Joled Inc.

Panasonic Corporation

Panasonic Liquid Crystal Display Co., Ltd.

Kenichirou Nishida

Arinobu Kanegae

Masahiro Ishii

Tetsuo Fukami

Toru Saito

Hisao Nagai

Yuichiro Miyamae

Yuji Kishida

Tomohiko Oda

Yui Saitou

Mitsutaka Matsumoto

Ryuuta Watanabe

An active matrix substrate includes: a signal line provided in an image display region; and a terminal provided in a frame region and electrically connected to the signal line. The terminal includes: a metal layer; a first contact layer located closer to one side in a lamination direction than the metal layer, and electrically connected to the metal layer, a first interlayer insulating layer located closer to the one side in the lamination direction than the first contact layer; and a second contact layer located closer to the one side in the lamination direction than the first interlayer insulating layer, and electrically connected to the first contact layer through a first through-hole formed in the first interlayer insulating layer. The first contact layer is made of a transparent metal oxide or a semiconductor material doped with impurities.

Active matrix substrate and liquid crystal display device

A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a substrate; forming a source electrode and a drain electrode by processing the metal film in a predetermined shape; irradiating the source electrode and the drain electrode with nitrogen plasma; exposing surfaces of a top and an end portion of the source electrode and the drain electrode with silane (SiH) gas; and forming an insulating layer comprising an oxide on the source electrode and the drain electrode.

Method of fabricating thin-film semiconductor substrate

A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.

Substrate having thin film and method of thin film formation

A method for forming the crystalline thin film according to an implementation of the present invention includes: preparing a substrate; forming a non-crystalline thin film above the substrate; and crystallizing at least a predetermined region in the non-crystalline thin film, by irradiating the non-crystalline thin film with a laser beam having a predetermined wavelength and scanned relative to the substrate. In the preparing, a direction of a largest residual stress on the substrate is identified. In the crystallizing, the laser beam is scanned in the identified direction of the largest residual stress.

Method for forming crystalline thin-film and method for manufacturing thin film transistor

A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode.

Method for fabricating thin-film semiconductor device and thin-film semiconductor device

A thin-film semiconductor device having two thin-film transistors, wherein each of the two thin-film transistors includes: a gate electrode; a gate insulating film; a semiconductor layer; a channel protection layer; an intrinsic semiconductor layer; a contact layer in contact with a portion of sides of the channel region; a source electrode on the contact layer; and a drain electrode opposite to the source electrode on the contact layer, wherein the contact layer of one of the two thin-film transistors has a conductivity type different from a conductivity type of the contact layer of the other of the two thin-film transistors.

A method for manufacturing a thin-film transistor includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode which are opposed to each other and each of which has at least a portion located above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; and performing, in a hydrogen atmosphere, plasma treatment on an altered layer which (i) is a surface layer of the protective layer exposed from the source electrode and the drain electrode and altered by the dry etching, and (ii) has at least a portion contacting a surface of the semiconductor layer.

Thin-film transistor and method for manufacturing thin-film transistor

A method for fabricating a thin-film semiconductor device according to the present disclosure includes: preparing a glass substrate; forming, above the glass substrate, an undercoat layer including a nitride film; forming a barrier layer above the undercoat layer; forming a molybdenum metal layer above the barrier layer; forming a gate electrode from the molybdenum metal layer; forming a gate insulating film above the gate electrode; forming a non-crystalline silicon layer as a non-crystalline semiconductor layer above the gate insulating film; forming a polycrystalline semiconductor layer including a polysilicon layer by annealing the non-crystalline silicon layer using a continuous-wave (CW) laser, the non-crystalline silicon layer being crystallized by the annealing; and forming a source electrode and a drain electrode above the polysilicon layer. Part of the barrier layer changes into a layer including oxygen atoms as a major component by the annealing when forming the polysilicon layer.

Thin-film semiconductor device and method for fabricating thin-film semiconductor device

A method for fabricating a thin-film semiconductor device for display according to the present disclosure includes: preparing a glass substrate; forming, above the glass substrate, an undercoat layer including a nitride film; forming a molybdenum metal layer above the undercoat layer; forming a gate electrode from the metal layer by an etching process; forming a gate insulating film above the gate electrode; forming a non-crystalline silicon layer as a non-crystalline semiconductor layer above the gate insulating film; forming a polycrystalline semiconductor layer which is a polysilicon layer by annealing the non-crystalline silicon layer at a temperature in a range from 700&#xb0; C. to 1400&#xb0; C.; forming a source electrode and a drain electrode above the polysilicon layer; and performing hydrogen plasma treatment at a stage after the metal layer is formed and before the polysilicon layer is formed, using a radio frequency power in a range from 0.098 W/cmto 0.262 W/cm.

Growing community of inventors

Hyogo, Japan

Kenichirou Nishida