Tokyo Electron Limited

Kenji Amano

Tsutomu Satoyoshi

Yoshitsugu Tanaka

Hiromichi Ito

Yoshito Miyazaki

A plasma etching apparatus includes a process container formed of a container main body and an upper casing combined with each other. A detaching device is provided to move the upper casing between a mounted position where the upper casing is put on the container main body, and a retreated position where the upper casing is removed from the container main body. The detaching device supports the upper casing to be rotatable, movable up and down, and movable in a lateral direction, relative to the container main body. The retreated position is arranged such that the upper casing does not interfere with the container main body when the upper casing is rotated there.

Vacuum processing apparatus for semiconductor process

There is disclosed an inductive coupling plasma processing apparatus having a processing chamber for subjecting a substrate G to a plasma processing, a dielectric wall portion constituting an upper part wall portion or a side wall portion of the chamber, a high-frequency antenna, disposed on a corresponding portion of the dielectric wall portion outside the chamber, for forming an induction field in the chamber, a cover member formed of a dielectric material disposed inside the dielectric wall portion to cover the dielectric wall portion, a heater for heating the cover member, and an insulating member for insulating between the dielectric wall portion and the heater, wherein a reaction product generated by a plasma is heated at a temperature without adhering to the cover member, and heat generated by the heater is prevented from being conducted to the dielectric wall portion.

Inductive coupling plasma processing apparatus

An inductively-coupled-plasma-processing apparatus includes a main vessel which is partitioned into an antenna chamber and a process chamber by a partition structure. The antenna chamber includes an RF antenna and the process chamber includes a susceptor on which an LCD glass substrate is placed. The partition structure has a dielectric panel constituted of four segments supported by a cross-shaped supporting bracket. The supporting bracket is suspended from the ceiling of the main vessel by a plurality of suspenders. The supporting bracket is used as a case of a showerhead for supplying a process gas into the process chamber.

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Nirasaki, Japan

Kenji Amano