Sanyo Electric Co., Ltd.

Kenji Fukase

Kazumi Kurooka

A method for manufacturing a split gate type transistors includes the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrate, the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.

Method for manufacturing a split game type transistor

A split gate type transistor device and a method for making it. The transistor has a substrate, and a floating gate electrode is located on the substrate. A control gate electrode is provided having thick and thin film sections over the floating electrode. A source region and a drain region are formed separately in the substrate. The thin film section is formed partially over the drain region and impurity is passed into the substrate through the thin film section to form the drain region.

Semiconductor device and method for fabricating the same

Split gate type transistor made by the steps of: forming a semiconductor substrate; forming a floating gate electrode over the semiconductor substrates the floating gate electrode having at least one lateral face portion; and nitrating the at least one lateral face portion to form a nitrogen-containing layer.

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Ogaki, Japan

Kenji Fukase