Fuji Electric Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Other

Sumitomo Electric Industries, Limited

Sanyo Electric Co., Ltd.

Taiyo Nippon Sanso Corporation

Kenji Fukuda

Shinsuke Harada

Mitsuo Okamoto

Takashi Tsuji

Junji Senzaki

Tsutomu Yatsuo

Akimasa Kinoshita

Takashi Tsutsumi

Ryoji Kosugi

Seiji Suzuki

Tsuyoshi Araoka

Youichi Makifuchi

Kazuhiro Adachi

Hiromu Shiomi

Noriyuki Iwamuro

Kazuo Arai

Hidenori Kitai

Makoto Utsumi

Hideto Tamaso

Yasuhiko Oonishi

Yoshiyuki Sakai

Makoto Katou

Makoto Kato

Naoki Kumagai

Tsunehiro Nakajima

Naoyuki Ohse

Masanobu Iwaya

Fumikazu Imai

Takumi Fujimoto

Kishiro Abe

Masaki Miyazato

Koichi Ogiso

Yasunobu Teramoto

Kazutoshi Kojima

Mina Ryo

Yoshiyuki Sugahara

Ryouji Kosugi

Masakazu Ohi

Satoshi Kuroda

Shinichi Nakamata

Masahide Goto

Takahiro Nagano

Tsutomu Enomoto

Tatsuya Ohba

Kenichi Sakanoshita

Tetuya Miyano

One object of the present invention is to provide a gas-liquid separating device which can efficiently recover a target gas from a mixture containing at least a gas and a liquid in a gas-liquid coexistence state, and the present invention provides a gas-liquid separating device which separates and recovers a gas and a liquid from a mixture containing the gas and the liquid in a gas-liquid coexistence state, wherein the gas-liquid separating device includes an airtight space in which the mixture containing the gas and the liquid in a gas-liquid coexistence state is supplied and the mixture is stored as a mixture separated into gas and liquid, a supply path for supplying the mixture containing the gas and the liquid in a gas-liquid coexistence state into the airtight space, a gas recovery path for discharging the gas in the airtight space to the outside of the airtight space, a first decompressor which is provided in the gas recovery path and recovers the gas from the airtight space, a liquid recovery path for discharging the liquid in the airtight space to the outside of the airtight space, and a second decompressor which is provided in the liquid recovery path and configured to recover the liquid from the airtight space.

Method for producing a gas

One object of the present invention is to provide a method for producing stable isotope labeled carbon monoxide capable of controlling the abundance ratio of a specific kind of the stable oxygen isotope to be an arbitrary value, the present invention provides a method for producing stable isotope labeled carbon monoxide including: a first mixing step in which carbon monoxide selectively containing at least one kind of stable isotope selected from the group consisting ofCO,CO,CO,CO,CO, andCO, and water vapor selectively containing at least one kind of stable isotope selected form the group consisting of HO, HO and HO are mixed to produce stable isotope labeled carbon dioxide: and a second mixing step in which the stable isotope labeled carbon dioxide produced in the first mixing step and hydrogen are mixed.

Method for producing stable isotope labeled carbon monoxide and method for producing stable isotope labeled carbon dioxide

A semiconductor device includes a first JTE region formed around an active portion, a second JTE region formed around the first JTE region, and a third JTE region formed around the second JTE region. The first, second, and third JTE regions are doped with an impurity of a second conductivity type different from a first conductivity type. A concentration ratio R'(concentration of impurity in second JTE region)/(concentration of impurity in first JTE region)' and a concentration ratio R'(concentration of impurity in third JTE region)/(concentration of impurity in second JTE region)' are 0.50 or greater and 0.65 or less. A width Wof the first JTE region, a width Wof the second JTE region, and a width Wof the third JTE region are 130 &#x3bc;m or greater and 190 &#x3bc;m or less.

Schottky semiconductor device with junction termination extensions

A silicon carbide semiconductor element includes n-type silicon carbide epitaxial layers formed on an n-type silicon carbide semiconductor substrate, plural p base layers selectively formed in surfaces of the silicon carbide epitaxial layers, a p-type silicon carbide epitaxial layer formed in the silicon carbide epitaxial layer, and a trench penetrating at least the silicon carbide epitaxial layer. The silicon carbide semiconductor element also includes, in a portion of the silicon carbide epitaxial layer, a mesa portion exposing the p base layer. The silicon carbide semiconductor element further includes, between consecutive mesa side faces of the mesa portion, a flat portion substantially parallel to the silicon carbide substrate. The remaining thickness of the exposed p base layer is larger than 0.5 &#x3bc;m and smaller than 1.0 &#x3bc;m.

Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductor

In forming an ohmic electrode on a back surface of an n-type SiC substrate, an n-type semiconductor region is formed in a surface layer of the back surface of an n-type epitaxial substrate by ion implantation. In this ion implantation, the impurity concentration of the n-type semiconductor region is a predetermined range and preferably a predetermined value or less, and an n-type impurity is implanted by acceleration energy of a predetermined range such that the n-type semiconductor region has a predetermined thickness or less. Thereafter, a nickel layer and a titanium layer are sequentially formed on the surface of the n-type semiconductor region, the nickel layer is heat treated to form a silicide, and the ohmic electrode formed from nickel silicide is formed. In this manner, a back surface electrode that has favorable properties can be formed while peeling of the back surface electrode can be suppressed.

Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device

The second conductivity type thin film includes: a high-concentration layer having a first impurity concentration; a first electric field relaxing layer continuous to the high-concentration layer at an outer circumference of the high-concentration layer, the first electric field relaxing layer having a second impurity concentration lower than the first impurity concentration; a second electric field relaxing layer continuous to the first electric field relaxing layer at an outer circumference of the first electric field relaxing layer, the second electric field relaxing layer having a third impurity concentration lower than the second impurity concentration; and a first electric field diffusion layer continuous to the second electric field relaxing layer at an outer circumference of the second electric field relaxing layer, the first electric field diffusion layer having a fourth impurity concentration lower than the third impurity concentration.

Semiconductor device

The current diffusion layer is interposed between the divided portions of the first base region. The second base region is provided adjacent to both sides of the trench current diffusion layer. The body region is provided on the trench current diffusion layer and the second base region. The source region is provided on the body region. The trench is provided to extend from a surface of the source region to the trench current diffusion layer through the source region and the body region. The trench has a bottom surface that is separated from and overlaps with the center portion of the first base region in a perpendicular direction. A width of the center portion in a horizontal direction is larger than a width of the bottom surface of the trench.

Silicon carbide semiconductor device

A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate of a first conductivity type, a gate insulating film provided on a front surface of the silicon carbide semiconductor substrate and including any one or a plurality of an oxide film, a nitride film, and an oxynitride film, and a gate electrode containing poly-silicon and provided on the gate insulating film. A concentration of fluorine in the gate insulating film at an interface with the silicon carbide semiconductor substrate is equal to or higher than 1&#xd7;10atoms/cm.

A silicon carbide semiconductor device, including a silicon carbide semiconductor substrate, and an insulating film formed on a front surface of the silicon carbide semiconductor substrate. The silicon carbide semiconductor substrate has fluorine implanted therein, a concentration of which is in a range of 2&#xd7;10/cmto 4&#xd7;10/cm. A method of manufacturing the silicon carbide semiconductor device includes providing a silicon carbide semiconductor substrate, forming an oxide film on a front surface of the silicon carbide semiconductor substrate, removing a portion of the oxide film to expose the silicon carbide semiconductor substrate, implanting fluorine ions in the front surface of the silicon carbide semiconductor substrate through the removed portion of the oxide film, removing the oxide film after the fluorine ions are implanted, and forming an insulating film on the front surface of the silicon carbide semiconductor substrate after the oxide film is removed.

A method of manufacturing a silicon carbide semiconductor device includes forming on a front surface of a silicon carbide substrate of a first conductivity type, a silicon carbide layer of the first conductivity type of a lower concentration; selectively forming a region of a second conductivity type in a surface portion of the silicon carbide layer; selectively forming a source region of the first conductivity type in the region; forming a source electrode electrically connected to the source region; forming a gate insulating film on a surface of the region between the silicon carbide layer and the source region; forming a gate electrode on the gate insulating film; forming a drain electrode on a rear surface of the substrate; forming metal wiring comprising aluminum for the device, the metal wiring being connected to the source electrode; and performing low temperature nitrogen annealing after the metal wiring is formed.

Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.

A p-type region, a ptype region, and a ptype region are selectively disposed in a surface layer of a silicon carbide substrate base. The p-type region and the ptype region are disposed in a breakdown voltage structure portion that surrounds an active region. The ptype region is disposed in the active region to make up a JBS structure. The ptype region surrounds the p-type region to make up a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode overhangs an interlayer insulation film covering a portion of the p-type region and this overhanging portion acts as a field plate. The ptype region has an acceptor concentration greater than or equal to a predetermined concentration and can make a forward surge current larger.

Silicon carbide semiconductor device and fabrication method of silicon carbide semiconductor device

On a silicon carbide semiconductor substrate, heat treatment is performed after one layer or two or more layers of an oxide film, a nitride film, or an oxynitride film are formed as a gate insulating film. The heat treatment after the gate insulating film is formed is performed for a given period in an atmosphere that includes Hand HO without including O. As a result, hydrogen or hydroxyl groups can be segregated in a limited region that includes the interface of the silicon carbide substrate and the gate insulating film. The width of the region to which the hydrogen or hydroxyl groups is segregated is from 0.5 nm to 10 nm. In such a manner, the interface state density can be lowered and high channel mobility can be realized.

Silicon carbide semiconductor device and manufacturing method of silicon carbide semiconductor device

An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. The infrared ray absorbing film is composed of one of a multi-layered film of titanium nitride and titanium, a multi-layered film of molybdenum nitride and molybdenum, a multi-layered film of tungsten nitride and tungsten, or a multi-layered film of chromium nitride and chromium. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.

Silicon carbide semiconductor device and method of manufacturing a silicon carbide semiconductor device

A Ptype region, a p-type region, and a Ptype region are disposed in a surface layer of a silicon carbide substrate base and are disposed in a breakdown voltage structure portion surrounding an active region to make up an element structure of Schottky junction. The ptype region surrounds the Ptype region and the p-type region to form a junction termination structure. A Schottky electrode forms a Schottky junction with an n-type silicon carbide epitaxial layer. The Schottky electrode and an electrode pad have end portions positioned on the Ptype region and the end portion of the Schottky electrode is exposed from the end portion of the electrode pad. As a result, the region of the breakdown voltage structure portion can be made smaller while the active region can be made larger, and a semiconductor device is easily fabricated.

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Tsukuba, Japan

Kenji Fukuda