Hitachi, Ltd.

Shin-Kobe Electric Machinery Co., Ltd.

Hitachi Automotive Systems, Ltd.

Hitachi Vehicle Energy, Ltd.

Hitachi Power Semiconductor Device, Ltd.

Advanced Pdp Development Center Corporation

Kenji Hara

Junichi Sakano

Shinji Shirakawa

Kenji Nakai

Mutsuhiro Mori

Katsunori Suzuki

Kensuke Hironaka

Yoshimasa Koishikawa

Takeshi Nakano

Tomohiro Iguchi

Koji Higashimoto

Hiroshi Fukunaga

Hirofumi Takahashi

Kazushige Kohno

Hiroshi Haruna

Taiga Arai

Tatsuhiko Kawasaki

Yuichi Takatsuka

Katsutoshi Kurihara

Syouji Hirahata

Youshin Yagi

Shuichi Wada

Disclosed herein is a highly reliable secondary battery with organic electrolytic solution. The secondary battery has a set of plates for the positive and negative electrodes, with a separator interposed between them, and an organic electrolytic solution composed of an organic solvent and an electrolyte dissolved therein. The organic electrolytic solution contains polyethylene glycol and bis-(3-Sulfopropyl)disulfide.

Secondary battery with organic electrolytic solution

The present invention provides a semiconductor device of a bi-directional analog switch having a high linearity and a low electric power loss. An ultrasonic diagnostic apparatus having a high degree of detection accuracy, comprising the semiconductor device, is also provided. A semiconductor device of a bi-directional analog switch, comprising a switch circuit capable of switching ON or OFF bi-directionally, and built-in driving circuits for the switch circuit, wherein the driving circuit is connected to first and second power supplies, and a first power supply voltage is higher than a maximum voltage of a signal applied to an input/output terminal of the switch circuit, a second power supply voltage is lower than a minimum voltage of a signal applied to an input/output terminal of the switch circuit, and the driving circuit comprises a Zener diode and a p-type MOSFET connected in series between the first power supply and the switch circuit.

Semiconductor device and ultrasonic diagnostic apparatus using the same

A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.

Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus

The output circuit uses an IGBT incorporating a normal latch-up operation measure and the ESD clamp circuit uses an IGBT that can more easily latch up than the output circuit device which has the latch-up prevention layer lowered in impurity density or removed.

Semiconductor device and semiconductor integrated circuit device for driving plasma display using the semiconductor device

A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.

In a manufacturing method of a SOI type high withstand voltage semiconductor device formed on a support substrate via an insulation film, a small-sized semiconductor device having small dispersion of withstand voltage is manufactured by introducing impurities into the whole surface of a p-type or n-type SOI substrate having an impurity concentration of 2E14 cmor less and serving as an active layer of the semiconductor device with an ion implantation method and thereby forming a drift layer.

Manufacturing method of semiconductor apparatus and semiconductor apparatus, power converter using the same

A non-aqueous electrolyte secondary battery that can restrict lowering of battery performance during battery preservation is provided. A negative electrode that a negative electrode mixture including graphite is applied on a rolled copper foil and a positive electrode that a positive electrode mixture including lithium manganate is applied on an aluminum foil are used. An oxide in which one element selected from Al, Si, Ti, V, Cr, Fe, Ni, Cu, Zn, Zr, Mo, W, Pb and dissimilar to elements constituting the lithium manganate is oxidized is intermixed with the lithium manganate. An intermixture amount of the oxide is set such that a molar number of the dissimilar element contained in one gram of the positive electrode active material to a molar number of lithium contained in one gram of the positive electrode active material is not more than 5/1000. Charge transfer is restricted by the oxide during battery preservation.

Positive electrode active material including a lithium transition metal complex oxide and an oxide of a dissimilar element

Using a positive electrode active material including spinel type manganese oxide as the main constituent, a novel low cost and high output power flat type nonaqueous secondary cell for HEVs that has increased safety at overcharge, and superior storage properties and cycle life is provided. A flat type nonaqueous secondary cell that has increased safety and is superior in storage and cycle properties even though the cell is a laminate type cell which does not have a blocking mechanism can be obtained by blending the spinel type lithium manganese oxide of the positive electrode and 5 wt % to 40 wt % of layered type lithium manganese oxide, to suppress storage deterioration at a high temperature and to simultaneously achieve safety when overcharged, and further, by adding a Li compound having a structure as shown in Formula (1) structure, to suppress deterioration of a mixed positive electrode active material during a high temperature cycle.

Nonaqueous secondary cell

A small-sized, low-loss load drive circuit, an integrated circuit for that drive circuit, and an inexpensive plasma display using that integrated circuit. In the load drive circuit that responds to switching commands to supply a high or low voltage to a load by switching, the source-drain voltage of an output-stage n-type MOS transistor of a flip-flop is supplied between the gate and cathode of a main IGBT. In order to hold this voltage, the power source to the flip-flop is supplied from a main power source or a charge pump power circuit connected at the fixed potential point of the main power source. In addition, a discharge prevention circuit and discharge prevention elements and are provided in order that the potential of the power source can be maintained higher than the positive potential of main power source.

Load drive circuit, integrated circuit, and plasma display

A non-aqueous electrolytic secondary battery that can prevent a drop in the power even in a large current discharge is provided. Porosity of a separator is larger than or the same as porosity of a positive electrode mixture and a porosity of a negative electrode mixture. Particularly, the porosity of the positive electrode mixture is 20% to 50%, the porosity of the negative electrode mixture is 20% to 50%, and the porosity of the separator is 20% to 60%. The separator becomes rich in the volume of the electrolytic solution that infiltrates into interfacial aperture between the separator and the negative electrode. When the large current discharge is carried out in a short time, lithium-ions are released/occluded from the electrodes and the electrolytic solution can gain the released/occluded lithium-ions with a small interfacial resistance.

Non-aqueous electrolytic solution secondary battery with electrodes having a specific thickness and porosity

A cylindrical lithium-ion battery with high safety, high capacity and high power has a winding group having a positive electrode, a negative electrode and at least one separator, and a connecting portion for connecting to respective terminals from the winding group accommodated in a battery container, and which is provided with an inner pressure-reducing mechanism for discharging gas according to an increase in inner pressure inside the battery container. The positive electrode includes a collector whose both surfaces are applied with composing material including lithium-manganese complex oxide, the thickness of the composing material on the both surfaces of the collector is at least 210 &mgr;m and the amount of the active material per one surface of the collector is at least 240 g/m . The compounding ratio of the lithium-manganese complex oxide in the composing material is preferably at least 80 wt %.

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Hitachinaka, Japan

Kenji Hara