Toshiba Memory Corporation

Kioxia Corporation

Skhynix Inc.

Kenichi Yoshino

Kazuya Sawada

Tadaaki Oikawa

Young Min Eeh

Taiga Isoda

Daisuke Watanabe

Toshihiko Nagase

Eiji Kitagawa

Youngmin Eeh

Naoki Akiyama

Hiroyuki Ohtori

Makoto Nagamine

Guk Cheon Kim

Ku Youl Jung

Jong Koo Lim

Takuya Shimano

Masatoshi Yoshikawa

Kazuhiro Tomioka

Yasuyuki Sonoda

Shuichi Tsubata

Yutaka Hashimoto

Jae-Hyoung Lee

Taichi Igarashi

Gayoung Ha

Hisanori Aikawa

Taeyoung Lee

Hyungjun Cho

Takao Ochiai

According to one embodiment, a magnetic memory device comprises a first conductor, a second conductor, a third conductor, a fourth conductor, a first layer stack, a second layer stack, and a third layer stack. The first layer stack, the second layer stack, and the third layer stack are arranged between the first conductor and the third conductor, between the first conductor and the fourth conductor, and between the second conductor and the third conductor, respectively. A height from a first portion to a first plane and a height from a second portion to the first plane are within a first range, the first portion being between the first layer stack and the third layer stack, and the second portion being between the second layer stack and the third layer stack.

Magnetic memory device and manufacturing method of magnetic memory device

According to one embodiment, a magnetic memory device includes a plurality of memory cells each including a magnetoresistance effect element and a switching element provided on a lower layer side of the magnetoresistance effect element and connected in series to the magnetoresistance effect element. The switching element includes a bottom electrode, a top electrode and a switching material layer provided between the bottom electrode and the top electrode, and the top electrode includes a first portion formed of a first material and a second portion provided on a lower layer side of the first portion and formed of a second material different from the first material.

Magnetic memory device

In general, according to one embodiment, a magnetoresistance memory device includes: a first conductor; a silicon oxide on the first conductor; a second conductor; a first layer stack on the second conductor. The silicon oxide includes a dopant and has a first part on the first conductor and a second part adjacent to the first part on the first conductor. The second part is higher than the first part. A concentration of the dopant of the second part being higher than a concentration of the dopant of the first part. The second conductor is on the second part of the silicon oxide. The first layer stack includes a first magnetic layer, a second magnetic layer, and a first insulating layer between the first magnetic layer and the second magnetic layer.

Magnetoresistance memory device and method of manufacturing magnetoresistance memory device

A magnetoresistance memory device includes a first conductor, a first insulator covering a side surface of the first conductor, a second conductor on the first conductor that are substantially made of a non-magnetic non-nitrogen material. The device includes a variable resistance material, a third conductor, a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer. The third conductor, a fourth conductor on the second ferromagnetic layer, and a second insulator covering side surfaces of the first and second ferromagnetic layers and insulating layer are substantially made of a non-nitrogen material. A third insulator is on the second insulator.

Magnetoresistance memory device and manufacturing method of magnetoresistance memory device

According to one embodiment, a magnetoresistance memory device includes: a first conductor; a variable resistance material on a top surface of the first conductor; a second conductor on a top surface of the variable resistance material; a first insulator other than nitride on a top surface of the second conductor; a magnetoresistance effect element on a top surface of the first insulator; and a third conductor located on a side surface of the first insulator and extending on a side surface of the second conductor and a side surface of the magnetoresistance effect element.

According to one embodiment, a magnetoresistive memory device includes: a first ferromagnetic layer; a stoichiometric first layer; a first insulator between the first ferromagnetic layer and the first layer; a second ferromagnetic layer between the first insulator and the first layer; and a non-stoichiometric second layer between the second ferromagnetic layer and the first layer. The second layer is in contact with the second ferromagnetic layer and the first layer.

Magnetoresistive memory device

A magnetic memory device includes a substrate; a first magnetoresistive effect element; and a second magnetoresistive effect element provided at a side of the first magnetoresistive effect element opposite to a side of the first magnetoresistive effect element at which the substrate is provided. A heat absorption rate of the first magnetoresistive effect element is lower than a heat absorption rate of the second magnetoresistive effect element.

A magnetoresistance memory device includes; first and second switching elements; first and second layer stacks respectively on the first and second switching elements; a first insulator on a side surface of the first layer stack; and a second insulator on a side surface of the second layer stack. Each of the first and second switching elements includes a variable resistance material. Each of the first and second layer stacks includes first and second ferromagnetic layers and an insulating layer between the first and second ferromagnetic layers. A narrowest interval between the first and second insulators is narrower than a narrowest interval between the first and second switching elements.

According to one embodiment, a magnetic memory device includes a substrate, a first layer stack, and a second layer stack at a same side of the first layer stack relative to the substrate, and farther than the first layer stack from the substrate. Each of the first and second layer stack includes a reference layer, a tunnel barrier layer provided in a direction relative to the reference layer, the direction being perpendicular to the substrate, a storage layer provided in the direction relative to the tunnel barrier layer, and a first nonmagnetic layer provided in the direction relative to the storage layer. A heat absorption rate of the first nonmagnetic layer of the first layer stack is lower than a heat absorption rate of the first nonmagnetic layer of the second layer stack.

According to one embodiment, a magnetic device includes a layer stack. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, a first nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, and a second nonmagnetic layer. The first ferromagnetic layer is interposed between the second nonmagnetic layer and the first nonmagnetic layer. The first nonmagnetic layer and the second nonmagnetic layer contain a magnesium oxide (MgO). The first ferromagnetic layer contains a higher amount of boron (B) at an interface with the first nonmagnetic layer than at an interface with the second nonmagnetic layer.

Magnetic device which improves write error rate while maintaining retention properties

According to one embodiment, a magnetic device includes: a first magnetic material provided above a substrate; a second magnetic material provided between the substrate and the first magnetic material; a nonmagnetic material provided between the first magnetic material and the second magnetic material; a first layer provided between the substrate and the second magnetic material and including an amorphous layer; and a second layer provided between the amorphous layer and the second magnetic material and including a crystal layer.

Magnetic device and memory device

A semiconductor device includes a first rare earth oxide layer, a first magnetic layer adjacent to the first rare earth oxide layer, a second rare earth oxide layer, a second magnetic layer adjacent to the second rare earth oxide layer, and a nonmagnetic layer. The first magnetic layer is disposed between the first rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The second magnetic layer is disposed between the second rare earth oxide layer and the nonmagnetic layer and is oriented in a crystal surface which is the same as a crystal surface of the nonmagnetic layer. The nonmagnetic layer is disposed between the first magnetic layer and the second magnetic layer.

Semiconductor device having rare earth oxide layer and method of manufacturing the same

According to one embodiment, a magnetic device includes a magnetic tunnel junction element, the magnetic tunnel junction element comprising: a first structure having ferromagnetism; a second structure having ferromagnetism; and a first nonmagnet provided between the first structure and the second structure; wherein: the first structure and the second structure are antiferromagnetically coupled via the first nonmagnet; and the first structure includes a first ferromagnetic nitride.

Magnetic device

According to one embodiment, a magnetic device includes a magnetoresistive effect element including a first ferromagnet, a conductor, and an oxide provided between the first ferromagnet and the conductor, the oxide including a first oxide of a rare-earth element and a second oxide of an element of which a covalent radius is smaller than a covalent radius of the rare-earth element.

Growing community of inventors

Seongnam-si, South Korea

Kenichi Yoshino