Oki Data Corporation

Oki Electric Industry Co., Ltd.

I-pex Piezo Solutions Inc.

Kenichi Tanigawa

Takahito Suzuki

Chihiro Takahashi

Shinya Jyumonji

Takuma Ishikawa

Hiroto Kawada

Toru Kosaka

Yusuke Nakai

Hironori Furuta

Yutaka Kitajima

Yuuki Shinohara

Taishi Kaneto

Hiroaki Kanamori

Eisuke Kuroki

Satoshi Tanaka

Genichiro Matsuo

Minoru Fujita

Genichirou Matsuo

Takeshi Iizuka

Akio Konishi

A semiconductor element unit includes a semiconductor element; and a first electrode having a flat first electrode mounting surface whose surface roughness is less than or equal to 10 [nm] and forming eutectic bonding with the semiconductor element in a part different from the first electrode mounting surface. A semiconductor element unit supply substrate includes one or more semiconductor element units. A semiconductor packaging circuit includes the semiconductor element unit.

Semiconductor element unit and method of manufacturing thereof, semiconductor element unit supply substrate, and semiconductor packaging circuit and method of manufacturing thereof

A composite integrated film includes a base member thin film having a base member first surface and a base member second surface facing each other, one or more penetration parts penetrating the base member first surface and the base member second surface of the base member thin film, one or more electrodes each including an electrical path part formed between the base member first surface and the base member second surface via the penetration part and an electrode surface in a planar shape formed on the base member second surface's side, and one or more elements provided on the base member first surface of the base member thin film and electrically connected to the electrodes, wherein the electrode surface and the base member second surface form a same flat surface.

Composite integrated film, composite integrated film supply wafer, and semiconductor composite device

A light-emitting thyristor includes a first semiconductor layer of a P type, a second semiconductor layer of an N type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the P type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the N type arranged adjacent to the third semiconductor layer. A part of the first semiconductor layer is an active layer adjacent to the second semiconductor layer. A dopant concentration of the active layer is higher than or equal to a dopant concentration of the third semiconductor layer. A thickness of the third semiconductor layer is thinner than a thickness of the second semiconductor layer. A dopant concentration of the second semiconductor layer is lower than the dopant concentration of the third semiconductor layer.

Light-emitting thyristor, light-emitting element chip, optical print head, and image forming device

A light-emitting thyristor includes a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type arranged adjacent to the first semiconductor layer; a third semiconductor layer of the first conductivity type arranged adjacent to the second semiconductor layer; and a fourth semiconductor layer of the second conductivity type arranged adjacent to the third semiconductor layer. The first semiconductor layer includes an active layer adjacent to the second semiconductor layer, the second semiconductor layer includes a first layer adjacent to the active layer and a second layer arranged between the first layer and the third semiconductor layer, and the first layer has a band gap wider than a band gap of the active layer and a band gap of the second layer.

Light-emitting thyristor, light-emitting element chip, optical print head, and image forming apparatus

A semiconductor light emitting apparatus includes a substrate. A plurality of first electrode wirings are formed on the surface of the substrate. At least one second electrode wiring is formed on the surface of the substrate. A light emitting section is connected between a corresponding one of the plurality of first electrode wirings and the at least one second electrode wiring. The light emitting section includes a plurality of light emitting elements.

Semiconductor light emitting apparatus, image displaying apparatus, mobile terminal, head-up display apparatus, image projector, head-mounted display apparatus, and image forming apparatus

A display module includes a light emitting element array and a lens array. The light emitting element array includes a plurality of light emitting elements arranged on a substrate and driven by driving signal to emit light. A lens array is configured to focus light emitted by the respective light emitting elements. The lens array includes a plurality of first lens pillars respectively provided on the light emitting elements, a plurality of second lens pillars respectively provided on the first lens pillars and having curved surfaces at tops thereof, and a plurality of lens portions formed so as to cover the first lens pillars and the second lens pillars, the lens portions having curved surfaces at tops thereof. A driving circuit is provided on the substrate.

Display module, manufacturing method thereof, and display device

A light-emitting device includes a substrate; a light-emitting element formed on the substrate; a seal member sealing the light-emitting element, the seal member formed of a transparent dry film resist laminated on the substrate with the light-emitting element interposed therebetween.

Light-emitting device and method of manufacturing the same

Growing community of inventors

Tokyo, Japan

Kenichi Tanigawa