Fujifilm Corporation

Kenichi Umeda

Yuichiro Itai

Seigo Nakamura

Atsushi Tanaka

Masayuki Suzuki

Shinichiro Sonoda

Takamichi Fujii

Tatsuya Yoshihiro

Kohei Higashi

Maki Nangu

Yukihiro Okuno

Tatsuya Shimoda

Hiroyuki Hirai

Katsuhiro Kohda

Hiroshi Sunagawa

Takami Arakawa

Hideki Yasuda

Yuki Nara

Keisuke Ushirogata

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including, as a main component, a perovskite-type oxide containing lead and an upper electrode layer. The growth control layer includes a metal oxide represented by MNO, where M is composed of one or more metal elements capable of substituting in the perovskite-type oxide, 0<d<1, and when the electronegativity is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×10, t1=0.0306, and y0=0.59958.

Piezoelectric element

A piezoelectric element includes, in sequence, a substrate, a lower electrode layer, a growth control layer, a piezoelectric layer including a perovskite-type oxide containing lead as a main component of an A site, and an upper electrode layer. The growth control layer includes a metal oxide represented by MNO, where M is one or more metal elements capable of substituting for the A site of the perovskite-type oxide. When the electronegativity of M is X, 1.41X−1.05≤d≤A1·exp(−X/t1)+y0, where A1=1.68×10, t1=0.0306, and y0=0.59958. The perovskite-type oxide is represented by (Pbα)(ZrTiβ)O, where 0.5<a1/(b1+b2+b3)<1.07.

A method of manufacturing a power generation element includes a first step of disposing a support unit that supports a vibration unit in one end portion of the vibration unit in one direction, and disposing a weight unit in the other end portion of the vibration unit in the one direction in a substrate including the vibration unit capable of vibrating, a second step of disposing a piezoelectric unit that generates power due to vibration in a portion of the vibration unit on an opposite side from the support unit side in a thickness direction of the substrate after the support unit and the weight unit are disposed in the vibration unit, and a third step of extracting a power generation element from the substrate by cutting an outer edge of the vibration unit in the thickness direction of the substrate after the piezoelectric unit is disposed in the vibration unit.

Method of manufacturing power generation element, power generation element, and power generation apparatus

The optical thin film is provided on a substrate and includes, in order, from the substrate side, an interlayer, a silver-containing metal layer, and a dielectric layer, in which an anchor region including an oxide of an anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the interlayer, a cap region including an oxide of the anchor metal is provided in an interface region of the silver-containing metal layer on a side close to the dielectric layer, a film thickness of the silver-containing metal layer is 6 nm or less, the silver-containing metal layer contains a high standard electrode potential metal, and a peak position of a concentration distribution of the high standard electrode potential metal in a film thickness direction of the silver-containing metal layer is positioned closer to the interlayer than a peak position of a silver concentration distribution.

Optical thin film having metal layer containing silver and high standard electrode potential metal

An antireflection film is provided on a substrate and includes an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, which are laminated in this order on a side of a substrate, in which the interlayer is a multilayer film having at least two layers in which a layer of high refractive index having a relatively high refractive index and a layer of lower refractive index having a relatively low refractive index are alternately laminated, the dielectric layer has a surface exposed to air, and the dielectric layer is a multilayer film including a silicon-containing oxide layer, a magnesium fluoride layer, and an adhesion layer provided between the silicon-containing oxide layer and the magnesium fluoride layer and configured to increase adhesiveness between the silicon-containing oxide layer and the magnesium fluoride layer.

Antireflection film, optical element, and optical system

In a laminated film, a resin substrate, an organic/inorganic multilayer, and a silver-containing metal layer having a thickness of 20 nm or less are laminated in this order, an anchor metal diffusion control layer having a Hamaker constant of 7.3&#xd7;10J or more is provided on the surface of the inorganic layer, an anchor region containing an oxide of an anchor metal having a surface energy which has a smaller difference with a surface energy of the silver-containing metal layer than a surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, and a cap region containing an oxide of the anchor metal is provided on a surface of the silver-containing metal layer that is opposite from a surface on a side closer to the anchor metal diffusion control layer.

Laminated film and method for producing laminated film

Provided is an antireflection film that is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer, in this order, on a substrate, in which the interlayer is a multilayer film having two or more layers, in which a layer of high refractive index having a relatively high refractive index and a layer of low refractive index having a relatively low refractive index are alternately laminated, and the dielectric layer has a surface to be exposed to air and is a multilayer film having two or more layers including an oxide layer and a fluorocarbon layer which is a self-assembled film that is formed by a silane coupling reaction to the oxide layer in this order.

Antireflection film having silver-containing layer and fluorocarbon layer, method for producing antireflection film, optical element, and optical system

An antireflection film is formed by laminating an interlayer, a silver-containing metal layer containing silver, and a dielectric layer in this order from the substrate, an anchor region including an oxide of an anchor metal is provided between the silver-containing metal layer and the interlayer, a cap region including an oxide of the anchor metal included in the anchor region is provided between the silver-containing metal layer and the dielectric layer, a crystal grain size obtained by X-ray diffraction measurement in the silver-containing metal layer is less than 6.8 nm, and the anchor metal has a surface energy less than a surface energy of silver and greater than a surface energy of a layer of the interlayer closest to the silver-containing metal layer.

Antireflection film, optical element, optical system, method of producing antireflection film

This method for producing a transparent optical film includes a film formation step of forming a silver layer and a high standard electrode potential metal layer so as to be laminated on a substrate, the film formation step including a silver deposition step of forming the silver layer, at a thickness of 6 nm or less by vacuum deposition, and a high standard electrode potential metal deposition step of forming the high standard electrode potential metal layer formed of a high standard electrode potential metal having a higher standard electrode potential than that of silver by vacuum deposition, and an alloying step of forming a silver alloy layer by diffusing the high standard electrode potential metal within the silver layer by performing a heating treatment at a temperature of 50&#xb0; C. or higher and 400&#xb0; C. or lower.

Method for producing transparent optical film and method for producing transparent multilayer film

An optical thin film formed by laminating, from the substrate side, an interlayer, a silver-containing metal layer that contains silver, and a dielectric layer, in which an anchor metal diffusion control layer provided between the interlayer and the silver-containing metal layer, an anchor region which includes an oxide of the anchor metal and has a surface energy that is less than the surface energy of the silver-containing metal layer and larger than the surface energy of the anchor metal diffusion control layer is provided between the anchor metal diffusion control layer and the silver-containing metal layer, a cap region which includes an oxide of the anchor metal is provided between the silver-containing metal layer and the dielectric layer, and the total film thickness of the silver-containing metal layer, the anchor region, and the cap region is 6 nm or less.

Optical thin film, optical element, optical system, and method for producing optical thin film

An object of the present invention is to provide an electrode material for an organic semiconductor device which maintains excellent conductivity and of which contact properties with an organic semiconductor becomes favorable. The electrode material for an organic semiconductor device of the present invention contains inorganic nanoparticles and an organic &#x3c0;-conjugated ligand, in which the organic &#x3c0;-conjugated ligand is a ligand having at least one electron-withdrawing substituent.

Electrode material for organic semiconductor device

An object of the present invention is to provide an electrode material for an organic semiconductor device with which an excellent electrode pattern can be formed, a method for forming an electrode pattern, and an organic thin-film transistor. An electrode material for an organic semiconductor device of the present invention includes inorganic nanoparticles, an organic &#x3c0;-conjugated ligand, water, 0.0005% to 15% by mass of a fluorine-based surfactant, and a surface tension adjuster of which a dielectric constant is 20 to 30, in which the organic &#x3c0;-conjugated ligand is a ligand having at least one hydrophilic substituent.

Electrode material for organic semiconductor device, method for forming electrode pattern, and organic thin-film transistor

A method for producing an amorphous oxide thin film includes: a pre-treatment process of selectively changing a binding state of an organic component, at a temperature lower than a pyrolysis temperature of the organic component, in a first oxide precursor film containing the organic component and In, to obtain a second oxide precursor film in which, when an infrared wave number range of from 1380 cmto 1520 cmin an infrared absorption spectrum obtained by performing a measurement by Fourier transform infrared spectroscopy is divided into an infrared wave number range of from 1380 cmto 1450 cmand an infrared wave number range of from more than 1450 cmto 1520 cm, a peak positioned within the infrared wave number range of from 1380 cmto 1450 cmexhibits the maximum value in the infrared absorption spectrum within an infrared wave number range of from 1350 cmto 1750 cm; and a post-treatment process of removing the organic component remaining in the second oxide precursor film, to transform the second oxide precursor film into an amorphous oxide thin film containing In.

Method for producing amorphous oxide thin film and thin film transistor

There is provided a field effect transistor having, on a substrate, at least a gate electrode, a gate insulating film, an active layer mainly containing an oxide semiconductor that contains at least one of In, Ga or Zn, a source electrode, and a drain electrode, the field effect transistor including: a heat diffusion layer, wherein, given that a thermal conductivity of the substrate is N(W/mK), a thermal conductivity of the heat diffusion layer is N(W/mK), a film thickness of the heat diffusion layer is T (mm), a planar opening ratio of the heat diffusion layer is R (0&#x2266;R&#x2266;1), and S=T&#xd7;R, the thermal conductivity Nof the substrate satisfies the condition N&#x3c;1.8, and the thermal conductivity Nof the heat diffusion layer satisfies the conditions N&#x3e;3.0&#xd7;S^(&#x2212;0.97&#xd7;e^(&#x2212;1.2&#xd7;N)) and N&#x2267;N.

Field-effect transistor

The invention provides a thin film transistor comprising an active layer, the active layer comprising an IGZO-based oxide material, the IGZO-based oxide material being represented by a composition formula of InGaZnO, where 0.75&#x3c;x&#x3c;1.10 and 0&#x3c;&#x3b4;&#x2266;1.29161&#xd7;exp(&#x2212;x/0.11802)+0.00153 and being formed from a single phase of IGZO having a crystal structure of YbFeO, and a method of producing the thin film transistor.

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Kanagawa, Japan

Kenichi Umeda