Yoshitomi Pharmaceutical Industries, Ltd.

Kabushiki Kaisha Toshiba

Mitsubishi Pharma Corporation

Taito Company, Ltd.

Japan Tobacco Inc.

Central Glass Company, Limited

Welfide Corporation

Sakura Rubber Co., Ltd.

Kenji Chiba

Kunitomo Adachi

Tetsuro Fujita

Tadashi Mishina

Shigeo Sasaki

Kazuo Sato

Yasunobu Onishi

Minoru Moriwaki

Toshiyuki Kohara

Koji Teshima

Masatoshi Kiuchi

Takao Hayashi

Takashi Nakagawa

Shinichi Ito

Kazuhiro Watanabe

Masahiko Yoneta

Takeki Okumoto

Naoki Sugiyama

Rumiko Hayase

Tetsuya Tahara

Hirokazu Niki

Shunichi Manabe

Naohiko Oyasato

Hirotsugu Komatsu

Masanori Shindo

Takafumi Kawaguchi

Hiromitsu Wakabayashi

Takeshi Nakamura

Hiroyuki Ushio

Youichiro Naito

Makio Ohtsuki

Satoshi Tanaka

Kazuya Fukuhara

Kenji Kawano

Hirokazu Kato

Eishi Shiobara

Kei Hayasaki

Tomoyuki Takeishi

Yukio Hoshino

Michio Terasawa

Seigo Ishibuchi

Masataka Miyamura

Takehiro Kondoh

Yoichi Naka

Takeshi Ikumoto

Tsuneo Fujii

Atsushi Sakai

Yoshiyuki Hashimoto

Mariko Nagasawa

Hidekazu Aratani

Rumiko Masuda

According to an aspect of the invention, there is provided a pattern forming method including forming a lower layer organic film on a substrate, forming an upper layer resist film containing an inorganic element on the lower layer organic film, exposing a pattern on the upper layer resist film and performing development processing to form an opening in the upper layer resist film, supplying a coating forming agent to the upper layer resist film having the opening formed therein to embed and form a coating film in the opening of the upper layer resist film, thermally contracting the coating film to narrow the opening of the upper layer resist film, removing the coating film by dry etching processing and subsequently selectively removing the lower layer organic film with the upper layer resist film being used as a mask, thereby collectively processing the coating film and the lower layer organic film.

Pattern forming method and manufacturing method of semiconductor device

A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

Pattern forming method and method for manufacturing a semiconductor device

A method for evaluating a local flare in an exposure tool, includes: measuring a projection light intensity distribution by transferring a monitor mask pattern onto a semiconductor substrate; calculating a first ratio between an illumination light intensity on the monitor mask pattern and a first projection light intensity calculated based on the monitor mask pattern; calculating a distribution function of a local flare, due to a mask pattern coverage of the monitor mask pattern, based on the first ratio and the projection light intensity distribution; dividing a design mask pattern into a plurality of unit areas; calculating a second ratio between the illumination light intensity on each of the unit areas and a second projection light intensity calculated based on the design mask pattern; and calculating a local flare intensity in each of the unit areas, based on the second ratio and the distribution function.

Method for evaluating a local flare, correction method for a mask pattern, manufacturing method for a semiconductor device and a computer program product

Compounds represented by the following general formula (I) wherein ring A is benzene, cyclohexane, pyridine, piperidine, a derivative thereof, imidazole, a derivative thereof, etc.; the ring B represents benzene, cyclohexane, pyrrole or a derivative thereof, furan, thiophene, etc.; R, Rand Rrepresent each hydrogen, alkyl, halogen, hydroxyl, alkoxy, etc.; W represents hydrogen, alkyl or hydroxycarbonylalkyl; X represents halogen, cyano, nitro, etc.; X' represents hydrogen, halogen, etc.; and Y represents alkyl, hydroxyalkyl, hydroxycarbonylalkyl, aminoalkyl, etc.; salt thereof, and drugs comprising these compounds. Because of having an exellent effect of inhibiting activated lymphocyte proliferation, these compounds are usefull as preventives or remedies for various autoimmune diseases.

Fused bicyclic amide compounds and medicinal use thereof

The present invention relates to a compound of the formulawherein Ris substituted aryl, heteroaryl and the like, Rand Rare hydrogen, alkyl, halogen, hydroxyl group and the like, Q is N, CH and the like, W is hydrogen, alkyl, hydroxycarbonylalkyl and the like, X is halogen, cyano, nitro, amino and the like, X' is hydrogen, halogen, cyano, nitro, and Y is alkyl, hydroxyl group, alkoxy, mercapto and the like and a salt thereof, and a medicine containing the said compound. The compound of the present invention shows a superior inhibitory effect on activated lymphocytes proliferation and is useful as an agent for the prophylaxis or treatment of various autoimmune diseases.

Amide compounds and medicinal use thereof

There is provided a photosensitive composition suitable for a resist material. This photosensitive composition has a high sensitivity and a high resolution with respect to a light source having a short wavelength, does not cause a phase separation in a film state, and makes it possible to stably form fine resist patterns. The photosensitive composition contains a polymer obtained by protecting an alkali-soluble group of an alkali-soluble polymer by a group which is unstable with respect to an acid, a compound which generates an acid upon being irradiated with light, at least one compound which is selected from the group consisting of an imidazole compound, an alanine compound, an adenine compound, an adenosine compound, and a quaternary ammonium salt compound, and which increases miscibility in a resist film, and a phenol compound.

Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same

The methods and compositions of the invention and the compounds used in the invention involve a novel immunosuppression mechanism, accelerated lymphocyte homing immunosuppression (ALH-immunosuppression). For example, the compound FTY720 specifically directs lymphocytes to the peripheral lymph nodes, mesenteric lymph nodes, and Peyer's patches. By reversibly sequestering lymphocytes in these tissues, the compounds can inhibit an immune response in a mammal. Understanding these mechanisms provides a novel immunosuppression therapy that can synergistically interact with other immunosuppressive compounds. Screening methods for identifying similar ALH-immunosuppression compounds are also described. The invention allows better treatments and therapies wherever an immunosuppression regimen is desired.

Compositions and methods of using compositions with accelerated lymphocyte homing immunosuppressive properties

Medicinal compositions which can be processed into solutions and are useful in inhibiting rejection reactions against the transplantation of organs or bone marrow, in the maintenance immunotherapy therefor or in treating autoimmune diseases, characterized by containing 2-amino-2-&lsqb;2-(4-octylphenyl)ethyl&rsqb;propane-1,3-diol or pharmaceutically acceptable acid-addition salts thereof and cyclodextrins as a stabilizer optionally together with saccharides, if required.

Pharmaceutical composition

Benzene compound and pharmaceutical use thereof

Compositions and methods of using compositions with accelerated

2-Amino-1,3-propanediol compounds of the formula (I) ##STR1## wherein R is an optionally substituted straight- or branched carbon chain, an optionally substituted aryl, an optionally substituted cycloalkyl or the like, and R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are the same or different and each is a hydrogen, an alkyl, an aralkyl, an acyl or an alkoxycarbonyl, pharmaceutically acceptable salts thereof and immunosuppressants comprising these compounds as active ingredients. The 2-amino-1,3-propanediol compounds of the present invention show immunosuppressive action and are useful for suppressing rejection in organ or bone marrow tranplantation, prevention and treatment of autoimmune diseases or as reagents for use in medicinal and pharmaceutical fields.

2-amino-1,3-propanediol compound and immunosuppressant

A benzene compound of the formula ##STR1## wherein each symbol is as defined in the specification; an optically active isomer or salt thereof, a medicinal composition containing the same, and an immunosuppressant containing the same as the active ingredient. The compound, optically active isomer or salt has an excellent immunosuppressive effect and is useful as an inhibitor for the rejection reaction occurring in organ or bone marrow transplantation, and as a preventive or remedy for articular rheumatism, atopic eczema (dermatitis), Beh.cedilla.et's disease, uveal disease, systemic lupus erythematosus, Sjogren's syndrome, multiple sclerosis, myasthenia gravis, type I diabetes, endocrine ophthalmopathy, primary biliary, cirrhosis, Crohn's disease, glomerulonephritis, sarcoidosis, psoriasis, pemphigus, aplastic anemia, idiopathic thrombocytopenic purpura, allergy, polyarteritis nodosa, progressive systemic sclerosis, mixed connective-tissue disease, aortitis syndrome, polymyositis, dermatomyositis, Wegener's granuloma, ulcerative colitis, active chronic hepatitis, autoimmune hemolytic anemia, Evans' syndrome, bronchial asthma and pollinosis. It is useful also as an antifungal agent and hair growth stimulant.

A therapeutic agent for osteoporosis, comprising an azepine compound of the formula ##STR1## wherein each symbol is as defined in the specification, or a pharmaceutically acceptable salt thereof as an active ingredient, a method for treating osteoporosis comprising administering said compound and a use of said compound for the production of a therapeutic agent for osteoporosis. The compounds of the formula (I) have superior bone resorption-inhibitory activity and act to reduce the increased amount of calcium in blood serum, which is caused by bone resorption. Accordingly, these compounds are usable as pharmaceutical agents to effectively inhibit bone resorption, to prevent decrease of bone mass and to prevent or suppress the increase of calcium amount in blood serum which is caused by the progress of bone resorption, with regard to Paget's disease, hypercalcemia, osteoporosis and so on in which the progress of bone resorption is considered to be deeply associated with the symptom, and to the symptoms of progressing bone resorption (development into osteoporosis) along with inflammatory joint diseases such as rheumatoid arthritis.

Therapeutic agent for osteoporosis and diazepine compound

A resist composition for forming a pattern, which comprises (a) a compound represented by the following formula (1) and satisfying the following inequalities, ##STR1## wherein R.sup.1 is hydrogen atom or methyl group, R.sup.2 is a monovalent organic group, m is 0 or a positive integer, n is a positive integer, and m and n satisfying a condition of 0.03.ltoreq.n/(m+n).ltoreq.1, (b) a compound capable of generating an acid when irradiated with light, and (c) 4-phenylpyridine, wherein a weight-average molecular weight, Mw and a number-average molecular weight, Mn satisfy the following inequality, 4,000.ltoreq.Mw.ltoreq.50,000, 1.10.ltoreq.Mw/Mn.ltoreq.2.50 (Mw and Mn respectively represent value converted in styrene).

Resist composition for forming a pattern and method of forming a pattern

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Tokyo, Japan

Kenji Chiba