Shindengen Electric Manufacturing Company Limited

Nikken Chemicals Co., Ltd.

Yamanouchi Pharmaceutical Company Ltd.

Institute of Organic Synthesis Academy of Sciences Latvian Ssr.

Kenichi Suzuki

Wataru Miyazawa

Shinji Kunori

Kazuyuki Sashida

Yasuo Hoshide

Mizue Yamaji

Kenichi Yoshida

Kousuke Ikeda

Junya Yuguchi

Takeshi Saito

Kosuke Ikeda

Masanori Hayashi

Kenichi Kubota

Haruo Watanabe

Harumitsu Imai

Hiroyuki Haga

Akira Kiue

Yoshihiko Kikuchi

Shigenobu Kadota

Tetsuro Sano

Yutaka Sekine

Haruaki Inada

Hidenori Yazawa

Yukihiro Nozaki

Toshio Matsumoto

Masaki Oshima

Yoichi Inoue

Kenichi Zenta

Tatsuo Tomioka

Hirosi Ogawa

Toshio Nakamura

Yoshio Hashimoto

Yohji Yoshida

Hirosuke Niwa

A power module according to the present invention switches an operation mode between a control mode where an ON/OFF operation of a switching element having a first electrode, a second electrode, and a third electrode is controlled, and a deterioration determination mode where the deterioration is determined based on information including &#x394;Vgs based on information including a threshold voltage detected before a stress current is supplied to the switching element and a threshold voltage detected after the stress current is supplied to the switching element. According to the power module of the present invention, the deterioration can be determined during an operation time and hence, breaking of the device can be prevented, and operation efficiency of the power module can be increased, and a manufacturing cost of the power module can be lowered.

Power module

A semiconductor switch control circuit configured to perform an ON/OFF control of a semiconductor switch and includes: a pulse signal generating part configured to generate a pulse signal; a drive current generating part configured to generate a drive current based on the pulse signal which the pulse signal generating part generates and supplies the drive current to a gate electrode of the semiconductor switch; a gate voltage detecting part configured to detect a gate voltage VGS of the semiconductor switch; and a drive current control part configured to control the drive current which the drive current generating part generates based on the pulse signal which the pulse signal generating part generates and the gate voltage VGS which the gate voltage detecting part detects.

Semiconductor switch control circuit and switching power source device

A switching element control circuit includes: a third electrode voltage control part which controls a third electrode voltage; a first electrode current detection part which detects a first electrode current which flows through the switching element; a memory part which stores information including an initial threshold voltage and an initial first electrode current, and a drain current characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at a time of operating the switching element based on information including the first electrode current, the initial threshold voltage, and an initial first electrode current, and information relating to the first electrode current characteristic of the threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

Switching element control circuit and power module

A power conversion device according to the present invention is provided with two or more sets of power modules each of which includes a switching element and a switching element control circuit having a third electrode voltage control part and a temperature detection part. The power modules PM, PMare connected in parallel to each other. The switching element control circuit includes a temperature comparison part which calculates an average operation temperature of the switching element, and compares an operation temperature of the corresponding switching element and the average operation temperature. The third electrode voltage control part controls a third electrode voltage based on information including an average operation temperature, an operation temperature of the switching element, and a threshold voltage during operation.

Plural power modules conversion device with switch element control

A semiconductor componenthas a semiconductor layerincluding a winding wire partand a winding return wire partconnected at a terminal end part of the winding wire partand returning from the terminal end part toward a starting end part side, wherein the semiconductor component is disposed so as to surround an object to be measured.

Semiconductor component, assembly and method for manufacturing semiconductor component

A switching element control circuit: a third electrode voltage control part; a temperature detection part; a first electrode current detection part; a memory part which stores information including an initial threshold voltage and an operation temperature/first electrode current characteristic of the threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the initial threshold voltage, the operation temperature of the switching element, and a first electrode current, and information relating to an operation temperature/first electrode current characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

A semiconductor device has a first electrodea second electrodeand a semiconductor layerhaving a winding wire partprovided so as to surround a current flowing between the first electrodeand the second electrodea winding return wire part, which is provided so as to surround the current, is connected to a terminal end part of the winding wire partand returns toward a starting end part side from the terminal end part, and an integration circuit configuration part connected to the winding wire partor the winding return wire part. The integration circuit configuration part has one or more of a resistance parta capacitor partand an operational amplifier part

Semiconductor device and semiconductor component

A detection substratehas a body filmhaving a through hole; a winding wire partprovided on a surface of one side of the body film, on a surface of another side of the body filmand in the through hole, and disposed so as to surround a current to be detected; and a winding return wire part, provided on the body film, connected at a terminal end part of the winding wire partand returning from the terminal end part toward a starting end part side.

Detection substrate, assembly, and method for manufacturing detection substrate

A semiconductor module includes: a semiconductor substrate; a switching element having a first electrode, a second electrode, and a gate electrode, and the switching element configured to perform turning on/off between the first electrode and the second electrode in response to applying of a predetermined gate voltage to the gate electrode; a control circuit part configured to control the gate voltage; and a current detection element configured to detect a current which flows between the first electrode and the second electrode of the switching element, wherein the switching element, the control circuit part, and the current detection element are mounted on the semiconductor substrate, and the current detection element is formed of a Rogowski coil.

Semiconductor module

A power module includes a switching element, a temperature detection part which detects an operation temperature T of the switching element, a control electrode voltage control part which controls a control electrode voltage based on a threshold voltage Vth during an operation of the switching element which is calculated based on information including the operation temperature T of the switching element detected by the temperature detection part, and a switching speed control part which controls a switching speed of the switching element based on the operation temperature T of the switching element detected by the temperature detection part.

A switching element control circuit includes a third electrode voltage control part which controls a third electrode voltage; a temperature detection part which detects an operation temperature of the switching element; a memory part which stores an initial threshold voltage, an initial temperature when the initial threshold voltage is measured, and a temperature characteristic of a threshold voltage; and a threshold voltage calculation part which calculates a threshold voltage at the time of operating the switching element based on information including the operation temperature of the switching element, the initial threshold voltage, and an initial temperature when the initial threshold voltage is measured, and information relating to a temperature characteristic of a threshold voltage, wherein the third electrode voltage control part controls the third electrode voltage based on a threshold voltage at the time of operating the switching element calculated by the threshold voltage calculation part.

An electronic device has an electronic module having an insulating substrate, a conductor layerprovided on the insulating substrate, an electronic elementprovided on the conductor layerand a heat dissipation layerprovided on the insulating substrate in an opposite side of the electronic elementand a cooling bodywhich abuts on the heat dissipation layer. The cooling bodyhas a divided partbeing provided at a portion which abuts on the heat dissipation layerand being a plurality of divided regions.

Electronic device

A switching element control circuit is configured to perform a measurement mode in which a threshold voltage of a switching element is measured and a control mode in which an ON/OFF operation of the switching element is controlled in a switching manner. The switching element control circuit includes: a threshold voltage measurement power source; a third electrode voltage control part; an ON/OFF state determination part; and a memory part which stores the third electrode voltage applied to the third electrode as a threshold voltage of the switching element. The third electrode voltage control part controls, in the control mode, the third electrode voltage based on information including the threshold voltage stored in the memory part at the time of bringing the switching element into an ON state.

An electronic module comprising a first electronic unitwhich has a first insulating substrateand a first electronic elementprovided on the first insulating substratevia a first conductor layer, a second electronic unitwhich has a second insulating substrateand a second electronic elementprovided on the second insulating substratevia a second conductor layer, a connecting bodyprovided between the first electronic unitand the second electronic unitand a coilwound around the connecting body

Electronic module

When a short-circuit failure has occurred in a power semiconductor device provided in a power module, a radical and rapid temperature increase is prevented by instantly interrupting a short-circuit current. A power modulehas a package. Provided in the packageare: a MOSFETserving as the power semiconductor device; a resistorserving as a detecting means for detecting an operation state of the MOSFETand outputting a detection signal; and a MOSFETserving as a current-interrupting purpose switch connected in series to the MOSFET. In response to a control signal Sigenerated on the basis of the detection signal, the MOSFETgoes into a conduction state during a normal operation of the MOSFETand goes into an interruption state so as to interrupt a current flowing in the MOSFETwhen a short-circuit failure has occurred in the MOSFET

Growing community of inventors

Saitama, Japan

Kenichi Suzuki