Sumitomo Electric Industries, Limited

Mitsui Minings & Melting Co., Ltd.

Sumitomo Electric Hardmetal Corp.

Kenichi Watatani

Miki Miyanaga

Hideaki Awata

Koichi Sogabe

Keiji Fuse

Manabu Shiozaki

Yutaka Kobayashi

Katsuhito Yoshida

Michiko Matsukawa

Daisuke Murakami

Kenichi Kurisu

Kazuya Tokuda

Aiko Tominaga

The present invention relates to an oxide sintered material that can be used suitably as a sputtering target for forming an oxide semiconductor film using a sputtering method, a method of producing the oxide sintered material, a sputtering target including the oxide sintered material, and a method of producing a semiconductor deviceincluding an oxide semiconductor filmformed using the oxide sintered material.

Oxide sintered material, method of producing oxide sintered material, sputtering target, and method of producing semiconductor device

Provided is a semiconductor device including: a gate electrode; a channel layer arranged in a region directly below or directly above the gate electrode; a source and a drain electrodes arranged to be in contact with the channel layer; and a first insulating layer arranged between the gate electrode and the channel layer, the channel layer including a first oxide semiconductor, the source electrode and/or the drain electrode including a second oxide semiconductor, the first and second oxide semiconductors containing In, W and Zn, a content rate of W/(In+W+Zn) being higher than 0.001 atomic % and not higher than 8.0 atomic %, a content rate of Zn/(In+W+Zn) being from 1.2 atomic % to 40 atomic %, an atomic ratio of Zn to W being higher than 1.0 and lower than 20000. Also provided is a method for manufacturing the device.

Semiconductor device and method for manufacturing the same

Provided are: an oxide sintered material including an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, wherein the roundness of crystal particles composed of the ZnWOcrystal phase is 0.01 or more and less than 0.7; a method for producing the oxide sintered material; and a method for manufacturing a semiconductor device including an oxide semiconductor film that is formed by using the oxide sintered material as a sputter target.

Oxide sintered material and method for manufacturing the same, sputtering target, and method for manufacturing semiconductor device

There are provided an oxide sintered material containing an InOcrystal phase, a ZnInOcrystal phase and a ZnWOcrystal phase, and a method of producing the oxide sintered material. The method includes forming the oxide sintered material by sintering a molded body containing In, W and Zn, and forming the oxide sintered material including placing the molded body at a first constant temperature selected from a temperature range of 500&#xb0; C. or more and 1000&#xb0; C. or less for 30 minutes or longer.

Oxide sintered material and method of manufacturing the same, sputtering target, and method of manufacturing semiconductor device

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cmand equal to or lower than 7.5 g/cm, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device.

Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device

There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 &#x3bc;m and not more than 50 &#x3bc;m and having an average aspect ratio of not less than 4 and not more than 50.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cmand equal to or lower than 7.1 g/cm, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium, tungsten and zinc, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide semiconductor film is higher than 0.5 atomic % and equal to or lower than 5 atomic %, and an electric resistivity is equal to or higher than 10&#x3a9;cm. There is also provided a semiconductor device including the oxide semiconductor film.

Oxide semiconductor film including indium, tungsten and zinc and thin film transistor device

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

Oxide sintered body and semiconductor device

A sintered compact contains cubic sialon, &#x3b2;-sialon, and at least one of a first component and a second component. The first component is at least one element selected from the group consisting of iron, cobalt, nickel, and group 4 elements, group 5 elements, and group 6 elements of the periodic table. The second component is at least one compound containing at least one element selected from the group consisting of group 4 elements, group 5 elements, and group 6 elements and at least one element selected from the group consisting of carbon, nitrogen, and boron.

Sintered compact, cutting tool formed using sintered compact, and method for manufacturing sintered compact

A condensing optical system having a condensed light spot with a small size and a large focal depth without causing a problem of a decrease in intensity of the condensed light spot or discontinuity of an intensity distribution in front and rear areas of a focal position is provided. The condensing optical system that condenses a laser beam generated by a laser source at a predetermined focal length is designed to satisfy Expressions (a) to (d), thereby producing 3rd and 5th spherical aberrations:||&#x2267;0.1&#x3bb; or ||&#x2267;0.05&#x3bb;,&#x2003;&#x2003;(a)&#x2267;3 or&#x3c;1,&#x2003;&#x2003;(b)||&#x3c;1.4&#x3bb;, and&#x2003;&#x2003;(c)||&#x3c;0.5&#x3bb;,&#x2003;&#x2003;(d)where &#x3bb; is a wavelength, Zis an 8th coefficient of coefficients of the Zernike fringe polynomial of wavefront aberration corresponding to a 3rd order spherical aberration, and Zis a 15th coefficient of the coefficients of the Zernike fringe polynomial of wavefront aberration corresponding to a 5th spherical aberration.

Condensing optical system, laser processing method and apparatus, and manufacturing method of brittle material blank

Ultrashort pulse laser processing bores, welds or cuts objects (work pieces) by converging ultrashort laser pulses by a lens on the objects (work pieces) positioned at the focus and heating small spots or narrow lines on the objects (work pieces). Shortage of a focal depth of the lens prevents the ultrashort pulse laser processing from positioning the object (a work piece) and forming a deep, constant-diameter cylindrical hole. Z-parameter is defined to be Z=2fc&#x394;t/&#x394;i, where &#x394;t is a FWHM pulse width of the ultrashort pulse laser, &#x394;i is a FWHM beam diameter of the ultrashort pulse, f is a focal length of the lens and c is the light velocity in vacuum. Selection of an optical system including a diffraction-type lens which gives the Z-parameter less than 1 (Z&#x3c;1) prolongs the focal depth. Expansion of the focal depth facilitates the positioning of objects (work pieces) and enables the ultrashort pulse laser apparatus to bore a deep, constant-diameter cylindrical hole.

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Itami, Japan

Kenichi Watatani