position of the second semiconductor layer between an end of the third semiconductor layer in a thickness direction as viewed from the first main surface and an end of the fifth semiconductor layer in a thickness direction as viewed from a second main surface.

RC-IGBT with lifetime control layer

The semiconductor device according to the present application includes: a hole injection region including a hole injection layer and a semiconductor layer of a second conductivity type; a diode region including an anode layer of a second conductivity type and a cathode layer of a first conductivity type; a boundary portion semiconductor layer of a second conductivity type provided between the diode region and the hole injection region and provided on a first main surface side; a carrier injection suppression layer of a first conductivity type provided in a surface layer of the boundary portion semiconductor layer; and a semiconductor layer of a second conductivity type provided to protrude from the hole injection region on a second main surface side.

Semiconductor device

An IGBT region includes: an n-type carrier accumulation layer provided to be in contact with the n-type drift layer on the first main surface side of the n-type drift layer and having a higher n-type impurity concentration than the n-type drift layer, a p-type base layer provided between the n-type carrier accumulation layer and the first main surface, an n-type emitter layer selectively provided in a surface layer portion of the p-type base layer, and a gate electrode provided to face the n-type emitter layer and the p-type base layer with an interposition of an insulating film. A diode region includes a p-type anode layer provided between the n-type drift layer and the first main surface and provided to a position deeper from the first main surface than a boundary between the n-type carrier accumulation layer and the n-type drift layer.

Semiconductor device and method for manufacturing the same

Provided is a dispersion liquid for sealing a light-emitting element containing metal oxide particles having a refractive index of 1.7 or higher and a surface-modifying material at least partially attached to the metal oxide particles, in which a particle diameter D50 of the metal oxide particles when a cumulative percentage of a scattering intensity distribution obtained by a dynamic light scattering method is 50% is 30 nm or more and 100 nm or less, and a content of the surface-modifying material not attached to the metal oxide particles is 60% by mass or less with respect to a total content of the metal oxide particles and the surface-modifying material.

Dispersion liquid, composition, sealing member, light-emitting device, illumination tool, display device, and method for producing light-emitting device

A bootstrap circuit includes a first transistor including a gate electrode, a first and a second electrodes, a capacitor connected between the gate electrode and the second electrode, and a second transistor connected to the gate electrode. In a first period, the second transistor is turned on and the gate electrode is supplied with a first analog voltage, the first transistor is turned on, and the second electrode is supplied with a precharge voltage smaller than the first analog voltage from the first electrode. In a second period, the second transistor is turned off, the first electrode is supplied with a second analog voltage, the capacitor supplies a third analog voltage to the gate electrode in response to the first analog voltage and the second analog voltage, and the second electrode is supplied with the second analog voltage from the first electrode.

Display device having bootstrap circuit supplied with a precharge voltage

Growing community of inventors

Tokyo, Japan

Kenji Harada