Renesas Electronics Corporation

Nec Electronics Corporation

Kenji Amada

Akira Uemura

Osamu Soma

A control method of a semiconductor device includes inspecting an electrical property of a current detection circuit in the first semiconductor chip, writing information on a correction equation obtained on the basis of an inspection result in a memory circuit of the second semiconductor chip, and correcting, with the second semiconductor chip, a detection result obtained by the current detection circuit on the basis of the information on the correction equation.

Current detection method of semiconductor device and semiconductor device

A semiconductor device includes an H-Bridge driver. The H-Bridge driver includes a first island on which a first power transistor and a second power transistor are mounted; a second island on which a third power transistor and a fourth power transistor are mounted; a third island on which a control circuit and a protection power transistor are mounted, the control circuit being configured to control the first, second, third and fourth power transistors, wherein the third island is allocated between the first island and the second island.

Semiconductor device

A semiconductor device with the highly precise current detecting function is provided. Current detection is performed using a semiconductor device in which two semiconductor chips are mounted in one package. The first semiconductor chip is provided with an electric power supply transistor to supply power to a load via a load driving terminal, and a current detection circuit to detect a current flowing through the load driving terminal. In the inspection process of the semiconductor device, the electrical property of the current detection circuit in the first semiconductor chip is inspected, and the information on a correction equation obtained as the inspection result is written in a memory circuit of the second semiconductor chip. The second semiconductor chip corrects the detection result obtained by the current detection circuit based on the information on the correction equation written in the memory circuit concerned.

A semiconductor device includes a control section, a first arm, and a second arm; and has an H-bridge circuit to supply an input current supplied from a power source to an output terminal as a reversible electric current on the basis of a control signal outputted from the control section and a reverse-connection-time backflow prevention circuit to prevent an electric current in a direction opposite to the direction of the input current from being supplied to the H-bridge circuit. The first arm is formed over a first island. The second arm is formed over a second island. The control section and the reverse-connection-time backflow prevention circuit are formed over a third island.

Semiconductor device including an H-bridge circuit for driving a motor

A multi-source MOS transistor includes a sense MOS transistor and a load MOS transistor, and is connected to a load. A current detection portion has a negative input offset voltage characteristic, and detects a first sense current in a state where it is connected to the power supply and the sense MOS transistor and a second sense current in a state where it is connected to the sense MOS transistor and the load MOS transistor. A calculation control portion calculates a load current based on the first sense current and the second sense current such that the effect of the input offset voltage in the current detection portion is cancelled.

Growing community of inventors

Kanagawa, Japan

Kenji Amada