Ihi Corporation

The University of Tokyo

Kenji Fuchigami

Takeshi Nakamura

Noboru Sato

Takeshi Momose

Masato Ishizaki

Yukihiro Shimogaki

Yasuyuki Fukushima

Yuichi Funato

Kozue Hotozuka

Hidetoshi Sugiura

Norimitsu Kameya

A plasma nitriding apparatus includes: a surface treatment unit which includes a treatment tank to house part of a treatment object inclusive of a surface treatment region, and performs a nitriding treatment on the surface treatment region inside of the treatment tank by using plasma of a treatment gas; and an outer container which receives supply of the treatment gas, and houses the treatment object and the treatment tank so that a region of the treatment object other than the part is exposed from the treatment tank.

Plasma nitriding apparatus

By using chemical vapor deposition or chemical vapor infiltration, silicon carbide is deposited on a preformaccommodated in a reaction furnacefor film formation, and the amount of additive gas added to raw material gas and carrier gas to be supplied to the reactive furnaceis used to control the growth rate and filling uniformity at film formation of silicon carbide. When the film formation of silicon carbide follows a first-order reaction, the amount of added additive gas is used to control the sticking probability of the film-forming species. When the film formation of silicon carbide follows a Langmuir-Hinshelwood rate formula, the amount of added additive gas is used to make a control so that a zero-order reaction region of the Langmuir-Hinshelwood rate formula is used.

Method for manufacturing heat-resistant composite material

Growing community of inventors

Tokyo, Japan

Kenji Fuchigami