Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Works, Ltd.

Panasonic Electric Works Co., Ltd.

Institute for Laser Technology

Other

Panasonic Holdings Corporation

Kenichiro Tanaka

Tetsuzo Ueda

Masahiro Ishida

Daisuke Shibata

Takanori Aketa

Masao Kubo

Hiroshi Kitano

Norio Yoshida

Hirokazu Yoshioka

Ryoji Yokotani

Ryo Kajitani

Manabu Yanagihara

Masahiro Hikita

Satoshi Tamura

Masayuki Kuroda

Saichirou Kaneko

Shinichi Kohda

Hiroto Yamagiwa

Taisuke Nishimori

Masayuki Fujita

Naohide Wakita

Tomoyuki Nakano

Kazuyuki Yamae

Minoru Maehara

Yuji Suzuki

Yoji Urano

Ayanori Ikoshi

Tetsuyuki Fukushima

Ikko Kuzuhara

Yoko Matsubayashi

Masanori Suzuki

Youji Urano

Satoshi Hyodo

Naohiro Toda

Hiroki Noguchi

Yoshiyuki Nakano

Naoko Takei

Shinji Matsui

Hiroshi Fukshima

Yutaka Iwahori

Keiji Kiba

Noriaki Miyanaga

Yoshiyuki Takegawa

Tomoaki Matsushima

Toru Hirano

Yuichi Uchida

Hiroyuki Sekii

Akifumi Nakamura

Akira Inoue

Hisayoshi Matsuo

Mikio Masui

Jun Tatsuta

Hideaki Hyuga

Akira Fukuoka

Teruhisa Yokota

Kazuyoshi Kadotani

Ichirou Tanimura

Tomonori Suzuki

Isamu Miyamoto

Takuya Nobuta

Ryoichi Terauchi

Tsuyoshi Morizumi

Nobuta Takuya

Kubo Masao

Inoue Akira

Masui Mikio

Itirou Tanimura

A light system includes a light source unit including a laser light source, and a photoelectric transducer having the ability to generate photovoltaic power. The photoelectric transducer generates the photovoltaic power when receiving power feed light emerging from the light source unit. The light source unit may cause the power feed light and light for lighting for lighting up a target space to emerge from the light source unit itself. The power feed light is to be incident on the photoelectric transducer.

Light system

A lighting system includes a light source unit and a light-distributing member. The light source unit includes a laser light source. The light-distributing member has the function of reflecting incident light that has been emitted as a beam of light from the light source unit toward a target space. The light-distributing member transforms the incident light into lighting light having a different light distribution property from the incident light and distributes the lighting light over the target space.

Lighting system

A light-emitting device includes an optical fiber, a first light source unit, and a second light source unit. The optical fiber includes a wavelength converting portion. The wavelength converting portion is provided between a light incident portion and a light emerging portion. The wavelength converting portion contains a wavelength converting material. The wavelength converting material is excited by excitation light to produce a spontaneous emission of light having a longer wavelength than the excitation light and amplifies the spontaneous emission of light to produce an amplified spontaneous emission of light. The first light source unit makes the excitation light incident on the light incident portion. The second light source unit makes seed light, causing a stimulated emission of light to be produced from the wavelength converting material that has been excited by either the excitation light or the amplified spontaneous emission of light, incident on the light incident portion.

Light-emitting device and optical fiber

A construction component forms at least a part of a structure that faces a target space. The construction component has a first function, a second function, and a third function. The first function is a function of emitting illumination light toward the target space. The second function is a function of allowing incident light to enter the construction component. The incident light is emitted from a light source disposed out of a projection area, viewed from the target space, of the construction component and is incident on the construction component via a light transmission member. The third function is a function of converting the incident light into the illumination light.

Construction component, light radiating system, and illumination system

A field effect transistor having a reduced sheet resistance is provided. A channel layer, a first spacer layer, a second spacer layer, a first electronic barrier layer, and a second electronic barrier layer are sequentially grown on the main surface of a substrate. A gate recess is created, and then an ion implanted section is formed. A third electronic barrier layer and a p-type layer are formed by a metalorganic chemical vapor deposition (MOCVD) method. The p-type layer except a portion at the gate recess is removed. B ions are implanted in the regrown third electronic barrier layer to reform the ion implanted section. A source electrode and a drain electrode are formed on the third electronic barrier layer. Then a gate electrode is formed on the p-type layer.

Field effect transistor

A nitride semiconductor device includes: a substrate having a first major surface and a second major surface; a first nitride semiconductor layer of an n-type which is disposed on the first major surface and has a protrusion; a second nitride semiconductor layer of a p-type disposed on the protrusion; a first anode electrode disposed above the first nitride semiconductor layer and the second nitride semiconductor layer; and a cathode electrode disposed under the second major surface, and a lateral surface of the protrusion is inclined by a first angle with respect to the first major surface.

Nitride semiconductor device

In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an interface with a second nitride semiconductor layer. In plan view, an electrode portion is provided between a first electrode and a second electrode with a space between the first electrode and the second electrode, and a space between the second electrode and the electrode portion is smaller than the space between the first electrode and the electrode portion. An energy barrier is provided in a junction surface between the electrode portion and the second nitride semiconductor layer, the energy barrier indicating a rectifying action in a forward direction from the electrode portion to the second nitride semiconductor layer, and a bandgap of the second nitride semiconductor layer is wider than a bandgap of the first nitride semiconductor layer.

Semiconductor device

A light source device according to an embodiment includes a solid-state light source, and an optical transmission fiber. The optical transmission fiber includes a wavelength conversion core, a light guide core, and a clad, the wavelength conversion core absorbing excitation light to generate a population inversion state of electrons and including a wavelength conversion material emitting wavelength converted light in a visible light region, the light guide core covering a periphery of the wavelength conversion core and transmitting the wavelength converted light from a first end face side to a second end face side, and the clad covering a periphery of the light guide core. In the optical transmission fiber, the wavelength converted light propagating in the light guide core generates stimulated emission, and the excitation light and the wavelength converted light amplified by the stimulated emission are emitted from the second end face.

Light source device and luminaire

A nitride semiconductor device includes: a substrate of a first conductivity type having a first surface and a second surface on a side of the substrate opposite the first surface; a first nitride semiconductor layer of the first conductivity type which is disposed on the first surface of the substrate and includes an acceptor impurity; a second nitride semiconductor layer of a second conductivity type disposed on the first nitride semiconductor layer, the second conductivity type being opposite to the first conductivity type; a first electrode disposed on the second surface of the substrate; a second electrode disposed on the first nitride semiconductor layer; and a gate electrode disposed on the second nitride semiconductor layer.

A nitride semiconductor device is provided that includes: a substrate; an n-type drift layer above the front surface of the substrate; a p-type base layer above the n-type drift layer; a gate opening in the base layer that reaches the drift layer; an n-type channel forming layer that covers the gate opening and has a channel region; a gate electrode above a section of the channel forming layer in the gate opening; an opening that is separated from the gate electrode and reaches the base layer; an opening formed in a bottom surface of said opening and reaching the drift layer; a source electrode covering the openings; and a drain electrode on the rear surface of the substrate.

A nitride semiconductor device according to the present disclosure includes a substrate; a first nitride semiconductor layer which is formed on the substrate, and which has a C-plane as a main surface; a second nitride semiconductor layer which is formed on the first nitride semiconductor layer, and which has p-type conductivity; and a first opening which is formed in the second nitride semiconductor layer, and which reaches the first nitride semiconductor layer. The nitride semiconductor device further includes a third nitride semiconductor layer which is formed so as to cover the first opening in the second nitride semiconductor layer; a first electrode which is formed on the third nitride semiconductor layer so as to include a region of the first opening; and a second electrode which is formed on the rear surface of the substrate.

An LED module includes a submount having a face in a thickness direction thereof, an LED chip bonded to the face of the submount with a first bond, and a patterned wiring circuit electrically connected to the LED chip. The first bond transmits light emitted from the LED chip. The submount is a light-transmissive member having light diffusing properties, and a planar size larger than a planar size of the LED chip. The patterned wiring circuit is provided on the face of the submount so as not to overlap the LED chip. The submount is constituted by a plurality of light-transmissive layers which are stacked in the thickness direction and have different optical properties so that a light-transmissive layer of the plurality of light-transmissive layers which is farther from the LED chip is higher in reflectance in a wavelength range of the light emitted from the LED chip.

LED module and method of preparing the LED module, lighting device

A field-effect transistor includes a codoped layer made of AlGaN (0&#x2266;x&#x2266;1) and formed on a p-type Si substrate, a GaN layer formed on the codoped layer, and an AlGaN layer formed on the GaN layer. The codoped layer contains C and Si as impurity elements. The impurity concentration of C in the codoped layer is equal to or higher than 5&#xd7;10/cm. The impurity concentration of Si in the codoped layer is lower than the impurity concentration of C. The impurity concentration of C in the GaN layer is equal to or lower than 1&#xd7;10/cm. The thickness of the GaN layer is equal to or greater than 0.75 &#x3bc;m.

Field-effect transistor

A light emitting device including multiple kinds of light emission units with different emission colors; a driver which drives the light emission units; and a cover member which is commonly provided for the multiple kinds of light emission units. The multiple kinds of light emission units include solid state light emitting elements of the same kind, and wavelength converters which cover the solid state light emitting elements, respectively, and convert wavelengths of lights emitted from the solid state light emitting elements into different wavelengths from each other. Further, the cover member contains a correction phosphor for correcting a chromaticity of light obtained by mixing lights emitted from the light emission units, to a predetermined chromaticity.

Light emitting device, and illumination apparatus and luminaire using same

Growing community of inventors

Osaka, Japan

Kenichiro Tanaka