Kabushiki Kaisha Toshiba

Kenji Fujimoto

Takanobu Kamakura

Katsufumi Kondo

Koichi Genei

Masanobu Iwamoto

Miwa Ishida

A semiconductor light-emitting element includes a semiconductor stacked body that includes a light emitting layer in which n well layers (where n is, for example, an integer of 1 to 10) formed of In(GaAl)As (0&#x3c;X&#x2266;0.2, 0&#x3c;y&#x3c;1), and (n+1) barrier layers formed of GaAlAs (0&#x3c;z&#x3c;1) and are alternately stacked with the well layer. The light emitting layer in some embodiments can emit light having a peak wavelength in a range of from 700 nm or more to 870 nm or less.

Semiconductor light-emitting element and optical coupling device

A light-emitting device includes a substrate that is capable of transmitting light, a conductive layer that includes a first conductive portion provided on the substrate and a second conductive portion which is provided on the substrate so as to be adjacent to the first conductive portion, The second conductive portion is thinner than the first conductive portion. A light emitting layer is provided on the first conductive portion. A first electrode is provided on the second conductive portion. A second electrode is provided on the light emitting layer. In some embodiments, a backside surface of the substrate may be processed to be optically rough so as to limit internal reflections.

Light-emitting device

According to one embodiment, a semiconductor light emitting device includes a semiconductor laminated body provided on a semiconductor substrate. The semiconductor laminated body includes a light emitting layer. The light emitting layer includes a quantum well structure made by alternately laminating n (an integer of not less than 1) well layers and (n+1) barrier layers and emits light with a peak wavelength of 650 nm to 1000 nm. Each of the well layers has a thickness of smaller than 15 nm. Each of the barrier layers has a thickness of 15 nm to 50 nm.

Semiconductor light emitting device and light coupling device

A photocoupler includes: a light emitting element; a light receiving element; and a bonding layer. The light emitting element includes a semiconductor stacked body, and a first and a second electrode. The semiconductor stacked body includes a light emitting layer. The light receiving element includes a first and a second electrode on a side of a light receiving surface. The bonding layer bonds the light emitting element and the light receiving surface, and has transparency and insulating property.

Photocoupler and semiconductor light emitting element

According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer.

Growing community of inventors

Ishikawa-ken, Japan

Kenji Fujimoto