Yamagata University

Dis Corporation

Kenichi Yatsugi

Shizuo Tokito

Yoshinori Katayama

Daisuke Kumaki

Tomoko Okamoto

Kenjiro Fukuda

Provided is a method of manufacturing a thin film transistor satisfying the relation of L&#x3c;5 &#x3bc;m. The method includes a process of forming a streak portion by performing transfer printing on a support using a release member which is provided with an ink streak portion for forming source and drain electrodes and has mold releasability, and baking the streak portion to thereby form the source electrode constituted by a conductor and the drain electrode constituted by a conductor. In the method manufacturing a thin film transistor in which the source and drain electrodes obtained above, a semiconductor layer, an insulator layer, and a gate electrode constituted by a conductor are laminated, after the baking, in a laminated cross section of the thin film transistor to be manufactured is set to A and a channel length thereof is set to L, the ink streak portion is provided so as to satisfy the condition of L/A&#x2265;0.05.

Growing community of inventors

Sakura, Japan

Kenichi Yatsugi